公开(公告)号：EP2346095A2

公开(公告)日：2011-07-20

申请号：EP11150672.1

申请日：2011-01-12

申请人： FEI COMPANY

发明人： Nanver, Lis ,  Scholtes, Thomas ,  Sakic, Agata ,  Van Veen, Gerard ,  Kooijman, Cees

IPC分类号： H01L31/118 ,  H01L31/0224

CPC分类号： H01L31/1185 ,  H01J37/244 ,  H01L31/022408 ,  H01L31/105

摘要： The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope.
The detector is a PIN photodiode with a thin layer of pure boron connected to the p + -diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode.
The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.

摘要翻译： 本发明公开了一种制造辐射探测器的方法，用于探测例如 200 eV电子。 这使得检测器适合于例如 在扫描电子显微镜中使用。 探测器是一个PIN光电二极管，带有一层薄的纯硼，连接到p +扩散层。 硼层连接到具有铝栅格的电极以在硼层的每个给定点与电极之间形成低电阻路径。 本发明解决了在硼层上形成铝栅格而不损坏硼层。 为此，通过用铝层完全覆盖硼层然后通过蚀刻去除部分铝层来形成铝的栅格，该蚀刻包括干法蚀刻的第一步骤（304），干法蚀刻的步骤 限定栅格，但在硼层的一部分上留下薄铝层以暴露，接着进行湿法蚀刻的第二步骤（308），湿法蚀刻的步骤将硼从硼层的一部分完全去除至步骤 被暴露。

公开(公告)号：EP2346095A3

公开(公告)日：2011-07-27

申请号：EP11150672.1

申请日：2011-01-12

申请人： FEI COMPANY

发明人： Nanver, Lis ,  Scholtes, Thomas ,  Sakic, Agata ,  Van Veen, Gerard ,  Kooijman, Cees

IPC分类号： H01L31/0224 ,  H01L31/118

CPC分类号： H01L31/1185 ,  H01J37/244 ,  H01L31/022408 ,  H01L31/105

摘要： The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope.
The detector is a PIN photodiode with a thin layer of pure boron connected to the p + -diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode.
The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.

公开(公告)号：EP2346094A1

公开(公告)日：2011-07-20

申请号：EP10150660.8

申请日：2010-01-13

申请人： FEI Company

发明人： Nanver, Lis ,  Scholtes, Thomas ,  Sakic, Agata ,  Kooijman, Cornelis ,  Veen, van, Gerard

IPC分类号： H01L31/118 ,  H01L31/0224

CPC分类号： H01L31/1185 ,  H01J37/244 ,  H01L31/022408 ,  H01L31/105

摘要： The invention discloses a process for manufacturing a radiation detector for detecting e.g. 200 eV electrons. This makes the detector suited for e.g. use in an Scanning Electron Microscope.
The detector is a PIN photodiode with a thin layer of pure boron connected to the p + -diffusion layer. The boron layer is connected to an electrode with an aluminium grid to form a path of low electrical resistance between each given point of the boron layer and the electrode.
The invention addresses forming the aluminium grid on the boron layer without damaging the boron layer. To that end the grid of aluminium is formed by covering the boron layer completely with a layer of aluminium and then removing part of the layer of aluminium by etching, the etching comprising a first step (304) of dry etching, the step of dry etching defining the grid but leaving a thin layer of aluminium on the part of the boron layer to be exposed, followed by a second step (308) of wet etching, the step of wet etching completely removing the aluminium from the part of the boron layer to be exposed.

摘要翻译： 本发明公开了一种用于制造辐射探测器的方法， 200 eV电子。 这使得检测器适合于例如。 用于扫描电子显微镜。 检测器是具有连接到p +扩散层的纯硼薄层的PIN光电二极管。 硼层与具有铝格栅的电极连接，以在硼层的每个给定点和电极之间形成低电阻的路径。 本发明涉及在硼层上形成铝格栅而不破坏硼层。 为此，通过用一层铝完全覆盖硼层，然后通过蚀刻去除铝的一部分来形成铝格栅，该蚀刻包括干蚀刻的第一步骤（304），干蚀刻步骤 限定栅格，但在要暴露的硼层的一部分上留下薄的铝层，随后进行湿蚀刻的第二步骤（308），将从硼层的一部分完全除去铝的步骤 被暴露。