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    PROCÉDÉ DE TRANSFERT D'UNE COUCHE MINCE PAR ÉCHANGE PROTONIQUE
    1.
    发明公开
    PROCÉDÉ DE TRANSFERT D'UNE COUCHE MINCE PAR ÉCHANGE PROTONIQUE 审中-公开
    法薄膜通过质子交换进行传输

    公开(公告)号：EP2283172A1

    公开(公告)日：2011-02-16

    申请号：EP09742298.4

    申请日：2009-04-10

    申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives ,  S.O.I.TEC Silicon on Insulator Technologies S.A.

    发明人： TAUZIN, Aurélie ,  MOULET, Jean-Sébastien

    IPC分类号： C30B31/04 ,  C30B33/02

    CPC分类号： C30B31/04 ,  C30B33/02 ,  H01L21/76254

    摘要： Method for transferring a thin layer from a lithium-based starting substrate, comprising: a step of proton exchange between this substrate and a first electrolyte, which is an acid, through a free face of this substrate so as to replace lithium ions of the substrate by protons, in a proportion between 10% and 80%, over a depth e1; a step of reverse proton exchange between this substrate and a second electrolyte, through this free face, so as to replace, over a second depth e2 smaller than the first depth e1, at least practically all the protons with lithium ions, so as to leave an intermediate layer between the depths e1 and e2, in which intermediate layer protons incorporated during the proton exchange step are left, the depth e2 defining a thin layer between said free face and the intermediate layer; a heat treatment step carried out under conditions suitable for embrittling the intermediate layer; and a separating step suitable for causing the thin film to separate from the rest of the substrate at the intermediate layer.

    PROCÉDÉ DE TRANSFERT D'AU MOINS UNE COUCHE MICRO-TECHNOLOGIQUE
    2.
    发明公开
    PROCÉDÉ DE TRANSFERT D'AU MOINS UNE COUCHE MICRO-TECHNOLOGIQUE 有权
    MICRO技术转让至少一层

    公开(公告)号：EP2422365A1

    公开(公告)日：2012-02-29

    申请号：EP10725226.4

    申请日：2010-04-21

    申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    发明人： TAUZIN, Aurélie ,  STRAGIER, Anne-Sophie

    IPC分类号： H01L21/762

    CPC分类号： H01L21/76259 ,  H01L21/76254

    摘要： A microtechnology proven for transferring at least one layer comprising steps in which: a first substrate 20 is prepared comprising a porous layer 11 buried under a useful surface at a non-zero distance; a weakened region 13 is formed by ion implantation between this porous layer and this useful surface; the first substrate is bonded to a supporting substrate 30; a mechanical stress is applied to cause separation at the porous layer so as to obtain, on the one hand, a remnant of the first substrate and, on the other hand, a separated layer rigidly connected to the supporting substrate and comprising a bared surface; processing steps are carried out on the bared surface of the separated layer; the separated layer is bonded, by way of the surface to which the processing steps were applied, to a second supporting substrate ; and a heat treatment is applied to cause separation at the weakened region so as to obtain, on the one hand, a remnant of the separated layer which is rigidly connected to the second supporting substrate and, on the other hand, a remnant of this separated layer which is rigidly connected to the first supporting substrate.

    PROCÉDÉ DE FABRICATION DE STRUCTURES POUR CELLULE PHOTOVOLTAÏQUE
    4.
    发明公开
    PROCÉDÉ DE FABRICATION DE STRUCTURES POUR CELLULE PHOTOVOLTAÏQUE 审中-公开

    公开(公告)号：EP3353815A1

    公开(公告)日：2018-08-01

    申请号：EP16770757.9

    申请日：2016-09-23

    申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    发明人： TAUZIN, Aurélie

    IPC分类号： H01L31/0224 ,  H01L31/0687

    CPC分类号： H01L31/0687 ,  H01L31/02245 ,  Y02E10/544 ,  Y02P70/521

    摘要： The present invention relates to a method for manufacturing structures for a multijunction photovoltaic cell and a structure obtained by said method, the method comprising the following consecutive steps of: a) supplying a stack which includes in series: a supporting substrate (1), a multijunction structure for a photovoltaic cell (2), and a rear metal layer (4); b) forming a plurality of holes extending from the rear metal layer (4) to the surface of the photovoltaic cell (2); c) forming an electrically insulating layer (9) on the flanks of the plurality of holes; d) forming a front metal layer (8) on the electrically insulating layer; e) providing a receiving substrate (200) on which two metal tracks are arranged (6, 6'); f) electrically connecting the front metal layer (8) to the first metal track (6); g) electrically connecting the rear metal layer (4) to the second metal track (6'); h) removing the supporting substrate (1); i) forming metal studs (12) vertically adjacent to the holes and as a continuation of the front metal layer so as to partially cover a first doped layer (7) on the front surface of the multijunctions; and j) removing the exposed portions of the first doped layer (7) from the front surface so as to form doped patterns covered by the metal pads (12) formed in step i).