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1.
公开(公告)号:EP3357083A1
公开(公告)日:2018-08-08
申请号:EP16777659.0
申请日:2016-09-29
申请人: Electricité de France , Paris Sciences et Lettres - Quartier Latin , Centre National de la Recherche Scientifique (CNRS)
IPC分类号: H01L21/368 , C23C18/14
CPC分类号: H01L21/02568 , C23C18/1204 , C23C18/14 , H01L21/02557 , H01L21/02628
摘要: The invention relates to a method for depositing a semiconductor thin layer (CM) comprising at least one sulphide of a metal species, the deposition being performed on a semiconductor film (F) arranged in a chemical bath (BC), the method comprising the steps of: preparing the chemical bath (BC) using at least one sulphurated precursor of said sulphide of a metal species and a salt containing said at least one metal species, the at least one sulphurated precursor containing a thioacid; and forming the thin layer (CM) by illumination by means of a light source (S) of the chemical bath (BC) and the semi-conductive film (F).