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15 条记录 (耗时 0.012 秒)

    PLANAR HEATER
    1.
    发明公开
    PLANAR HEATER 审中-公开
    平面HEIZVORRICHTUNG

    公开(公告)号：EP1988750A1

    公开(公告)日：2008-11-05

    申请号：EP07708125.5

    申请日：2007-02-07

    申请人： Covalent Materials Corporation ,  Tokyo Electron Ltd.

    发明人： SHIBATA, Kazuo ,  KAWASAKI, Hiroo ,  IWATA, Teruo ,  AMIKURA, Manabu

    IPC分类号： H05B3/86 ,  H05B3/14 ,  H05B3/74

    CPC分类号： H05B3/145 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/283 ,  H05B2203/002 ,  H05B2203/003 ,  H05B2203/014 ,  H05B2203/016 ,  H05B2203/037

    摘要： [Problem to Be Solved]
    To provide a plane heater including a carbon wire heating element which has an arrangement pattern allowing a heating surface to be a substantially uniform heating temperature plane.
    [Means to Solve Problem]
    Surface arrangement densities of a carbon wire heating element CW are different in an inner area and an outer area located in the periphery. The surface arrangement density in the above-mentioned outer area is denser than the surface arrangement density in the inner area. A power supply terminal unit 8 having connection wires for supplying electricity to the above-mentioned heating element CW is arranged in the center on the back side of the above-mentioned silica glass plate-like member 2. The connection wires 4a and 4b connected with the carbon wire heating element in the above-mentioned inner area are connected with the carbon wire heating element CW in the inner area in the center of the above-mentioned silica glass plate-like member. The connection wires 3a and 3b connected with the carbon wire heating element in the above-mentioned outer area are extended from the center of the above-mentioned silica glass plate-like member toward the outer area, and are connected with the carbon wire heating element CW in the outer area, without intersecting the carbon wire heating element CW in the above-mentioned inner area.

    摘要翻译： [待解决的问题]提供一种包括碳线加热元件的平面加热器，该加热元件具有允许加热表面为基本均匀的加热温度平面的布置图案。 解决问题的手段碳丝加热元件CW的表面排列密度在内部区域和位于周边的外部区域不同。 上述外部区域中的表面排列密度比内部区域中的表面排列密度更致密。 具有用于向上述加热元件CW供电的连接线的电源端子单元8布置在上述石英玻璃板状构件2的背面的中心。连接线4a和4b与 上述内部区域中的碳线加热元件与碳丝加热元件CW连接在上述石英玻璃板状构件的中心的内部区域。 与上述外部区域中的碳丝加热元件连接的连接线3a和3b从上述石英玻璃板状构件的中心向外部区域延伸，并与碳线加热元件 CW在外部区域中，而不与上述内部区域中的碳线加热元件CW相交。

    Porous body and producing method thereof
    2.
    发明公开
    Porous body and producing method thereof 审中-公开
    PoröserKörperund Herstellungsverfahrendafür

    公开(公告)号：EP1842839A1

    公开(公告)日：2007-10-10

    申请号：EP07007116.2

    申请日：2007-04-04

    申请人： Covalent Materials Corporation

    发明人： Kitagawa, Fumihiko ,  Imaizumi, Takafumi

    IPC分类号： C04B38/00

    CPC分类号： C04B38/10 ,  Y02W30/92 ,  C04B38/08 ,  C04B40/0078 ,  C04B40/0089 ,  C04B40/0268 ,  C04B2103/408 ,  C04B14/24 ,  C04B20/008 ,  C04B18/082 ,  C04B35/00 ,  C04B38/0051 ,  C04B38/0054 ,  C04B38/0058 ,  C04B38/0061 ,  C04B38/0074

    摘要： According to a producing method including; preparing a foaming slurry by agitating and blending a dispersion medium containing hollow glass or ceramic particles having an average particle diameter of 1 µm or more, a dispersant and a foaming agent to foam; obtaining a dried body by dropping the foaming slurry in liquid nitrogen, followed by freeze drying in a vacuum; and sintering the dried body to obtain a spherical porous body having open pores interconnected over an entirety, a porous body that is highly communicative, has sufficient mechanical strength and is suitable as a cell culture carrier for microcarrier culture can be provided.

    摘要翻译： 根据生产方法，包括： 通过将含有中空玻璃或平均粒径为1μm以上的陶瓷颗粒的分散介质，分散剂和发泡剂搅拌并混合来制备发泡浆料以发泡; 通过在液氮中滴加发泡浆料，然后在真空中冷冻干燥获得干燥体; 并且烧结干燥体以获得具有全部互连的开放孔的球形多孔体，可以提供高度连通性，具有足够的机械强度并且适合作为微载体培养的细胞培养载体的多孔体。

    Nitride semiconductor substrate
    3.
    发明公开
    Nitride semiconductor substrate 审中-公开
    Nitrid-Halbleitersubstrat

    公开(公告)号：EP2797108A1

    公开(公告)日：2014-10-29

    申请号：EP14165376.6

    申请日：2014-04-22

    申请人： Covalent Materials Corporation

    发明人： Komiyama, Jun ,  Eriguchi, Kenichi ,  Yoshida, Akira ,  Oishi, Hiroshi ,  Abe, Yoshihisa ,  Suzuki, Shunichi

    IPC分类号： H01L21/20

    CPC分类号： H01L29/2003 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/045 ,  H01L29/7786

    摘要： A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a Si substrate when forming a thick nitride semiconductor layer on the substrate. A nitride semiconductor substrate 1 is prepared in such a manner that a buffer layer 3 and a semiconductor active layer 4 each comprising a group 13 nitride are stacked one by one on one principal plane of a Si single crystal substrate, the one principal plane has an offset angle of 0.1° to 1° or -1° to -0.1° with respect to a (111) plane, an average dopant concentration in a bulk is 1×10 18 to 1×10 21 cm -3 , the Si single crystal substrate 2 has a SiO 2 film on the back, and the total thickness of the buffer layer 3 and the semiconductor active layer 4 is 4 to 10 µm.

