公开(公告)号：EP2117039B1

公开(公告)日：2015-03-18

申请号：EP09158455.7

申请日：2009-04-22

申请人： Cree, Inc.

发明人： Sheppard, Scott T ,  Smith, R. Peter ,  Wu, Yifeng ,  Heikman, Sten ,  Jacob-Mitos, Matthew

IPC分类号： H01L21/335 ,  H01L29/778

CPC分类号： H01L21/26546 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： Methods of forming a semiconductor device include forming a dielectric layer (24) on a Group III-nitride semiconductor layer (22), selectively removing portions of the dielectric layer over spaced apart source and drain regions (31) of the semiconductor layer, implanting ions (27) having a first conductivity type directly into the source and drain regions of the semiconductor layer, annealing the semiconductor layer and the dielectric layer to activate the implanted ions, and forming metal contacts on the source and drain regions of the semiconductor layer.

公开(公告)号：EP2117039A3

公开(公告)日：2010-10-20

申请号：EP09158455.7

申请日：2009-04-22

申请人： Cree, Inc.

发明人： Sheppard, Scott T ,  Smith, R. Peter ,  Wu, Yifeng ,  Heikman, Sten ,  Jacob-Mitos, Matthew

IPC分类号： H01L21/335 ,  H01L29/778

CPC分类号： H01L21/26546 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： Methods of forming a semiconductor device include forming a dielectric layer (24) on a Group III-nitride semiconductor layer (22), selectively removing portions of the dielectric layer over spaced apart source and drain regions (31) of the semiconductor layer, implanting ions (27) having a first conductivity type directly into the source and drain regions of the semiconductor layer, annealing the semiconductor layer and the dielectric layer to activate the implanted ions, and forming metal contacts on the source and drain regions of the semiconductor layer.

公开(公告)号：EP1973163A3

公开(公告)日：2008-12-10

申请号：EP08250197.4

申请日：2008-01-16

申请人： CREE, INC.

发明人： Heikman, Sten ,  Wu, Yifeng

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/475 ,  H01L29/66462

摘要： A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.

摘要翻译： 一种能够在高温下实现高性能的晶体管器件。 晶体管包括具有接触有源区的接触层的栅极。 当与特定的半导体系统（例如III族氮化物）结合使用时，栅极接触层由具有高肖特基势垒的材料制成，并且当在高温下操作时表现出降低的退化。 该设备还可以包含场板以进一步增加设备的使用寿命。

公开(公告)号：EP1973163A2

公开(公告)日：2008-09-24

申请号：EP08250197.4

申请日：2008-01-16

申请人： CREE, INC.

发明人： Heikman, Sten ,  Wu, Yifeng

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/475 ,  H01L29/66462

摘要： A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.

公开(公告)号：EP2385558B1

公开(公告)日：2017-10-11

申请号：EP11176492.4

申请日：2008-01-16

申请人： Cree, Inc.

发明人： Heikman, Sten ,  Wu, Yifeng

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/475 ,  H01L29/66462

公开(公告)号：EP1947700B1

公开(公告)日：2016-01-06

申请号：EP07254498.4

申请日：2007-11-16

申请人： Cree, Inc.

发明人： Parikh, Primit ,  Heikman, Sten

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/66143 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/872

公开(公告)号：EP2385558A3

公开(公告)日：2013-08-21

申请号：EP11176492.4

申请日：2008-01-16

申请人： Cree, Inc.

发明人： Heikman, Sten ,  Wu, Yifeng

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/475 ,  H01L29/66462

摘要： A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.

摘要翻译： 一种能够在高温下实现高性能的晶体管器件。 晶体管包括具有接触有源区的接触层的栅极。 当与特定的半导体系统（例如III族氮化物）结合使用时，栅极接触层由具有高肖特基势垒的材料制成，并且当在高温下操作时表现出降低的退化。 该设备还可以包含场板以进一步增加设备的使用寿命。

公开(公告)号：EP2239776A3

公开(公告)日：2015-04-01

申请号：EP10159157.6

申请日：2010-04-06

申请人： Cree, Inc.

发明人： Ibbetson, James ,  Heikman, Sten

IPC分类号： H01L25/075

CPC分类号： H01L27/153 ,  H01L33/0079 ,  H01L2224/32245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A monolithic LED chip (60) is disclosed comprising a plurality of junctions or sub-LEDs (62a-c) mounted on a submount (64). The sub-LEDs are serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of serially interconnected sub-LEDs and the junction voltage of the sub-LEDs. Methods for fabricating a monolithic LED chip are also disclosed with one method comprising providing a single junction LED on a submount and separating the single junction LED into a plurality of sub-LEDs. The sub-LEDs are then serially interconnected such that the voltage necessary to drive the sub-LEDs is dependent on the number of the serially interconnected sub-LEDs and the junction voltage of the sub-LEDs.

公开(公告)号：EP2385558A2

公开(公告)日：2011-11-09

申请号：EP11176492.4

申请日：2008-01-16

申请人： Cree, Inc.

发明人： Heikman, Sten ,  Wu, Yifeng

IPC分类号： H01L29/778 ,  H01L21/335 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/475 ,  H01L29/66462

摘要： A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.

摘要翻译： 在高温下能够高性能的晶体管器件。 晶体管包括具有接触有源区的接触层的栅极。 当与特定的半导体系统（例如III族氮化物）结合使用时，栅极接触层由具有高肖特基势垒的材料制成，并且在高温下操作时表现出降低的降解。 该装置还可以包括场板以进一步增加装置的工作寿命。

公开(公告)号：EP1947700A3

公开(公告)日：2010-01-13

申请号：EP07254498.4

申请日：2007-11-16

申请人： CREE, INC.

发明人： Parikh, Primit ,  Heikman, Sten

IPC分类号： H01L29/872 ,  H01L21/329

CPC分类号： H01L29/66143 ,  H01L29/2003 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/872

摘要： A method of making a diode begins by depositing an Al x Ga 1-x N nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer (112), an n- GaN layer (110), an Al x Ga 1-x N barrier layer (108), and an SiO 2 dielectric layer. A portion of the dielectric layer is removed and a Schottky metal (106) deposited in the void. The dielectric layer is affixed to the support layer with a metal bonding layer using an Au-Sn utectic wafer bonding process, the substrate is removed using reactive ion etching to expose the n+ layer, selected portions of the n+, n-, and barrier layers are removed to form a mesa diode structure on the dielectric layer over the Schottky metal (106); and an ohmic (114) contact is deposited on the n+ layer (112).