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32 条记录 (耗时 0.019 秒)

    Large area deposition and doping of graphene, and products including the same
    4.
    发明公开
    Large area deposition and doping of graphene, and products including the same 有权

    公开(公告)号：EP2584075A2

    公开(公告)日：2013-04-24

    申请号：EP13151839.1

    申请日：2010-07-22

    申请人： Guardian Industries Corp.

    发明人： Veerasamy, Vijayen S

    IPC分类号： C30B29/02 ,  C30B31/02 ,  C30B31/04 ,  C30B31/22

    CPC分类号： H01B1/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C30B29/02 ,  C30B31/02 ,  C30B31/04 ,  C30B31/22

    摘要： Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C 2 H 2 , CH 4 , or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

    Large area deposition and doping of graphene, and products including the same
    8.
    发明公开
    Large area deposition and doping of graphene, and products including the same 有权

    公开(公告)号：EP2584074A3

    公开(公告)日：2013-07-10

    申请号：EP13151838.3

    申请日：2010-07-22

    申请人： Guardian Industries Corp.

    发明人： Veerasamy, Vijayen S

    IPC分类号： C30B29/02 ,  C30B31/02 ,  C30B31/04 ,  C30B31/22

    CPC分类号： H01B1/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C30B29/02 ,  C30B31/02 ,  C30B31/04 ,  C30B31/22

    摘要： Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C 2 H 2 , CH 4 , or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

    Large area deposition and doping of graphene, and products including the same
    9.
    发明公开
    Large area deposition and doping of graphene, and products including the same 审中-公开
    大型捕获和杂养殖图表和产品，使掺杂

    公开(公告)号：EP2584073A3

    公开(公告)日：2013-07-10

    申请号：EP13151835.9

    申请日：2010-07-22

    申请人： Guardian Industries Corp.

    发明人： Veerasamy, Vijayen S

    IPC分类号： C30B29/02 ,  C30B31/02 ,  C30B31/04 ,  C30B31/22

    CPC分类号： H01B1/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C30B29/02 ,  C30B31/02 ,  C30B31/04 ,  C30B31/22

    摘要： Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C 2 H 2 , CH 4 , or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

    摘要翻译： 本发明的某些示例实施例涉及使用石墨烯的作为透明导电敷层（TCC）。 在实施例的某些实施例，石墨烯薄膜上生长大面积的异质外延，例如在催化剂薄膜，从烃气体（检查，例如，C 2 H 2，CH 4等）。 实施例的某些实施例的石墨烯薄膜可以掺杂或不掺杂。 在实施例的某些实施例，石墨烯薄膜，一旦形成，可关断他们的载体基板的被提升，并转移到在中间或最终产物在接收基底，E. G.，列入。 石墨烯生长，解除，并且以这种方式可以表现出低的薄层termoresistencias转印（例如，小于150欧姆/平方和下当掺杂）和高透射率值（例如，至少在可见光和红外光谱）。

    LARGE AREA DEPOSITION AND DOPING OF GRAPHENE, AND PRODUCTS INCLUDING THE SAME
    10.
    发明公开
    LARGE AREA DEPOSITION AND DOPING OF GRAPHENE, AND PRODUCTS INCLUDING THE SAME 有权
    GROSSFLÄCHIGEABSCHEIDUNG UND DOTIERUNG VON GRAPHEN SOWIE PRODUKTE DAMIT

    公开(公告)号：EP2462264A1

    公开(公告)日：2012-06-13

    申请号：EP10739729.1

    申请日：2010-07-22

    申请人： Guardian Industries Corp.

    发明人： VEERASAMY, Vijayen, S.

    IPC分类号： C30B29/02 ,  C30B31/02 ,  C30B31/04 ,  C30B31/22

    CPC分类号： H01B1/04 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/188 ,  C30B29/02 ,  C30B31/02 ,  C30B31/04 ,  C30B31/22

    摘要： Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C 2 H 2 , CH 4 , or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

    摘要翻译： 本发明的某些示例性实施方案涉及石墨烯作为透明导电涂层（TCC）的用途。 在某些示例性实施例中，在烃类气体（例如C 2 H 2，CH 4等）上在异质外延（例如在催化剂薄膜上）大面积生长的石墨烯薄膜。 某些示例性实施例的石墨烯薄膜可以是掺杂的或未掺杂的。 在某些示例性实施例中，一旦形成的石墨烯薄膜可以从它们的载体衬底上提起并转移到接收衬底，例如包含在中间体或最终产品中。 以这种方式生长，提升和转​​移的石墨烯可能表现出低的薄层电阻（例如，当掺杂时小于150欧姆/平方和较低）和高透射率值（例如，至少在可见光和红外光谱中）。