公开(公告)号：EP3323153B1

公开(公告)日：2020-09-02

申请号：EP16738445.2

申请日：2016-07-13

申请人： Crayonano AS ,  Norwegian University of Science and Technology (NTNU)

发明人： KIM, Dong Chul ,  HØIAAS, Ida Marie E ,  HEIMDAL, Carl Philip J. ,  FIMLAND, Bjørn Ove M. ,  WEMAN, Helge

IPC分类号： H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/44

公开(公告)号：EP4000089A1

公开(公告)日：2022-05-25

申请号：EP20742716.2

申请日：2020-07-16

申请人： Crayonano AS ,  Norwegian University of Science and Technology (NTNU)

发明人： MUNSHI, Mazid ,  WEMAN, Helge ,  DHEERAJ, Dasa L ,  FIMLAND, Bjorn-Ove M ,  VIGEN, Leidulv ,  BARRIET, David

IPC分类号： H01L21/20 ,  H01L33/00

公开(公告)号：EP3329509A1

公开(公告)日：2018-06-06

申请号：EP16754215.8

申请日：2016-08-01

申请人： Crayonano AS ,  Norwegian University of Science and Technology (NTNU)

发明人： KIM, Dong-Chul ,  HØIAAS, Ida Marie ,  MUNSHI, Mazid ,  FIMLAND, Bjørn Ove ,  WEMAN, Helge ,  REN, Dingding ,  DHEERAJ, Dasa

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/02376 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639

摘要： A process for growing nanowires or nanopyramids comprising: (I) providing a graphitic substrate and depositing AlGaN, InGaN, AlN or AlGa(In)N on said graphitic substrate at an elevated temperature to form a buffer layer or nanoscale nucleation islands of said compounds; (II) growing a plurality of semiconducting group III-V nanowires or nanopyramids, preferably III-nitride nanowires or nanopyramids, on the said buffer layer or nucleation islands on the graphitic substrate, preferably via MOVPE or MBE.

公开(公告)号：EP3323153A1

公开(公告)日：2018-05-23

申请号：EP16738445.2

申请日：2016-07-13

申请人： Crayonano AS ,  Norwegian University of Science and Technology (NTNU)

发明人： KIM, Dong Chul ,  HØIAAS, Ida Marie E ,  HEIMDAL, Carl Philip J. ,  FIMLAND, Bjørn Ove M. ,  WEMAN, Helge

IPC分类号： H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/44

摘要： A composition of matter comprising: a graphitic substrate optionally carried on a support, a seed layer having a thickness of no more than 50 nm deposited directly on top of said substrate, opposite any support; and an oxide or nitride masking layer e directly on top of said seed layer; wherein a plurality of holes are present through said seed layer and through said masking layer to C said graphitic substrate; and wherein a plurality of nanowires or nanopyramids are grown from said substrate in said holes, said nanowres or nanopyramids comprising at least one semiconducting group III-V compound.

公开(公告)号：EP3323152A1

公开(公告)日：2018-05-23

申请号：EP16738444.5

申请日：2016-07-13

申请人： Crayonano AS ,  Norwegian University of Science and Technology (NTNU)

发明人： DHEERAJ, Dasa L. ,  KIM, Dong Chul ,  FIMLAND, Bjørn Ove M. ,  WEMAN, Helge

IPC分类号： H01L33/08 ,  H01L33/16 ,  H01L33/24

CPC分类号： H01L33/08 ,  H01L31/035227 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/184 ,  H01L31/1852 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L33/325

摘要： A light emitting diode device comprising: a plurality of nanowires or nanopyramids grown on a graphitic substrate, said nanowires or nanopyramids having a p-n or p-i-n junction, a first electrode in electrical contact with said graphitic substrate; a light reflective layer in contact with the top of at least a portion of said nanowires or nanopyramids, said light reflective layer optionally acting as a second electrode; optionally a second electrode in electrical contact with the top of at least a portion of said nanowires or nanopyramids, said second electrode being essential where said light reflective layer does not act as an electrode; wherein said nanowires or nanopyramids comprise at least one group III-V compound semiconductor; and wherein in use light is emitted from said device in a direction substantially opposite to said light reflective layer.

