Abstract:
A class of solvent resistant, flexible copolyimide substrates having high optical transparency (>80% from 400 to 750 nm) that is retained after brief exposure to 300° C., near-zero birefringence (
Abstract:
A trasparent PN junction device and an electronic device using the PN junction device are provided. The PN junction device to achieve above objects of the invention includes a support substrate, a capper chloride (CuCl) thin film layer, a transparent electrode layer, a first electrode and a second electrode. The capper chloride thin film layer is formed on the supporting substrate and operates as a P-type semiconductor layer. The transparent electrode layer is formed on the capper chloride thin film layer and operates as an N-type semiconductor layer. The first electrode is formed on the capper chloride thin film layer. The second electrode is formed on the transparent electrode layer. Further, the transparent electrode layer may include indium tin oxide (ITO) or indium zinc oxide (IZO).
Abstract:
The low-reflection coating of the present invention is adapted to be provided on at least one principal surface of a substrate. The low-reflection coating is a porous film having a thickness of 80 to 800 nm, the porous film including: fine silica particles being solid and spherical and having an average particle diameter of 80 to 600 nm; and a binder containing silica as a main component and containing a hydrophobic group, the fine silica particles being bound by the binder. The low-reflection coating contains 35 to 70 mass% of the fine silica particles, 25 to 64 mass% of the silica of the binder, and 0.2 to 10 mass% of the hydrophobic group of the binder. The low-reflection coating produces a transmittance gain of 1.5% or more when provided on the substrate.
Abstract:
Glasses are disclosed having a composition comprising the following oxides (in weight %): SiO2 61 to 70%, Al2O3 0 to 9%, Na2O 10 to 13%, K2O 0 to 1%, MgO 2 to 6%, CaO 6 to 16%, SrO 0 to 1%, ZrO2 2 to 15%, TiO2 0 to 1%. The glasses may have a strain point greater than 570° C., and good dimensional stability at high temperatures, making them suitable for fire protection glazings and substrates which are processed at elevated temperatures, e.g. substrates for display panels, information storage discs and semiconductor devices, including photovoltaic cells. Physical properties of the glasses, such as thermal expansion coefficient, density and refractive index, are disclosed, as are the melting and liquidus temperatures. The glasses are suitable for manufacture by the float process, yielding flat glass in the form of sheets.
Abstract:
Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, a first window layer including a first oxide on the light absorbing layer, and a second window layer provided on the first window layer and including a second oxide having a composition ratio of oxygen higher than a composition ratio of oxygen contained in the first oxide.
Abstract:
An aluminum foil includes a first main surface (1A) and a second main surface (1B) located opposite to the first main surface (1A). In at least one of the first main surface (1A) and the second main surface (1B), a surface roughness Ra is not more than 10 nm, a surface roughness Rz is not more than 40 nm in each of a rolling direction (X) and a direction (Y) perpendicular to the rolling direction (X), and the number of peak counts is not less than 10 when a reference length (L) is 40 µm, the number of peak counts being determined from a roughness curve in at least one of the rolling direction (X) and the direction (Y) perpendicular to the rolling direction (X).
Abstract:
The present invention proposes a thin-film solar cell structure, a method for manufacturing the same and a thin-film solar cell array. The method for manufacturing thin-film solar cell structures comprises: forming at least two first trenches through a first surface into said semiconductor substrate, forming at least one second trench through a second surface into said semiconductor substrate, said second trench located between two neighboring said first trenches; forming a first structure on sidewalls of each of said first trenches; forming a second structure on sidewalls of each of said second trench; and cutting or stretching said semiconductor substrate to form thin-film solar cell structures. The distance between the electrodes can be effectively shortened through the present invention such that the recombination rate between the electrons and the holes can be reduced and the bulk recombination current and the surface recombination current can be reduced to achieve the objective of improving power generation efficiency. The thin-film solar cell structure and the method for manufacturing the same proposed in the present invention can also save semiconductor material and reduce production cost.
Abstract:
The invention relates, in particular, to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least a step of producing previous patterns in a printable layer (110) overlying the underlying layer (120), the production of the previous patterns comprising the nanoimprinting of the printable layer (110) and leaving in place a continuous layer formed by the printable layer (110) and covering the underlying layer (120), characterised in that it comprises the following step: at least one step of modifying the underlying layer (120) by ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the printable layer (110) comprising the subsequent patterns, the implantation (421) parameters being chosen so as to form, in the underlying layer (120), implanted areas (122) and non-implanted areas, the non-implanted areas defining the subsequent patterns and having a geometry that is dependent on the previous patterns.