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1.发明公开GROUP III NITRIDE LED WITH UNDOPED CLADDING LAYER AND MULTIPLE QUANTUM WELL 有权未掺杂的涂层和多量子阱结构的III族氮化物发光二极管
公开(公告)号：EP1514313A2
公开(公告)日：2005-03-16
申请号：EP03764297.2
申请日：2003-05-20
申请人： CREE, INC.
发明人： EDMOND, John, Adam , DOVERSPIKE, Kathleen, Marie , KONG, Hua-Shuang , BERGMANN, Michael, John , Emerson, David, Todd
IPC分类号： H01L33/00
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1-x-yN, where 0≤x≤ 1 and 0≤ y
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2.发明授权GROUP III NITRIDE LIGHT EMITTING DIODE WITH UNDOPED CLADDING LAYER AND MULTIPLE QUANTUM WELL 有权未掺杂的涂层和多量子阱结构的III族氮化物发光二极管
公开(公告)号：EP1514313B1
公开(公告)日：2016-07-20
申请号：EP03764297.2
申请日：2003-05-20
申请人： Cree, Inc.
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