公开(公告)号：EP4204506A1

公开(公告)日：2023-07-05

申请号：EP21862651.3

申请日：2021-08-25

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： SCHAEFER, Zachary L. ,  TURNER, Eric ,  BALLESTEROS, Carl

IPC分类号： C09G1/02 ,  H01L21/304

公开(公告)号：EP3995550A1

公开(公告)日：2022-05-11

申请号：EP21206058.6

申请日：2021-11-02

申请人： FUJIFILM Electronic Materials U.S.A., Inc.

发明人： TURNER, Eric ,  MISHRA, Abhudaya ,  BALLESTEROS, Carl

IPC分类号： C09G1/02 ,  C08K5/523

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C 4 to C 40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

公开(公告)号：EP4121224A1

公开(公告)日：2023-01-25

申请号：EP21772020.0

申请日：2021-03-18

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： MISHRA, Abhudaya ,  BALLESTEROS, Carl ,  TURNER, Eric

IPC分类号： B08B7/00 ,  C11D3/20 ,  C11D3/37

公开(公告)号：EP4423796A1

公开(公告)日：2024-09-04

申请号：EP22887974.8

申请日：2022-10-21

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： TURNER, Eric ,  HU, Bin ,  LIANG, Yannan ,  JOHNSTON, James ,  MCDONOUGH, James

IPC分类号： H01L21/302 ,  C09G1/04 ,  C09K3/14

CPC分类号： H01L21/3212 ,  C09K3/1436 ,  C09G1/02

公开(公告)号：EP4314178A1

公开(公告)日：2024-02-07

申请号：EP22776388.5

申请日：2022-03-21

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： CHENG, Qingmin ,  HU, Bin ,  KELLY, Kristopher, D. ,  LIANG, Yannan ,  LEE, Hyosang ,  TURNER, Eric ,  MISHRA, Abhudaya

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/304

公开(公告)号：EP4204505A1

公开(公告)日：2023-07-05

申请号：EP21862647.1

申请日：2021-08-25

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： SCHAEFER, Zachary L. ,  TURNER, Eric ,  BALLESTEROS, Carl

IPC分类号： C09G1/02 ,  H01L21/304

公开(公告)号：EP3670621A1

公开(公告)日：2020-06-24

申请号：EP19173321.1

申请日：2019-05-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： TURNER, Eric ,  MISHRA, Abhudaya ,  BALLESTEROS, Carl

IPC分类号： C09G1/02

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C 12 to C 40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of about 2 to about 6.5.

公开(公告)号：EP3670620A1

公开(公告)日：2020-06-24

申请号：EP19172460.8

申请日：2019-05-03

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： BALLESTEROS, Carl ,  MISHRA, Abhudaya ,  TURNER, Eric

IPC分类号： C09G1/02

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a C 12 to C 40 hydrocarbon group and is separated by zero to ten alkylene oxide groups from the hydrophilic portion. The polishing composition has a pH of about 2 to about 6.5, and can have a ratio of a removal rate for a silicon oxide to a removal rate for a silicon nitride of at least about 3:1 when polishing a patterned wafer comprising at least silicon nitride patterns overlayed with at least silicon oxide.