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公开(公告)号：EP1599906B1
公开(公告)日：2019-01-16
申请号：EP04716637.6
申请日：2004-03-03
发明人： GUEDJ, Cyril , MOUSSY, Norbert
IPC分类号： H01L27/146 , H01L31/0224
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公开(公告)号：EP3151290B1
公开(公告)日：2017-11-01
申请号：EP16189323.5
申请日：2016-09-16
IPC分类号： H01L31/107
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/035272
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3.发明授权
公开(公告)号：EP2452361B1
公开(公告)日：2013-05-08
申请号：EP10728234.5
申请日：2010-07-05
发明人： GIDON, Pierre , GIFFARD, Benoit , MOUSSY, Norbert
IPC分类号： H01L27/146 , H01L31/0376
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14632 , H01L27/14636 , H01L27/14687 , H01L27/14689 , H01L27/14692 , H01L31/022408
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公开(公告)号：EP2786412A1
公开(公告)日：2014-10-08
申请号：EP12798673.5
申请日：2012-11-29
IPC分类号： H01L27/146
CPC分类号： H01L27/14649 , H01L27/14634 , H01L27/14636 , H01L27/14641 , H01L27/14647 , H01L27/1465 , H01L27/14652 , H01L27/14683 , H01L27/1469 , H04N5/32 , H04N5/378
摘要： This optical detector unit is a hybrid unit operating in a given wavelength range and comprises, superposed: a first optical detector (12) comprising detecting elements (18) formed in a semiconductor structure (20), each detecting element (18) being intended to convert a flux of incident photons into an electrical signal; and a first read circuit for reading the electrical signal from each detecting element (18). The optical detector unit (10) furthermore comprises an imaging system (14) comprising a second optical detector (28) intended to increase the operating wavelength range of the optical detector unit (10) and a second read circuit for reading electrical signals from detecting elements (18) of the second optical detector (28). The first and second read circuit are integrated together, so as to form a common read circuit (30).
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公开(公告)号：EP2636068A1
公开(公告)日：2013-09-11
申请号：EP11787702.7
申请日：2011-11-03
发明人： GIFFARD, Benoit , CAZAUX, Yvon , MOUSSY, Norbert
IPC分类号： H01L27/146 , G02B5/28
摘要： The invention relates to a radiation detection device including a silicon substrate and an infrared photodiode made of a material optimized for infrared detection. The substrate comprises a photosensitive area, readout circuits, and interconnects formed in an electrically-insulating material. The interconnects and the metal contact connect the readout circuits, the photosensitive areas, and the infrared photodiode. The detection device also comprises an infrared radiation filtering structure which covers the photosensitive area without covering the infrared photodiode.
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公开(公告)号：EP2636068B1
公开(公告)日：2020-03-11
申请号：EP11787702.7
申请日：2011-11-03
发明人： GIFFARD, Benoit , CAZAUX, Yvon , MOUSSY, Norbert
IPC分类号： H01L27/146 , G02B5/28 , H01L31/0216
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公开(公告)号：EP1774588B1
公开(公告)日：2010-07-14
申请号：EP05782045.8
申请日：2005-06-29
IPC分类号： H01L21/98 , H01L25/065 , H01L27/146
CPC分类号： H01L27/14636 , H01L24/83 , H01L27/14634 , H01L33/0079 , H01L2224/83801 , H01L2224/83894 , H01L2924/01079 , H01L2924/01087 , H01L2924/07811 , Y10T29/49126 , H01L2924/3512 , H01L2924/00
摘要： The invention relates to an assembling method for enabling localized electrical connections between areas situated on a face of a first substrate and corresponding areas situated on a face of a second substrate, said faces facing one another and at least one of the substrates having a surface topography. The method is characterized by the following steps consisting of: forming an intermediate layer comprising at least one burying layer on the face of the substrate or of the substrates having a surface topography in order to make it/them topographically compatible with the molecular bonding of these faces of the substrates to one another, the resistivity and/or thickness of the intermediate layer being chosen for enabling said localized electrical connections; placing the two faces in contact, the substrates being positioned in a manner that enables them to ensure the electrical connections between the areas situated on the first substrate and the corresponding areas situated on the second substrate, and; bonding the faces of the first and second substrate by molecular adhesion.
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公开(公告)号：EP3151290A1
公开(公告)日：2017-04-05
申请号：EP16189323.5
申请日：2016-09-16
IPC分类号： H01L31/107
CPC分类号： H01L31/107 , H01L31/022408 , H01L31/035272
摘要： L'invention concerne une photodiode SPAD (200) comportant, dans un substrat (101) d'un premier type de conductivité : une première région (103) du deuxième type de conductivité s'étendant depuis la face supérieure du substrat ; une deuxième région (105) du premier type de niveau de dopage supérieur à celui du substrat, s'étendant depuis la face inférieure de la première région (103), ayant une surface inférieure à celle de la première région (103) et étant située en regard d'une partie centrale (103a) de la première région ; une troisième région (201) du premier type de niveau de dopage supérieur à celui du substrat s'étendant depuis la face supérieure du substrat, entourant latéralement la première région (103) ; et une quatrième région (203) enterrée du premier type de niveau de dopage supérieur à celui du substrat, formant un anneau périphérique reliant la deuxième région (105) à la troisième région (201).
摘要翻译： 一种SPAD，包括在第一导电类型的衬底中：从衬底的上表面延伸的第二导电类型的第一区域; 从第一区域的下表面延伸的第一类型的第一类型的掺杂水平的第二区域的表面积小于第一区域的表面积，并且与第一区域的中心部分相对; 第一类型的第三类型比衬底从衬底的上表面延伸的更大的掺杂水平，横向围绕第一区域; 以及第一种类型的比衬底更大掺杂水平的第四掩埋区，形成将第二区连接到第三区的外围环。
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9.发明公开
公开(公告)号：EP2452361A1
公开(公告)日：2012-05-16
申请号：EP10728234.5
申请日：2010-07-05
发明人： GIDON, Pierre , GIFFARD, Benoit , MOUSSY, Norbert
IPC分类号： H01L27/146 , H01L31/0376
CPC分类号： H01L27/14647 , H01L27/14603 , H01L27/14632 , H01L27/14636 , H01L27/14687 , H01L27/14689 , H01L27/14692 , H01L31/022408
摘要： Photo-detector device (100) comprising a plurality of pixels (101a-101b), each pixel comprising an alternating stack of several photodiodes and several electrodes (112, 118a-118c) which are electrically conducting, in which: each photodiode comprises a layer of intrinsic amorphous semiconductor (114a-114c) in contact with a layer of doped amorphous semiconductor (116a-116c) which are distinct from the layers of amorphous semiconductor of the other photodiodes, each photodiode being disposed between two electrodes, and each pair of photodiodes comprising one of the electrodes disposed between these photodiodes, in each pixel, each electrode comprises an electrically conducting portion which is not overlaid on the other electrodes of the pixel and is linked electrically to an interconnection hole (124a-124d) filled with an electrically conducting material, in each pixel, portions (128a-128d) of an electrically conducting material are substantially overlaid on each of said non-overlaid electrode portions.
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