专利检索 ap:("FEI COMPANY") AND inv:"TIEMEIJER, Peter, C." 第 1 页

1.

发明授权
PARTICLE-OPTICAL APPARATUS INCLUDING A PARTICLE SOURCE THAT CAN BE SWITCHED BETWEEN HIGH BRIGHTNESS AND LARGE BEAM CURRENT 有权
标题翻译：带之间的高明亮的大喷流中的颗粒切换KORPUSKULAROPTISCHES UNIT

公开(公告)号：EP1105914B1

公开(公告)日：2007-03-07

申请号：EP00949186.1

申请日：2000-06-15

申请人： FEI COMPANY

发明人： TIEMEIJER, Peter, C.

IPC分类号： H01J37/063

CPC分类号： H01J37/063 , H01J2237/28

摘要： An electron source for, for example, an electron microscope cannot exhibit a high brightness and a large beam current at the same time, because the virtual emitter dimension is enlarged by Coulomb repulsion in the electron beam in the case of a large beam current, thus reducing the brightness. In a conventional electron source switching-over could take place from a high brightness to a large beam current by varying the dimension of a beam-limiting diaphragm; however, this is objectionable because the location of such a diaphragm is not readily accessible. In accordance with the invention said switching-over can take place by arranging two lenses (26, 28) in the source, which lenses parallelize. In the described circumstances the beam is either directly behind the emitter (4) (large current) or directly in front of the diaphragm aperture (32) (high brightness).

2.

发明授权
MULTI-ELECTRON -BEAM LITHOGRAPHY APPARATUS WITH MUTUALLY DIFFERENT BEAM LIMITING APERTURES 有权
标题翻译：具有不同照射DAZZLE MUCH RAY电子束平版印刷设备

公开(公告)号：EP1166319B1

公开(公告)日：2007-04-25

申请号：EP00985165.0

申请日：2000-12-13

申请人： FEI COMPANY

发明人： KRANS, Jan, M. , TIEMEIJER, Peter, C.

IPC分类号： H01J37/06

CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/06 , H01J37/3177 , H01J2237/06316 , H01J2237/0635

摘要： Multi-beam lithography apparatus is used for writing patterns on a substrate (14) such as a wafer for ICs. The patterns may have details of various dimensions. In order to enhance the production rate, it is attractive to write fine details with a small spot 16 and large details with a large spot. It is known to vary the spot size by varying the emissive surface of the electron source. In accordance with the invention the spot size is varied by varying the size (22) of the beam limiting aperture (20), thus enabling optimization of the beam current in dependence on the spot size. A preferred embodiment is provided with an additional (condenser) lens (24) such that the object distance remains constant when the magnification of the lens system (18, 24) is varied.