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公开(公告)号:EP1570572A1
公开(公告)日:2005-09-07
申请号:EP03790018.0
申请日:2003-11-24
申请人: Cree Microwave, Inc.
IPC分类号: H03F3/68
CPC分类号: H03F3/602 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2223/6644 , H01L2224/48091 , H01L2224/49111 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01023 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13063 , H01L2924/13064 , H01L2924/19043 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要: Disclosed are a multi-chip power amplifier comprising a plurality of chips (20-23) with each chip being a transistor amplifier, and a housing (36) in which all of the semiconductor chips are mounted. A plurality of input leads extend into the housing and a plurality of output leads extend from the housing. A plurality of first matching networks (38) couple a semiconductor chip to an input lead and a plurality of second matching networks (40) couple each semiconductor chip to an output lead whereby each chip has its own input lead and output lead. By providing all amplifier chips within a single housing with matching networks within the housing coupling the chips to the input and output leads, manufacturing cost is reduced and the overall package footprint on a mounting substrate is reduced. Further, the close proximity of the chips within the housing reduces phase differences among signals in the semiconductor chips.