公开(公告)号：EP2758507A1

公开(公告)日：2014-07-30

申请号：EP13720703.1

申请日：2013-04-24

申请人： Dynaloy, LLC

发明人： HOCHSTETLER, Spencer, Erich ,  ACRA, Travis ,  CAO, Yuanmei ,  PHENIS, Michael, Tod ,  POLLARD, Kimberly, Dona ,  PETERS, Richard, Dalton

IPC分类号： C11D11/00 ,  C11D7/32

摘要： Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices.

公开(公告)号：EP2915186A2

公开(公告)日：2015-09-09

申请号：EP13850348.7

申请日：2013-11-05

申请人： Dynaloy, LLC

发明人： HOCHSTETLER, Spencer, Erich ,  POLLARD, Kimberly, Dona ,  MOODY, Leslie, Shane ,  MACKENZIE, Peter, Borden ,  LIU, Junjia

IPC分类号： H01L21/228

CPC分类号： C07F9/78 ,  C07F9/70 ,  H01L21/2225 ,  H01L21/228 ,  H01L29/66803

摘要： Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.