公开(公告)号：EP3671842A1

公开(公告)日：2020-06-24

申请号：EP19215884.8

申请日：2019-12-13

申请人： Commissariat à l'énergie atomique et aux énergies alternatives ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： FEUILLET, Guy ,  DAMILANO, Benjamin ,  DUBOZ, Jean-Yves ,  LARGERON, Christophe

IPC分类号： H01L27/15 ,  H01L33/20

摘要： L'invention concerne un procédé de fabrication d'au moins une structure optoélectronique sur un substrat support (100).
En particulier, la présente invention concerne la fabrication d'une structure optoélectronique (10) pourvue d'une pluralité de diodes électroluminescentes coplanaires, et formée à partir d'une succession d'empilements électroluminescents (210, 220, 230).
La présente invention met donc en œuvre une cavité, dont le fond présente un profil étagé, de sorte que la formation de la succession d'empilements électroluminescents reproduise, sur sa face exposée, le profil étagé du fond de la cavité.
L'exécution d'une étape de nivèlement de la succession d'empilements électroluminescents par rapport à un niveau de référence défini par la portion de surface exposée à l'aplomb de la marche la plus profonde, permet alors de révéler un ensemble des diodes électroluminescentes coplanaires.

公开(公告)号：EP3420125A1

公开(公告)日：2019-01-02

申请号：EP17706453.2

申请日：2017-02-21

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique

发明人： FEUILLET, Guy ,  EL KHOURY MAROUN, Michel ,  VENNEGUES, Philippe ,  ZUNIGA PEREZ, Jesus

IPC分类号： C30B25/18 ,  C30B29/40

公开(公告)号：EP3384521A1

公开(公告)日：2018-10-10

申请号：EP16805094.6

申请日：2016-11-30

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique (CNRS)

发明人： FEUILLET, Guy ,  EL KHOURY MAROUN, Michel ,  VENNEGUES, Philippe ,  ZUNIGA PEREZ, Jesus

IPC分类号： H01L21/20 ,  C30B29/40

CPC分类号： H01L21/0254 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/18 ,  H01L33/32

摘要： A subject matter of the invention relates to a method for obtaining at least one semi-polar layer (480) of nitride (N), obtained using at least one from gallium (Ga), indium (In) and aluminium (Al), on an upper surface of a crystalline layer (410) made from silicon, characterised in that said method comprises the following steps: - etching, starting from the upper surface of the crystalline layer, of a plurality of parallel grooves (460) comprising at least two opposed inclined facets (330, 331), at least one (330) of said opposed facets (330, 331) having a crystalline orientation {111}; - masking the upper surface of the crystalline layer (410) in such a way that said facets (330) have a crystalline orientation {111} that is not masked; - epitaxially growing said semi-polar nitride layer (480) from said non-masked facets (330); characterised in that said etching is carried out starting from a stack comprising the crystalline layer (410) and at least one barrier layer (420) covered by the crystalline layer (30), and in that said etching etches said crystalline layer (410) in a selective manner with respect to said barrier layer (420) in such a way that said etching stops on contact with said barrier layer (420).

公开(公告)号：EP3311394A1

公开(公告)日：2018-04-25

申请号：EP16731090.3

申请日：2016-06-16

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  Centre National de la Recherche Scientifique

发明人： EL KHOURY MAROUN, Michel ,  FEUILLET, Guy ,  VENNEGUES, Philippe ,  ZUNIGA PEREZ, Jesus

IPC分类号： H01L21/20

CPC分类号： H01L21/02647 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/30608 ,  H01L33/007

摘要： A subject of the invention relates to a method making it possible to obtain, on an upper surface of a crystalline substrate (310), a semi-polar layer (480) of nitride material comprising any one from among gallium, aluminium or indium, said method comprising the following steps: obtaining, on the upper surface of the crystalline substrate, a plurality of parallel grooves (320, 410, 420) which extend in a first direction, one of said two opposite facets (330) exhibiting a {111} crystal orientation; etching a plurality of parallel slices (450) which extend in a second direction that has undergone a rotation with respect to said first direction of the grooves (320, 410, 420) in such a way as to obtain individual facets (330') exhibiting a {111} crystal orientation; epitaxial growth of said material (480) from said individual facets (330').

