公开(公告)号：EP1369255B1

公开(公告)日：2008-10-22

申请号：EP03012228.7

申请日：2003-06-06

申请人： FUJIFILM Corporation

发明人： Shibata, Norio ,  Nakada, Junji ,  Fujinawa, Jun

IPC分类号： H01L51/40 ,  B41M5/00 ,  H01L31/18 ,  H01L21/304 ,  H01L21/28 ,  H01L21/283 ,  H01L21/3205

CPC分类号： H01L21/76838 ,  C23C14/0005 ,  C23C14/086 ,  H01L21/28506 ,  H01L27/3211 ,  H01L51/0004 ,  H01L51/0013 ,  H01L51/005 ,  H01L51/0051 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0084 ,  H01L51/0097 ,  H01L51/56

公开(公告)号：EP1369933A3

公开(公告)日：2008-05-28

申请号：EP03012229.5

申请日：2003-06-06

申请人： FUJIFILM Corporation

发明人： Shibata, Norio ,  Nakada, Junji ,  Fujinawa, Jun

IPC分类号： H01L31/18 ,  H01L31/0392

CPC分类号： H01L31/18 ,  H01L31/0392 ,  H01L31/1892 ,  Y02E10/50

摘要： The film forming method first forms a film having at least one layer by a film forming process on a surface of a heat-resistant member having higher heat resistance than a substrate on which the film is to be formed and the film forming process includes a step of performing at a temperature higher than a heat resistance temperature of the substrate. The method thereafter transfers the film formed on the heat-resistant member to the surface of the substrate at a temperature less than the heat resistance temperature of the substrate.