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1.发明公开
公开(公告)号：EP3357083A1
公开(公告)日：2018-08-08
申请号：EP16777659.0
申请日：2016-09-29
申请人： Electricité de France , Paris Sciences et Lettres - Quartier Latin , Centre National de la Recherche Scientifique (CNRS)
IPC分类号： H01L21/368 , C23C18/14
CPC分类号： H01L21/02568 , C23C18/1204 , C23C18/14 , H01L21/02557 , H01L21/02628
摘要： The invention relates to a method for depositing a semiconductor thin layer (CM) comprising at least one sulphide of a metal species, the deposition being performed on a semiconductor film (F) arranged in a chemical bath (BC), the method comprising the steps of: preparing the chemical bath (BC) using at least one sulphurated precursor of said sulphide of a metal species and a salt containing said at least one metal species, the at least one sulphurated precursor containing a thioacid; and forming the thin layer (CM) by illumination by means of a light source (S) of the chemical bath (BC) and the semi-conductive film (F).
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2.发明授权
公开(公告)号：EP2831920B1
公开(公告)日：2016-05-11
申请号：EP13719933.7
申请日：2013-03-28
IPC分类号： H01L31/0749 , H01L31/0392 , H01L31/0232 , H01L31/0216
CPC分类号： H01L31/02327 , H01L31/02168 , H01L31/03923 , H01L31/03928 , H01L31/0749 , Y02E10/52 , Y02E10/541 , Y02P70/521
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3.发明授权SULFURISATION ET SELENISATION DE COUCHES DE CIGS ELECTRODEPOSE PAR RECUIT THERMIQUE 有权硫化和电解进行硒化通过热退火沉积CIGS LAYERS
公开(公告)号：EP1883975B1
公开(公告)日：2012-12-19
申请号：EP06755519.3
申请日：2006-05-19
发明人： TAUNIER, STÈPHANE , LINCOT, Daniel , GUILLEMOLES, Jean-François , NAGHAVI, Negar , GUIMARD, Denis
IPC分类号： H01L31/032 , H01L31/18 , H01L31/0749
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
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4.发明公开SULFURISATION ET SELENISATION DE COUCHES DE CIGS ELECTRODEPOSE PAR RECUIT THERMIQUE 有权硫化和电解进行硒化通过热退火沉积CIGS LAYERS
公开(公告)号：EP1883975A1
公开(公告)日：2008-02-06
申请号：EP06755519.3
申请日：2006-05-19
发明人： TAUNIER, STÈPHANE , LINCOT, Daniel , GUILLEMOLES, Jean-François , NAGHAVI, Negar , GUIMARD, Denis
IPC分类号： H01L31/0336
CPC分类号： H01L31/0749 , H01L31/0322 , H01L31/1864 , H01L31/1872 , Y02E10/541 , Y02P70/521
摘要： The invention relates to a method for production of thin layers of semiconductor alloys of the I-III-VI2 type, including sulphur, for photovoltaic applications, whereby a heterostructure is firstly deposited on a substrate comprising a thin layer of precursor I-III-VI2 which is essentially amorphous and a thin layer, including at least some sulphur, the heterostructure is then annealed to promote the diffusion of the sulphur into the precursor layer and the at least partial crystallisation of the I-III-VI2 alloy of the precursor layer with a stoichiometry which hence includes sulphur. A layer of selenium may also be deposited to assist the recrystallisation processes or annealing.
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5.发明公开BAIN À MORPHOLINE ET PROCÉDÉ POUR LE DÉPÔT CHIMIQUE D'UNE COUCHE 审中-公开BAINÀMORPHOLINE ETPROCÉDÉPOUR LEDÉPÔTCHIMIQUE D'UNE COUCHE
公开(公告)号：EP3080334A1
公开(公告)日：2016-10-19
申请号：EP15706911.3
申请日：2015-02-12
CPC分类号： C23C2/04 , C23C18/1204 , C23C18/1216 , H01L31/0322 , H01L31/0326 , Y02E10/541
摘要： The invention relates to a chemical bath for depositing a layer made from at least metal and sulphur. It also relates to a method for depositing such a layer. This bath comprises, in solution: - a metal salt comprising a metal chosen from at least one of the elements from groups IIB and IIIA of the periodic table; and - a sulphur precursor. The bath further comprises a morpholine compound.
