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公开(公告)号：EP1792353A1
公开(公告)日：2007-06-06
申请号：EP05812300.1
申请日：2005-09-15
申请人： CREE, INC.
发明人： EDMOND, John, Adam
摘要： A light emitting diode is disclosed with advantageous output on a per unit area basis. The diode includes an area of less than 100,000 square microns, operates at a forward voltage of less than 4.0 volts, produces a radiant flux of at least 24 milliwatts at 20 milliamps drive current, and emits at a dominant wavelength between about 395 and 540 nanometers.
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3.发明授权
公开(公告)号：EP2356375B1
公开(公告)日：2016-01-06
申请号：EP09752079.5
申请日：2009-11-10
申请人： Cree, Inc.
CPC分类号： F21V15/01 , F21K9/00 , F21K9/61 , F21K9/64 , F21V29/70 , F21Y2115/10 , G02B6/0003 , G02B6/001 , G02B6/0035 , G02B6/005 , G02B6/0096
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4.发明公开
公开(公告)号：EP1741146A2
公开(公告)日：2007-01-10
申请号：EP05740313.1
申请日：2005-04-27
申请人： CREE, INC.
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/38 , H01L33/62 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： An LED chip includes a bond pad suitable for thermosonic or thermocompression bonding such as Sn, AuSn or other metals. The physical dimensions of the bond pad are selected to discourage or prevent solder squeeze-out during thermocompression or thermosonic bonding with or without flux. In some embodiments, an AuSn bond pas is designed to accept 30g to 70g of force or more without squeeze-out.
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5.发明公开GROUP III NITRIDE LED WITH UNDOPED CLADDING LAYER AND MULTIPLE QUANTUM WELL 有权未掺杂的涂层和多量子阱结构的III族氮化物发光二极管
公开(公告)号：EP1514313A2
公开(公告)日：2005-03-16
申请号：EP03764297.2
申请日：2003-05-20
申请人： CREE, INC.
发明人： EDMOND, John, Adam , DOVERSPIKE, Kathleen, Marie , KONG, Hua-Shuang , BERGMANN, Michael, John , Emerson, David, Todd
IPC分类号： H01L33/00
摘要： The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1-x-yN, where 0≤x≤ 1 and 0≤ y
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公开(公告)号：EP1116282A2
公开(公告)日：2001-07-18
申请号：EP99967073.0
申请日：1999-09-16
申请人： CREE, INC.
发明人： DOVERSPIKE, Kathleen, Marie , EDMOND, John, Adam , KONG, Hua-shuang , DIERINGER, Heidi, Marie , SLATER, David, B., Jr.
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/007 , H01L33/12 , H01L33/32
摘要： A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting diode includes a conductive silicon carbide substrate, an InGaN quantum well, a conductive buffer layer between the substrate and the quantum well, a respective undoped gallium nitride layer on each surface of the quantum well, and ohmic contacts in a vertical geometry orientation.
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7.发明公开ROBUST GROUP III NITRIDE LIGHT EMITTING DIODE FOR HIGH RELIABILITY IN STANDARD APPLICATIONS 有权鲁棒发光二极管由氮化物化合物III GROUP对高可靠性的标准PACKS
公开(公告)号：EP1018169A2
公开(公告)日：2000-07-12
申请号：EP98945787.4
申请日：1998-08-28
申请人： CREE, INC.
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/40 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, and ohmic contact to the p-type contact layer, and a passivation layer on the ohmic contact. The diode is characterized in that it will emit at least 50 % of its original optical power and remain substantially unchanged in operating voltage after operating for at least 1000 hours at 10 milliamps in an environment of 85 % relative humidity at a temperature of 85 °C. An LED lamp incorporating the diode is also disclosed.
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公开(公告)号：EP1792353B1
公开(公告)日：2020-03-11
申请号：EP05812300.1
申请日：2005-09-15
申请人： Cree, Inc.
发明人： EDMOND, John, Adam
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9.发明授权GROUP III NITRIDE LIGHT EMITTING DIODE WITH UNDOPED CLADDING LAYER AND MULTIPLE QUANTUM WELL 有权未掺杂的涂层和多量子阱结构的III族氮化物发光二极管
公开(公告)号：EP1514313B1
公开(公告)日：2016-07-20
申请号：EP03764297.2
申请日：2003-05-20
申请人： Cree, Inc.
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公开(公告)号：EP1116282B1
公开(公告)日：2010-02-24
申请号：EP99967073.0
申请日：1999-09-16
申请人： CREE, INC.
发明人： DOVERSPIKE, Kathleen, Marie , EDMOND, John, Adam , KONG, Hua-shuang , DIERINGER, Heidi, Marie , SLATER, David, B., Jr.
IPC分类号： H01L33/00
CPC分类号： H01L33/0025 , H01L33/007 , H01L33/12 , H01L33/32
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