公开(公告)号：EP2200072A1

公开(公告)日：2010-06-23

申请号：EP08836871.7

申请日：2008-10-08

申请人： Covalent Materials Corporation

发明人： AOKI, Tatsuhiko ,  IZUNOME, Koji ,  ARAKI, Koji ,  INABA, Takeshi ,  YAMAGUCHI, Toshihiro ,  TABEI, Takahiro ,  HADA, Takashi ,  TANAKA, Tatsuya ,  KAWAMURA, Takafumi ,  KANEMARU, Eiichi ,  SEKIGUCHI, Masayuki

IPC分类号： H01L21/22 ,  H01L21/205 ,  H01L21/324 ,  H01L21/683

CPC分类号： H01L21/67309 ,  H01L21/68

摘要： There is provided a vertical wafer boat by which the purifying efficiency of a purifying process is improved and which has wafer support portions the length of which is increased.
A top plate 7 has an opening 7a formed using the center point of a wafer W to be mounted as its center and a slit portion 7b communicating with the opening 7 and formed to the insertion side of the wafer, the slit 7 has a width T which is 35% or more to 45% or less of the width φD of the top plate 7, further, upper surface corners 2a1 3a1, 4a1, and 5a1 are chamfered up to the position of 40% or more to 60% or less of the length of wafer support portions 2a, 3a, 4a, and 5a from the extreme ends of the wafer support portions 2a, 3a, 4a, and 5a toward direction of the support columns 2b, 3b, 4b, and 5b as well as the upper surface corners 2a2, 3a2, 4a2, and 5a2 from the position at which the chamfering is ended to the support columns 2b, 3b, 4b, and 5b is formed at an angle of 90° or less.

摘要翻译： 提供了一种垂直晶片舟，通过该垂直晶片舟，净化过程的净化效率得到改善，并且其具有长度增加的晶片支撑部分。 顶板7具有利用要安装在其中心的晶片W的中心点形成的开口7a和与开口7连通并形成在晶片的插入侧的狭缝部分7b，狭缝7具有宽度T 其为顶板7的宽度ÆD的35％以上且45％以下，此外，上表面角部2a1,3a1,4a1,5a1被倒角至40％以上至60％以下的位置 晶片支撑部分2a，3a，4a和5a从晶片支撑部分2a，3a，4a和5a的前端朝向支撑柱2b，3b，4b和5b的方向的长度以及上部 从倒角结束的位置到支撑柱2b，3b，4b和5b的表面角2a2,3a2,4a2和5a2以90°或更小的角度形成。