摘要翻译： 本发明涉及用于沉积由至少金属和硫制成的层的化学浴。 它还涉及用于沉积这种层的方法。 该溶液在溶液中包含： - 金属盐，其包含选自元素周期表第IIB和IIIA族元素中的至少一种元素的金属; 和 - 硫前体。 该浴还包含吗啉化合物。
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6.发明公开BAIN À PERSULFATE ET PROCÉDÉ POUR LE DÉPÔT CHIMIQUE D'UNE COUCHE 审中-公开BAIN-PERSULFATE ETPROCÉDÉPOUR LEDÉPÔTCHIMIQUE D'UNE COUCHE
公开(公告)号：EP3080332A1
公开(公告)日：2016-10-19
申请号：EP14827487.1
申请日：2014-12-09
摘要： The invention relates to a chemical bath for depositing a layer made from at least metal and sulphur. It also relates to a method for depositing such a layer. The bath comprises, in solution: - a metal salt comprising a metal chosen from at least one of the elements from groups IIB and IIIA of the periodic table; and - a sulphur precursor. The bath further comprises a persulfate compound.
摘要翻译： 本发明涉及用于沉积由至少金属和硫制成的层的化学浴。 它还涉及用于沉积这种层的方法。 所述浴在溶液中包含： - 包含选自元素周期表第IIB和IIIA族元素中的至少一种元素的金属的金属盐; 和 - 硫前体。 该浴还包含过硫酸盐化合物。
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7.发明公开STRUCTURE DE CELLULE PHOTOVOLTAÏQUE EN COUCHES MINCES AVEC UNE COUCHE MIROIR. 有权FOTOVOLTAISCHENDÜNNSCHICHTZELLENSTRUKTURMIT EINER SPIEGELSCHICHT
公开(公告)号：EP2831920A2
公开(公告)日：2015-02-04
申请号：EP13719933.7
申请日：2013-03-28
IPC分类号： H01L31/032
CPC分类号： H01L31/02327 , H01L31/02168 , H01L31/03923 , H01L31/03928 , H01L31/0749 , Y02E10/52 , Y02E10/541 , Y02P70/521
摘要： A thin-film photovoltaic cell structure with a mirror layer. The invention concerns a photovoltaic cell structure intended for applications in solar panels. The thin-film photovoltaic cell structure comprises at least one layer of I-III-VI2 alloy (CIGS) with photovoltaic properties, for converting an illuminating light into electricity. In particular, the structure comprises at least: - one mirror layer (MR) comprising a reflecting face (FR) for reflecting a portion of the illuminating light, the reflecting face (FR) being opposite a first face (F1) of the layer of I-III-VI2 alloy (CIGS), for receiving, on said first face, a reflected illuminating light, and - one or a plurality of first transparent layers (CA, ENC) transparent to said illuminating light, for receiving an illuminating light transmitted onto a second face (F2) of the layer of I-III-VI2 alloy (CIGS) opposite the first face (F1).
摘要翻译： 具有镜层的薄层光伏电池结构。 本发明涉及一种用于太阳能电池板应用的光伏电池结构。 薄层光伏电池结构包括具有用于将照明光转换成电的光伏特性的至少一个I-III-VI2合金层（CIGS）。 特别地，该结构至少包括：一个镜层（MR），其包括反射（FR）照明光的一部分的表面，其中所述反射表面（FR）面向I-III-的第一面（F1） VI2合金层，用于接收所述第一面上的反射照明光; 以及对于在与第一面（F1）相对的I-III-VI2合金层的第二面（F2）上用于接收透射照明光的照明光透明的一个或多个第一层（CA，ENC）。
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公开(公告)号：EP3080332B1
公开(公告)日：2020-10-21
申请号：EP14827487.1
申请日：2014-12-09
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