公开(公告)号：EP3995550A1

公开(公告)日：2022-05-11

申请号：EP21206058.6

申请日：2021-11-02

申请人： FUJIFILM Electronic Materials U.S.A., Inc.

发明人： TURNER, Eric ,  MISHRA, Abhudaya ,  BALLESTEROS, Carl

IPC分类号： C09G1/02 ,  C08K5/523

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C 4 to C 40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of from about 2 to about 6.5.

公开(公告)号：EP3601460A1

公开(公告)日：2020-02-05

申请号：EP18775533.5

申请日：2018-03-27

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： LEONOV, Alexei P. ,  MISHRA, Abhudaya

IPC分类号： C09G1/02 ,  H01L21/306

公开(公告)号：EP4121224A1

公开(公告)日：2023-01-25

申请号：EP21772020.0

申请日：2021-03-18

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： MISHRA, Abhudaya ,  BALLESTEROS, Carl ,  TURNER, Eric

IPC分类号： B08B7/00 ,  C11D3/20 ,  C11D3/37

公开(公告)号：EP4314178A1

公开(公告)日：2024-02-07

申请号：EP22776388.5

申请日：2022-03-21

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： CHENG, Qingmin ,  HU, Bin ,  KELLY, Kristopher, D. ,  LIANG, Yannan ,  LEE, Hyosang ,  TURNER, Eric ,  MISHRA, Abhudaya

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/304

公开(公告)号：EP3888779A1

公开(公告)日：2021-10-06

申请号：EP21166220.0

申请日：2017-02-27

申请人： FUJIFILM Electronic Materials U.S.A., Inc.

发明人： CHOU, Shih-Pin ,  CHANG, Wen-Hung ,  MAHULIKAR, Deepak ,  VARGA, Tamas ,  MISHRA, Abhudaya

IPC分类号： B01F3/12 ,  B01F3/22 ,  B01F5/10 ,  B01F7/00 ,  B01F13/10 ,  B01F15/00 ,  C09G1/02 ,  B01F15/04 ,  B24B57/00 ,  B24B57/02

摘要： This disclosure features methods of forming chemical compositions. The method includes (1) mixing a plurality of continuous material flows in a mixing tank to form a chemical composition, each continuous material flow including at least one component of the composition; and (2) moving a continuous flow of the chemical composition to a packaging station downstream of the mixing tank. The mixing and moving steps are performed continuously. This disclosure also features systems that can be used to perform such methods.

公开(公告)号：EP3670621A1

公开(公告)日：2020-06-24

申请号：EP19173321.1

申请日：2019-05-08

申请人： Fujifilm Electronic Materials U.S.A., Inc.

发明人： TURNER, Eric ,  MISHRA, Abhudaya ,  BALLESTEROS, Carl

IPC分类号： C09G1/02

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion containing a C 12 to C 40 hydrocarbon group; and a hydrophilic portion containing at least one group selected from the group consisting of a sulfinite group, a sulfate group, a sulfonate group, a carboxylate group, a phosphate group, and a phosphonate group; in which the hydrophobic portion and the hydrophilic portion are separated by zero to ten alkylene oxide groups. The polishing composition can have a pH of about 2 to about 6.5.

公开(公告)号：EP3670620A1

公开(公告)日：2020-06-24

申请号：EP19172460.8

申请日：2019-05-03

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： BALLESTEROS, Carl ,  MISHRA, Abhudaya ,  TURNER, Eric

IPC分类号： C09G1/02

摘要： This disclosure relates to a polishing composition that includes at least one abrasive; at least one nitride removal rate reducing agent, an acid or a base; and water. The at least one nitride removal rate reduce agent can include a hydrophobic portion and a hydrophilic portion; in which the hydrophobic portion includes a C 12 to C 40 hydrocarbon group and is separated by zero to ten alkylene oxide groups from the hydrophilic portion. The polishing composition has a pH of about 2 to about 6.5, and can have a ratio of a removal rate for a silicon oxide to a removal rate for a silicon nitride of at least about 3:1 when polishing a patterned wafer comprising at least silicon nitride patterns overlayed with at least silicon oxide.

公开(公告)号：EP4423205A1

公开(公告)日：2024-09-04

申请号：EP22887973.0

申请日：2022-10-21

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： LIANG, Yannan ,  HU, Bin ,  MISHRA, Abhudaya ,  HUANG, Ting-Kai ,  ZHANG, Yibin ,  JOHNSTON, James ,  MCDONOUGH, James

IPC分类号： C09G1/02 ,  C23F3/04

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

公开(公告)号：EP4237501A1

公开(公告)日：2023-09-06

申请号：EP21887258.8

申请日：2021-10-25

申请人： FUJIFILM Electronic Materials U.S.A, Inc.

发明人： CHENG, Qingmin ,  HU, Bin ,  LIANG, Yannan ,  LEE, Hyosang ,  WEN, Liqing ,  ZHANG, Yibin ,  MISHRA, Abhudaya

IPC分类号： C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  C23F1/14 ,  H01L21/321

公开(公告)号：EP3476909A3

公开(公告)日：2019-08-21

申请号：EP18185990.1

申请日：2018-07-27

申请人： FUJIFILM Electronic Materials U.S.A., Inc.

发明人： MISHRA, Abhudaya

IPC分类号： C09G1/02 ,  H01L21/3105

摘要： Polishing compositions that can selectively and preferentially polish certain dielectric films over other dielectric films are provided herein. These polishing compositions include either cationic or anionic abrasives based on the target dielectric film to be removed and preserved. The polishing compositions utilize a novel electrostatic charge based design, where based on the charge of the abrasives and their electrostatic interaction (forces of attraction or repulsion) with the charge on the dielectric film, various material removal rates and polishing selectivities can be achieved.