公开(公告)号：EP0928021B1

公开(公告)日：2007-06-13

申请号：EP98917666.4

申请日：1998-04-23

申请人： SHARP KABUSHIKI KAISHA

发明人： KATAOKA, Kotaro ,  IWATA, Hiroshi ,  NAKANO, Masayuki, Room 201 LM Nara Yasuraginomichi

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/28 ,  H01L21/285

CPC分类号： H01L21/02043 ,  H01L21/28052 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76897 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for manufacturing a semiconductor device in which halogen atoms present on and in the surface of a silicon layer are partially removed to a concentration of 100 ppm or less and electrodes are formed on the resultant silicon layer, so that low-resistance electrodes can be formed and hence a highly reliable semiconductor device can be obtained.

公开(公告)号：EP0928021A1

公开(公告)日：1999-07-07

申请号：EP98917666.4

申请日：1998-04-23

申请人： SHARP KABUSHIKI KAISHA

发明人： KATAOKA, Kotaro ,  IWATA, Hiroshi ,  NAKANO, Masayuki, Room 201 LM Nara Yasuraginomichi

IPC分类号： H01L21/336 ,  H01L29/78 ,  H01L21/28

CPC分类号： H01L21/02043 ,  H01L21/28052 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/76897 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6659 ,  H01L2924/0002 ,  H01L2924/00

摘要： By removing halogen atoms existing on the surface of the silicon layer and in the subsurface thereof so that the concentration of halogen atoms becomes 100ppm or lower and forming an electrode on the resulting silicon layer, the electrode which has a low resistance can be produced, and a highly reliable semiconductor device can be produces as well.

公开(公告)号：EP0411088A4

公开(公告)日：1992-03-11

申请号：EP90902898

申请日：1990-02-02

申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION

发明人： GUCKEL, HENRY ,  SNIEGOWSKI, JEFFRY

IPC分类号： H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  F26B5/06 ,  G01L9/00 ,  H01L21/304 ,  H01L29/84 ,  B05D5/08

CPC分类号： H01L21/02043 ,  B81C1/0092 ,  B81C1/00928 ,  F26B5/06 ,  G01L9/0019 ,  G01L9/0042 ,  Y10T29/49103

摘要： Micromechanical structures (15) having surfaces closely spaced from surfaces of a substrate (11) are formed using normal wet etching techniques but are not dried in a conventional manner. While the substrate (11) with the microstructures (15) formed thereon is still wet, the substrate (11) is covered with a liquid that can be frozen, such as deionized water. The liquid on the flooded structure (15) is then frozen in a well controlled manner such that freezing is completed before the microstructure (15) is uncovered. The microstructures (15) are therefore undeflected and are covered by a solid on all surfaces. This solid is then sublimated at a predetermined temperature. Because the frozen liquid (e.g., ice) supports its own surface tension, the microstructures (15) are not drawn toward the substrate (11), as occurs with the drying of liquids. The sublimation of all the frozen liquid leaves undeflected microstructures (15) with no permanent bonding of the facing surfaces (16, 18) of the microstructure (15) and the substrate (11).

公开(公告)号：EP0273628A1

公开(公告)日：1988-07-06

申请号：EP87310963.1

申请日：1987-12-14

申请人： FUJITSU LIMITED

发明人： Kobayashi, Masanori

IPC分类号： H01L21/306 ,  B65B55/22

CPC分类号： H01L21/02043 ,  B08B7/0092 ,  B65B55/22 ,  H01L21/02063 ,  H01L21/67057 ,  H01L21/677 ,  Y10S438/974

摘要： A process for the production of semiconductor devices which comprises washing a cleaned semiconductor substrate (1) with or without one or more component parts formed thereon, with pure water (4), freezing pure water containing the washed substrate, preserving and/or transporting the ice(14)-covered substrate, and thawing and drying the substrate (7) before a subsequent process. The production process of the present invention can remove contamination on a surface of the semiconductor substrate in a wafer process and can inhibit the formation of a natural oxide coating on a surface of the substrate, thus shortening and simplifying the wafer process, increasing the quality and yield of the semiconductor devices, and enabling the cleaned substrate to be preserved for a long period and transported to distant areas or far countries.

