公开(公告)号：EP3329509A1

公开(公告)日：2018-06-06

申请号：EP16754215.8

申请日：2016-08-01

申请人： Crayonano AS ,  Norwegian University of Science and Technology (NTNU)

发明人： KIM, Dong-Chul ,  HØIAAS, Ida Marie ,  MUNSHI, Mazid ,  FIMLAND, Bjørn Ove ,  WEMAN, Helge ,  REN, Dingding ,  DHEERAJ, Dasa

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/02376 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639

摘要： A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.