公开(公告)号：EP2777070B1

公开(公告)日：2016-07-20

申请号：EP12801637.5

申请日：2012-10-31

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： AIT-MANI, Abdenacer ,  HUET, Stéphanie

IPC分类号： H01L21/683 ,  H01L21/02

CPC分类号： H01L21/187 ,  G02B13/0085 ,  H01L21/02002 ,  H01L21/304 ,  H01L21/6835 ,  H01L25/00 ,  H01L27/14618 ,  H01L29/205 ,  H01L29/225 ,  H01L31/0203 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2777070A1

公开(公告)日：2014-09-17

申请号：EP12801637.5

申请日：2012-10-31

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： AIT-MANI, Abdenacer ,  HUET, Stéphanie

IPC分类号： H01L21/683 ,  H01L21/02

CPC分类号： H01L21/187 ,  G02B13/0085 ,  H01L21/02002 ,  H01L21/304 ,  H01L21/6835 ,  H01L25/00 ,  H01L27/14618 ,  H01L29/205 ,  H01L29/225 ,  H01L31/0203 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to a method for obtaining a heterogeneous substrate intended for use in the production of a semiconductor, comprising the following steps: (a) obtaining a first substrate (2) made from a type II-VI or type III-V material and a second substrate (1), each substrate being substantially planar and each substrate having a pre-determined surface area; (b) grinding a non-through recess (10) into the second substrate (1), the surface area of said recess being greater than the surface area of the first substrate, such that the first substrate can be housed in the recess; (c) depositing a bonding material (15) in the recess (10); (d) depositing the first substrate (2) in the recess (10) of the second substrate and securing the first substrate in the second substrate at a temperature below 300°C; and (e) levelling the first and second substrates in order to obtain a heterogeneous substrate having a substantially planar face (30).

公开(公告)号：EP2847796A1

公开(公告)日：2015-03-18

申请号：EP13721698.2

申请日：2013-05-06

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： HUET, Stéphanie ,  AIT-MANI, Abdenacer ,  DI CIOCCIO, Léa

IPC分类号： H01L27/146

CPC分类号： H01L27/1469 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/19 ,  H01L24/80 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1465 ,  H01L27/14687 ,  H01L27/14692 ,  H01L2224/03845 ,  H01L2224/04105 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/08147 ,  H01L2224/19 ,  H01L2224/221 ,  H01L2224/80201 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/12036 ,  H01L2924/12043 ,  H01L2924/351 ,  H01L2224/80001 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

摘要： The invention relates to a method for producing at least one photosensitive infrared detector by assembling a first electronic component (100, 230) comprising a plurality of photodiodes (110) sensitive to infrared radiation and a second electronic component (400) comprising at least one electronic circuit for reading the plurality of photodiodes, the method being characterised in that it comprises: the production, on each of the first (100, 230) and second (400) components, of a connection surface (192, 492) formed at least partially by a layer (210, 405) containing silicon oxide (SiO2); and a step of adhering the first component (100, 230) and the second component (400) by means of the connection surfaces (192, 492) thereof, enabling the direct adhesion the two components (100, 230, 400). This method enables the simplification of the hybridisation of heterogeneous components for the production of an infrared detector. The invention also relates to an infrared detector and to an assembly for producing such a detector.

摘要翻译： 一种用于通过组装包括对红外线辐射敏感的多个光电二极管的第一电子部件和包括至少一个用于读取多个光电二极管的电子电路的第二电子部件来生产至少一个光敏红外检测器的方法，红外检测器和用于产生 这种检测器，该方法包括：在第一和第二部件中的每一个上，至少部分地由基于氧化硅（SiO 2）的层形成的连接面; 通过其连接面接合第一部件和第二部件，从而执行两个部件的直接接合。 该方法可以简化用于产生红外检测器的异质组分的杂交。