METHOD FOR PRODUCING ANTIFOULING FILM
    2.
    发明公开

    公开(公告)号:EP3485986A1

    公开(公告)日:2019-05-22

    申请号:EP17827473.4

    申请日:2017-07-03

    摘要: The present invention provides a method for producing an antifouling film capable of long-term continuous production of an antifouling film having excellent antifouling properties. The method for producing an antifouling film of the present invention is a method for producing an antifouling film including a polymer layer that includes on a surface thereof an uneven structure provided with multiple projections at a pitch not longer than a wavelength of visible light. The method includes Process (1) of applying a resin to a surface of a substrate; Process (2) of applying a second release agent to a surface of a die coated with a first release agent; Process (3) of pushing the substrate to the surface of the die coated with the second release agent with the resin in between to form the uneven structure on a surface of the resin; and Process (4) of curing the resin including the uneven structure on the surface thereof to form the polymer layer. The resin contains an antifouling agent that contains a predetermined compound. The first release agent contains a predetermined compound. The second release agent contains a predetermined compound.

    FUNCTIONAL FILM
    7.
    发明公开
    FUNCTIONAL FILM 审中-公开

    公开(公告)号:EP3514580A1

    公开(公告)日:2019-07-24

    申请号:EP17864696.4

    申请日:2017-10-24

    摘要: The invention provides a functional film that has a desired microrelief pattern structure, that sufficiently exerts characteristics of a resin serving as a main component for imparting functions to the functional film, and that has an excellent antifouling property, water-repellency, and oil-repellency. The functional film includes a layer (A) that contains a resin and a layer (B) that contains a compound containing a perfluoropolyether group. The layer (B) has a microrelief pattern structure on a surface remote from the layer (A) . In elemental analysis by X-ray photoelectron spectroscopy with etching by an argon gas cluster ion beam from the layer (B) side, the functional film satisfies the following formula (1): D1