摘要:
A method of producing a device with a ferroelectric crystal thin film on a first substrate (12) comprises the steps of providing a ferroelectric crystal (1), of irradiating a first surface of said ferroelectric crystal with ions (2) so that a damaged layer (3) is created underneath said first surface, of bonding a block (19) of material including said first substrate (12) to said ferroelectric crystal to create a bonded element (21), wherein an interface is formed between said first surface and a second surface of said block, and of heating the bonded element and separating it at the damaged layer, so that a ferroelectric crystal layer (22) remains supported by the first substrate. By this method, very thin films - down to thicknesses a fraction of a micrometer - of ferroelectric crystals may be fabricated without jeopardizing the monocrystalline structure. According to a preferred embodiment, prior to bonding the block to the second substrate, the first substrate is provided with a electrode layer (13) prior to the bonding. In this way, a thin ferroelectric crystal layer may even be subjected to an applied voltage by electrodes.
摘要:
The invention concerns Phenolic Configurationally Locked Polyene Single Crystals, which are especially suited as highly efficient nonlinear optical organic material. The invention also concerns methods for growth of crystalline thin films or bulk crystals from melt and/or solution. The compounds are suited and the methods may be used for manufacturing optical elements for several bulk and integrated applications, e.g. electro-Optics and THz-Wave applications.
摘要:
A method of producing a device with a ferroelectric crystal thin film on a first substrate (12) comprises the steps of providing a ferroelectric crystal (1), of irradiating a first surface of said ferroelectric crystal with ions (2) so that a damaged layer (3) is created underneath said first surface, of bonding a block (19) of material including said first substrate (12) to said ferroelectric crystal to create a bonded element (21), wherein an interface is formed between said first surface and a second surface of said block, and of heating the bonded element and separating it at the damaged layer, so that a ferroelectric crystal layer (22) remains supported by the first substrate. By this method, very thin films - down to thicknesses a fraction of a micrometer - of ferroelectric crystals may be fabricated without jeopardizing the monocrystalline structure. According to a preferred embodiment, prior to bonding the block to the second substrate, the first substrate is provided with a electrode layer (13) prior to the bonding. In this way, a thin ferroelectric crystal layer may even be subjected to an applied voltage by electrodes.