公开(公告)号：EP2803091B1

公开(公告)日：2020-12-09

申请号：EP13700167.3

申请日：2013-01-10

申请人： Norwegian University of Science and Technology (NTNU)

发明人： WEMAN, Helge ,  FIMLAND, Bjørn-Ove ,  KIM, Dong Chul

IPC分类号： H01L29/66 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/16 ,  H01L29/41

公开(公告)号：EP3610518A1

公开(公告)日：2020-02-19

申请号：EP18717339.8

申请日：2018-04-10

申请人： Norwegian University of Science and Technology (NTNU)

发明人： FIMLAND, Bjørn Ove Myking ,  WEMAN, Helge ,  REN, Dingding

IPC分类号： H01L33/00 ,  H01L33/16 ,  H01L33/08 ,  H01L33/24

公开(公告)号：EP3011587A1

公开(公告)日：2016-04-27

申请号：EP14731971.9

申请日：2014-06-23

申请人： Norwegian University of Science and Technology (NTNU)

发明人： FIMLAND, Bjørn-Ove ,  DASA, Dheeraj L ,  WEMAN, Helge

IPC分类号： H01L21/20

CPC分类号： C30B25/105 ,  C30B25/183 ,  C30B29/02 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02376 ,  H01L21/02455 ,  H01L21/02466 ,  H01L21/02469 ,  H01L21/02485 ,  H01L21/02538 ,  H01L21/02551 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/151 ,  H01L29/16 ,  H01L29/1606 ,  H01L29/20 ,  H01L29/22

摘要： A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.

摘要翻译： 一种包含石墨基底上的膜的物质组合物，所述膜已经在所述基底上外延生长，其中所述膜包含至少一种III-V族化合物或至少一种II-VI族化合物。

公开(公告)号：EP2865009A2

公开(公告)日：2015-04-29

申请号：EP13730280.8

申请日：2013-06-21

申请人： Norwegian University of Science and Technology (NTNU)

发明人： WEMAN, Helge ,  FIMLAND, Bjørn-Ove ,  KIM, Dong Chul

IPC分类号： H01L31/0224 ,  H01L31/0352

CPC分类号： H01L31/035227 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/1804 ,  H01L31/1828 ,  H01L31/184

摘要： A composition of matter, in particular a photovoltaic cell, comprising: at least one core semiconductor nanowire on a graphitic substrate, said at least one core nanowire having been grown epitaxially on said substrate wherein said nanowire comprises at least one group III-V compound or at least one group II-VI compound or at least one group IV element; a semiconductor shell surrounding said core nanowire, said shell comprising at least one group III-V compound or at least one group II-VI compound or at least one group IV element such that said core nanowire and said shell form a n-type semiconductor and a p-type semiconductor respectively or vice versa; and an outer conducting coating surrounding said shell which forms an electrode contact.

公开(公告)号：EP2803091A1

公开(公告)日：2014-11-19

申请号：EP13700167.3

申请日：2013-01-10

申请人： Norwegian University of Science and Technology (NTNU)

发明人： WEMAN, Helge ,  FIMLAND, Bjørn-Ove ,  KIM, Dong Chul

IPC分类号： H01L29/66 ,  B82Y10/00 ,  B82Y40/00 ,  H01L29/06 ,  H01L29/16 ,  H01L29/41

CPC分类号： H01L33/24 ,  B82Y10/00 ,  B82Y40/00 ,  C30B25/005 ,  C30B29/42 ,  H01L29/0676 ,  H01L29/1606 ,  H01L29/413 ,  H01L29/66469 ,  H01L31/022466 ,  H01L31/0304 ,  H01L31/035281 ,  H01L31/036 ,  H01L31/1852 ,  H01L31/1884 ,  H01L33/0066 ,  H01L33/18 ,  H01L33/30 ,  H01L33/42 ,  H01L2933/0016

摘要： A composition of matter comprising a plurality of nanowires on a substrate, said nanowires having been grown epitaxially on said substrate in the presence of a metal catalyst such that a catalyst deposit is located at the top of at least some of said nanowires, wherein said nanowires comprise at least one group lll-V compound or at least one group II-VI compound or comprises at least one non carbon group IV element; and wherein a graphitic layer is in contact with at least some of the catalyst deposits on top of said nanowires.