公开(公告)号：EP2577719A1

公开(公告)日：2013-04-10

申请号：EP11722473.3

申请日：2011-06-01

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： BISOTTO, Isabelle ,  FEUILLET, Guy

IPC分类号： H01L21/425 ,  H01L21/477

CPC分类号： H01L21/46 ,  H01L21/425 ,  H01L21/477 ,  H01L33/0083

摘要： The invention relates to a method for purifying an n-type substrate made of ZnO and/or ZnMgO for reducing or removing the residual extrinsic impurities of the substrate with a view to p type doping at least a portion of the substrate, wherein a reactive species having a strong chemical affinity with at least one of the residual extrinsic impurities and/or capable of creating crystalline defects is introduced into at least one area of the substrate, said reactive species consisting of P, thus creating at least one so-called "getter" zone in the substrate, said zone being capable of trapping said residual extrinsic impurities and/or in which zone the residual extrinsic impurities are trapped; the substrate then annealed to diffuse the residual extrinsic impurities toward the "getter" zone, and/or out of the "getter" zone, preferably toward at least one surface of the substrate. The invention further relates to a method for preparing a substrate made of p-doped ZnO and/or ZnMgO including at least one step of purifying an n-type substrate made of ZnO and/or ZnMgO by the above purification method, wherein one or more reactive specie(s) not limited to phosphorus alone is/are employed.

公开(公告)号：EP1774589B1

公开(公告)日：2010-07-28

申请号：EP05782182.9

申请日：2005-06-29

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： MORICEAU, Hubert ,  FEUILLET, Guy ,  POCAS, Stéphane

IPC分类号： H01L21/98 ,  H01L25/065 ,  H01L21/18

CPC分类号： H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/29082 ,  H01L2224/29117 ,  H01L2224/29138 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/10329 ,  Y10T156/10 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention relates to a method for assembling, by molecular adhesion, a first substrate and a second substrate along the contact faces, the contact face of the first substrate having an electrically conductive layer on at least a portion of its surface. The inventive method comprises the following steps: depositing a connecting layer on at least a portion of the electrically conductive layer, said connecting layer being capable of ensuring a molecular adhesion with an area of the contact face of the second substrate and capable of being combined with the electrically conductive layer in order to form a conductive alloy; placing the connecting layer of the first substrate in contact with the area of the contact face of the second substrate and bonding it by molecular adhesion; transforming, on all or a portion of its width, all or part of the electrically conductive layer with all or part of the connecting layer and with at least a portion of the width of the area of the contact face over all or part of the surface of the second substrate in order to form a conductive alloy area.

公开(公告)号：EP1774588B1

公开(公告)日：2010-07-14

申请号：EP05782045.8

申请日：2005-06-29

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： FEUILLET, Guy ,  MORICEAU, Hubert ,  POCAS, Stéphane ,  JALAGUIER, Eric ,  MOUSSY, Norbert

IPC分类号： H01L21/98 ,  H01L25/065 ,  H01L27/146

CPC分类号： H01L27/14636 ,  H01L24/83 ,  H01L27/14634 ,  H01L33/0079 ,  H01L2224/83801 ,  H01L2224/83894 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/07811 ,  Y10T29/49126 ,  H01L2924/3512 ,  H01L2924/00

摘要： The invention relates to an assembling method for enabling localized electrical connections between areas situated on a face of a first substrate and corresponding areas situated on a face of a second substrate, said faces facing one another and at least one of the substrates having a surface topography. The method is characterized by the following steps consisting of: forming an intermediate layer comprising at least one burying layer on the face of the substrate or of the substrates having a surface topography in order to make it/them topographically compatible with the molecular bonding of these faces of the substrates to one another, the resistivity and/or thickness of the intermediate layer being chosen for enabling said localized electrical connections; placing the two faces in contact, the substrates being positioned in a manner that enables them to ensure the electrical connections between the areas situated on the first substrate and the corresponding areas situated on the second substrate, and; bonding the faces of the first and second substrate by molecular adhesion.