公开(公告)号：EP2612348B1

公开(公告)日：2017-11-29

申请号：EP11757199.2

申请日：2011-08-19

Applicant: Evonik Degussa GmbH

Inventor： WIEBER, Stephan ,  PATZ, Matthias ,  STÜGER, Harald ,  LEHMKUHL, Jasmin

IPC: H01L21/228 ,  H01L21/02 ,  C07F9/50 ,  H01L31/18 ,  C23C18/12

CPC classification number: H01L21/02381 ,  C23C18/1204 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/14 ,  H01L21/0237 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/228 ,  H01L29/16 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2276058B1

公开(公告)日：2016-02-17

申请号：EP10182228.6

申请日：2000-02-29

Applicant: BASF SE

Inventor： Heider, Lilia ,  Wiegand, Claudia ,  Kuebelbeck, Armin ,  Stockum, Werner

IPC: H01L21/033 ,  C09D183/06

CPC classification number: H01L21/2255 ,  C09D183/02 ,  H01L21/2225 ,  H01L21/228 ,  H01L31/0288 ,  H01L31/068 ,  Y02E10/547 ,  Y10S252/95 ,  Y10S438/923

公开(公告)号：EP2915186A2

公开(公告)日：2015-09-09

申请号：EP13850348.7

申请日：2013-11-05

Applicant: Dynaloy, LLC

Inventor： HOCHSTETLER, Spencer, Erich ,  POLLARD, Kimberly, Dona ,  MOODY, Leslie, Shane ,  MACKENZIE, Peter, Borden ,  LIU, Junjia

IPC: H01L21/228

CPC classification number: C07F9/78 ,  C07F9/70 ,  H01L21/2225 ,  H01L21/228 ,  H01L29/66803

Abstract: Formulations of solutions and processes are described to form a substrate including a dopant. In particular implementations, the dopant may include arsenic (As). In an embodiment, a dopant solution is provided that includes a solvent and a dopant. In a particular embodiment, the dopant solution may have a flashpoint that is at least approximately equal to a minimum temperature capable of causing atoms at a surface of the substrate to attach to an arsenic-containing compound of the dopant solution. In one embodiment, a number of silicon atoms at a surface of the substrate are covalently bonded to the arsenic-containing compound.

公开(公告)号：EP2901491A2

公开(公告)日：2015-08-05

申请号：EP13841126.9

申请日：2013-06-12

Applicant: Intel Corporation

Inventor： DEWEY, Gilbert ,  CHAU, Robert, S. ,  RADOSAVLJEVIC, Marko ,  THEN, Han, Wui ,  CLENDENNING, Scott, B. ,  PILLARISETTY, Ravi

IPC: H01L29/786 ,  H01L21/18

CPC classification number: H01L29/66803 ,  B82Y10/00 ,  H01L21/2233 ,  H01L21/228 ,  H01L21/28264 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/20 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/78681 ,  H01L29/78696

Abstract: A high-k gate dielectric interface with a group III-V semiconductor surface of a non-planar transistor channel region is non-directionally doped with nitrogen. In nanowire embodiments, a non-directional nitrogen doping of a high-k gate dielectric interface is performed before or concurrently with a conformal gate electrode deposition through exposure of the gate dielectric to liquid, vapor, gaseous, plasma, or solid state sources of nitrogen. In embodiments, a gate electrode metal is conformally deposited over the gate dielectric and an anneal is performed to uniformly accumulate nitrogen within the gate dielectric along the non-planar III-V semiconductor interface.

公开(公告)号：EP2771911A1

公开(公告)日：2014-09-03

申请号：EP12775522.1

申请日：2012-10-24

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： MORICEAU, Hubert ,  FOURNEL, Franck ,  MORALES, Christophe ,  RAUER, Caroline

IPC: H01L21/762

CPC classification number: H01L21/76251 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/2007 ,  H01L21/223 ,  H01L21/228 ,  H01L21/30625 ,  H01L21/3105

Abstract: A method for treating at least one first layer of material comprising siloxane bonds, at least one surface of which is intended to be secured to a surface of a second layer of material by means of direct bonding, comprising at least one step of forced diffusion, at a temperature at least equal to approximately 30°C and at least in the first layer of material, of chemical species including at least one free electron pair and at least one labile proton, transforming at least one part of the siloxane bonds into silanol bonds in at least one part of the first layer of material extending from said surface to a depth greater than or equal to approximately 10 nm.

公开(公告)号：EP2495770A1

公开(公告)日：2012-09-05

申请号：EP10826597.6

申请日：2010-10-21

Applicant: Hitachi Chemical Company, Ltd.

Inventor： OKANIWA, Kaoru

IPC: H01L31/04

CPC classification number: H01L31/068 ,  H01L21/228 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: The occurrence of internal stress is reduced during the solar cell production process, thereby reducing crystal defects and recombination loss. Provided is a method for producing a solar cell having a p-n junction, which involves a step for forming a p-type layer on a semiconductor substrate by applying a coating liquid for diffusion containing impurity which serves as an acceptor, and by diffusing the impurity by means of thermal diffusion and/or a step for forming an n-type layer on a semiconductor substrate by applying a coating liquid for diffusion containing impurity which serves as a donor, and by diffusing the impurity through a thermal diffusion treatment.

