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公开(公告)号：EP1660561A2
公开(公告)日：2006-05-31
申请号：EP04756358.0
申请日：2004-06-30
发明人： HU, Sanlin , MOYER, Eric, Scott , WANG, Sheng , WYMAN, David, Lee
IPC分类号： C08G77/24
CPC分类号： G03F7/0757 , C08G77/04 , C08G77/12 , G03F7/0046 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： This invention pertains to a silsesquioxane resin with improved lithographic properties (such as etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist; a method for incorporating the fluorinated or non-fluorinated functional groups onto silsesquioxane backbone. The silsesquioxane resins of this invention has the general structure (HSiO3/2)a(RSiO3/2)b wherein; R is an acid dissociable group, a has a value of 0.2 to 0.9 and b has a value of 0.1 to 0.8 and 0.9
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公开(公告)号：EP1810084A1
公开(公告)日：2007-07-25
申请号：EP05797438.8
申请日：2005-09-20
发明人： HU, Sanlin , MAGHSOODI, Sina , MOYER, Eric, Scott , WANG, Sheng
IPC分类号： G03F7/075
CPC分类号： G03F7/0757
摘要： A resist composition comprising (A) a hydrogen silsesquioxane resin, (B) an acid dissociable group-containing compound, (C) a photo-acid generator, (D) an organic solvent and optionally (E) additives. The resist composition has improved lithographic properties (such as high etch-resistance, transparency, resolution, sensitivity, focus latitude, line edge roughness, and adhesion) suitable as a photoresist.
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公开(公告)号：EP1660561B1
公开(公告)日：2014-02-12
申请号：EP04756358.0
申请日：2004-06-30
发明人： HU, Sanlin , MOYER, Eric, Scott , WANG, Sheng , WYMAN, David, Lee
IPC分类号： C08G77/24
CPC分类号： G03F7/0757 , C08G77/04 , C08G77/12 , G03F7/0046 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/115 , Y10S430/12 , Y10S430/122 , Y10S430/126 , Y10S430/143
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公开(公告)号：EP1810084B1
公开(公告)日：2014-01-15
申请号：EP05797438.8
申请日：2005-09-20
发明人： HU, Sanlin , MAGHSOODI, Sina , MOYER, Eric, Scott , WANG, Sheng
IPC分类号： G03F7/075
CPC分类号： G03F7/0757
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