    摘要翻译： 提供一种氮化物半导体衬底，其适用于高耐压功率器件，并且在衬底上形成厚的氮化物半导体层时，可防止在Si衬底中产生翘曲和裂纹。 以这样的方式制备氮化物半导体衬底1，即，在Si单晶衬底的一个主平面上逐层堆叠各自包含13族氮化物的缓冲层3和半导体活性层4，一个主平面具有 偏移角相对于（111）面为0.1°至1°或-1°至-0.1°，主体中的平均掺杂剂浓度为1×10 18至1×10 21 cm -3，Si单晶 基板2在背面具有SiO 2膜，缓冲层3和半导体活性层4的总厚度为4〜10μm。

    VERTICAL WAFER BOAT
    6.
    发明公开
    VERTICAL WAFER BOAT 有权
    VERTIKALE WAFERHORDE

    公开(公告)号：EP2200072A1

    公开(公告)日：2010-06-23

    申请号：EP08836871.7

    申请日：2008-10-08

    申请人： Covalent Materials Corporation

    发明人： AOKI, Tatsuhiko ,  IZUNOME, Koji ,  ARAKI, Koji ,  INABA, Takeshi ,  YAMAGUCHI, Toshihiro ,  TABEI, Takahiro ,  HADA, Takashi ,  TANAKA, Tatsuya ,  KAWAMURA, Takafumi ,  KANEMARU, Eiichi ,  SEKIGUCHI, Masayuki

    IPC分类号： H01L21/22 ,  H01L21/205 ,  H01L21/324 ,  H01L21/683

    CPC分类号： H01L21/67309 ,  H01L21/68

    摘要： There is provided a vertical wafer boat by which the purifying efficiency of a purifying process is improved and which has wafer support portions the length of which is increased.
    A top plate 7 has an opening 7a formed using the center point of a wafer W to be mounted as its center and a slit portion 7b communicating with the opening 7 and formed to the insertion side of the wafer, the slit 7 has a width T which is 35% or more to 45% or less of the width φD of the top plate 7, further, upper surface corners 2a1 3a1, 4a1, and 5a1 are chamfered up to the position of 40% or more to 60% or less of the length of wafer support portions 2a, 3a, 4a, and 5a from the extreme ends of the wafer support portions 2a, 3a, 4a, and 5a toward direction of the support columns 2b, 3b, 4b, and 5b as well as the upper surface corners 2a2, 3a2, 4a2, and 5a2 from the position at which the chamfering is ended to the support columns 2b, 3b, 4b, and 5b is formed at an angle of 90° or less.

    摘要翻译： 提供了一种垂直晶片舟，通过该垂直晶片舟，净化过程的净化效率得到改善，并且其具有长度增加的晶片支撑部分。 顶板7具有利用要安装在其中心的晶片W的中心点形成的开口7a和与开口7连通并形成在晶片的插入侧的狭缝部分7b，狭缝7具有宽度T 其为顶板7的宽度ÆD的35％以上且45％以下，此外，上表面角部2a1,3a1,4a1,5a1被倒角至40％以上至60％以下的位置 晶片支撑部分2a，3a，4a和5a从晶片支撑部分2a，3a，4a和5a的前端朝向支撑柱2b，3b，4b和5b的方向的长度以及上部 从倒角结束的位置到支撑柱2b，3b，4b和5b的表面角2a2,3a2,4a2和5a2以90°或更小的角度形成。

    Crucible for melting silicon and release agent used to the same
    10.
    发明公开
    Crucible for melting silicon and release agent used to the same 审中-公开
    Tiegel zum Schmelzen von Silizium

    公开(公告)号：EP2116637A2

    公开(公告)日：2009-11-11

    申请号：EP09005113.7

    申请日：2009-04-07

    申请人： Covalent Materials Corporation

    发明人： Ohashi, Tadashi ,  Umemoto, Seijiro ,  Hitoki, Go

    IPC分类号： C30B11/00 ,  C30B15/10 ,  C30B29/06

    CPC分类号： C30B11/002 ,  C30B28/06 ,  C30B29/06 ,  C30B35/002 ,  Y10T117/1024

    摘要： The crucible for melting silicon according to the present invention is a crucible for melting silicon including a crucible main body including a heat-resistant member, and a protective film formed at least on an inner surface of the crucible main body, in which the protective film has a composition of SiO X N Y in which X > 0 and Y > 0. The crucible for melting silicon according to the present invention has excellent releasability to a silicon block, reduces the amount of impurities dissolved in a silicon melt, and can be produced at low cost. Furthermore, the present invention provides a release agent for use in the production of the crucible for melting silicon.

    摘要翻译： 根据本发明的用于熔化硅的坩埚是用于熔化硅的坩埚，其包括包括耐热构件的坩埚主体和至少形成在坩埚主体的内表面上的保护膜，其中保护膜 具有SiO XNY的组成，其中X> 0且Y> 0。根据本发明的用于熔化硅的坩埚对于硅块具有优异的可剥离性，减少了溶解在硅熔体中的杂质的量，并且可以在 低成本。 此外，本发明提供了一种用于生产用于熔化硅的坩埚的脱模剂。