Abstract translation: 太阳能电池生产过程中内部应力的发生减少，从而减少晶体缺陷和复合损失。 本发明提供一种具有pn结的太阳能电池的制造方法，该方法包括以下工序：在半导体基板上涂布含有作为受体的杂质的扩散用涂布液，通过扩散该杂质，从而在半导体基板上形成p型层 热扩散的手段和/或在半导体基板上形成n型层的工序，其中，涂布含有作为供体的杂质的扩散用涂布液，通过热扩散处理扩散该杂质。

公开(公告)号：EP1284306B1

公开(公告)日：2011-08-03

申请号：EP02018077.4

申请日：2002-08-13

Applicant: JSR Corporation

Inventor： Shiho, Hiroshi, c/o JSR Corporation ,  Kato, Hitoshi, c/o JSR Corporation

IPC: C23C18/12 ,  H01L31/028 ,  B05D7/00

CPC classification number: H01L31/1804 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/228 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2319093A1

公开(公告)日：2011-05-11

申请号：EP09782220.9

申请日：2009-08-26

Applicant: SCHOTT Solar AG

Inventor： VAAS, Knut ,  SCHUM, Berthold ,  SCHMIDT, Wilfried ,  FRANKE, Dieter ,  SCHWIRTLICH, Ingo

IPC: H01L31/18 ,  H01L21/228 ,  H01L21/318

CPC classification number: H01L21/316 ,  H01L21/228 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/6715 ,  H01L31/18

Abstract: The invention relates to a method for producing at least one functional layer on at least one region of a surface of a semiconductor component by applying a liquid to at least the one region, wherein the functional layer has a layer thickness d
1 and the liquid required for forming the functional layer having the thickness di has a layer thickness d
2 . In order that functional layers having a desired thin and uniform thickness are produced in a reproducible manner, it is proposed that the liquid is applied to the at least one region of the surface in excess with a layer thickness d
3 where d
3 > d
2 and that subsequently, either with the semiconductor component moved in translational fashion or with the semiconductor component arranged in stationary fashion, excess liquid is removed from the surface in a contactless manner to an extent such that the liquid layer has the thickness d
2 or approximately the thickness d2.

公开(公告)号：EP2040310A2

公开(公告)日：2009-03-25

申请号：EP08100137.2

申请日：2008-01-07

Applicant: LG Electronics Inc.

Inventor： Choi, Yong Woo, LG ELECTRONICS INC. ,  Choe, Young Ho, LG ELECTRONICS INC. ,  Kim, Hyung Seok, LG ELECTRONICS INC. ,  Lee, Young Hee, LG ELECTRONICS INC.

IPC: H01L31/18 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/075

CPC classification number: H01L31/03762 ,  B82Y20/00 ,  B82Y30/00 ,  H01L21/228 ,  H01L31/035281 ,  H01L31/03845 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: Disclosed are a solar cell manufactured using a composite thin film comprising amorphous silicon and nanocrystalline silicon, a method of manufacturing the solar cell, and a composition for the composite thin film used in manufacturing the solar cell.
The solar cell of the present invention is manufactured by dispersing the crystalline silicon nanoparticles in the liquid silicon precursor, coating the dispersion on a substrate or printing the substrate with the dispersion, and heating the coated or printed substrate to modify the liquid silicon precursor into the amorphous silicon.
According to the present invention, expensive equipments are not needed to form a composite thin film comprising both of amorphous silicon and crystalline silicon. In addition, it is possible to form a composite thin film comprising plural materials with different band gap energy which can remarkably improve conversion efficiency of a solar cell by using a liquid precursor and nanocrystalline particles in a solution process with low production cost.

Abstract translation: 本发明公开了使用复合薄膜，其含有非晶硅和纳米晶体硅，制造太阳能电池的方法，以及用于在制造太阳能电池用复合薄膜的组合物制造的太阳能电池。 本发明的太阳能电池由晶体硅纳米粒子分散在液体中的硅前驱物，涂布在基底上的分散体或与分散印刷的基材，并加热该涂布或印刷的基材中以改变液体硅前体引入制 非晶硅。 。根据本发明，不需要昂贵的设备，以形成复合薄膜，其含有两种非晶硅和结晶硅。 此外，也可以形成复合薄膜，其含有具有不同带隙能量可以通过在具有低生产成本的溶液工艺中使用液体前体和纳米晶体颗粒显着地提高太阳能电池的转换效率的多种材料。

公开(公告)号：EP3065191A1

公开(公告)日：2016-09-07

申请号：EP16000660.7

申请日：2009-10-26

Applicant: The Regents of the University of Michigan

Inventor： Forrest, Stephen, R. ,  Bailey-Salzman, Rhonda, F.

IPC: H01L51/44

CPC classification number: H01L51/4246 ,  H01L21/2225 ,  H01L21/228 ,  H01L27/302 ,  H01L51/0053 ,  H01L51/0072 ,  H01L51/0078 ,  H01L51/424 ,  H01L51/441 ,  H01L51/442 ,  Y02E10/549

Abstract: A method for producing an inverted photosensitive device, comprising: providing a metal reflective electrode; performing at least an ultra-violet ozone (UV-O 3 ) or plasma surface treatment on the metal reflective electrode; forming an organic donor-acceptor heterojunction over the metal reflective electrode; and forming a transparent electrode over the organic donor-acceptor heterojunction.

Abstract translation: 一种制造反转感光装置的方法，包括：提供金属反射电极; 在金属反射电极上进行至少一种紫外线臭氧（UV-O 3）或等离子体表面处理; 在金属反射电极上形成有机供体 - 受体异质结; 并在有机供体 - 受体异质结上形成透明电极。