摘要翻译： 一种用于生产半导体器件的方法，包括用纯水（4）清洗具有或不具有一种或多种组分的清洁的半导体衬底（1），冷冻含有洗涤过的衬底的纯水，保存和/或传输 冰（14）覆盖的基底，并且在随后的过程之前解冻和干燥基底（7）。 本发明的制造方法能够消除晶片工序中的半导体衬底的表面的污染，能够抑制衬底表面的自然氧化物涂层的形成，从而缩短并简化晶片工艺，提高质量， 半导体器件的产量，以及使得清洁的基底能够长时间保存并且被输送到远距离的区域或远的国家。

公开(公告)号：EP2907790A1

公开(公告)日：2015-08-19

申请号：EP13847732.8

申请日：2013-08-07

申请人： Shin-Etsu Chemical Co., Ltd.

发明人： KAWAI, Makoto ,  KUBOTA, Yoshihiro

IPC分类号： C01B31/02

CPC分类号： H01L21/76254 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/184 ,  C01B32/188 ,  C30B29/02 ,  C30B29/36 ,  C30B31/22 ,  C30B33/06 ,  H01L21/02043 ,  H01L21/324

摘要： The present invention relates to a method for producing a nanocarbon film using a hybrid substrate with which a nanocarbon film free from defects can be produced at low cost. This method is characterized in forming an ion implantation region by implanting ion into a single crystal silicon carbide substrate from a surface thereof and after bonding together the surface of the silicon carbide substrate implanted with ion and a surface of a base substrate, releasing the silicon carbide substrate at the ion implanted region to produce a hybrid substrate in which a thin film that includes the single crystal silicon carbide is transferred onto the base substrate, and then heating the hybrid substrate to sublime silicon atoms from the thin film that includes the single crystal silicon carbide so as to obtain the nanocarbon film.

摘要翻译： 本发明涉及一种使用可以以低成本生产无缺陷的纳米碳膜的混合基板的纳米碳膜的制造方法。 该方法的特征在于通过从其表面将离子注入到单晶碳化硅衬底中并在将离子和基底表面的碳化硅衬底的表面粘合在一起来形成离子注入区域，释放碳化硅 衬底，以产生其中将包含单晶碳化硅的薄膜转移到基底衬底上的混合衬底，然后加热混合衬底以使来自包括单晶硅的薄膜的硅原子升华 碳化物以获得纳米碳膜。

公开(公告)号：EP1571693A1

公开(公告)日：2005-09-07

申请号：EP03813297.3

申请日：2003-12-01

申请人： Shin-Etsu Handotai Co., Ltd

发明人： Ichikawa, Masashi, Shin-Etsu Handotai Co., Ltd ,  Kobayashi, Takeshi, Shin-Etsu Handotai Co., Ltd. ,  Iwabuchi, Miho, Shin-Etsu Handotai Co., Ltd.

IPC分类号： H01L21/02 ,  H01L21/76 ,  H01L27/12

CPC分类号： H01L21/76254 ,  H01L21/02043

摘要： The present invention provides a method for manufacturing an SOI wafer with high productivity in which generation of a void is suppressed in manufacturing the SOI wafer. The method for manufacturing an SOI wafer of the present invention comprises the steps of forming an insulating layer on at least one wafer of two starting wafers; and adhering the one wafer to the other wafer without an adhesive, wherein there is used as the starting wafer a wafer having no line defect on a surface thereof. Also, the method for manufacturing an SOI wafer of the present invention comprises the steps of: forming an insulating layer on at least one wafer of two starting wafers; and adhering the one wafer to the other wafer without an adhesive, wherein the starting wafer is subjected to high temperature heat treatment in advance.

摘要翻译： 本发明提供了一种用于制造具有高生产率的SOI晶片的方法，其中在制造SOI晶片时抑制了空隙的产生。 本发明的制造SOI晶片的方法包括以下步骤：在两个起始晶片的至少一个晶片上形成绝缘层; 并且在没有粘合剂的情况下将所述一个晶片粘附到另一个晶片，其中，在其表面上没有线缺陷的晶片用作起始晶片。 而且，本发明的制造SOI晶片的方法包括以下步骤：在两个起始晶片的至少一个晶片上形成绝缘层; 并且将该一个晶片粘贴到另一个晶片而不用粘合剂，其中预先对起始晶片进行高温热处理。

公开(公告)号：EP0883162A3

公开(公告)日：2001-04-18

申请号：EP98304401.7

申请日：1998-06-04

申请人： Sizary Limited

发明人： Zinman, Yosef ,  Korchmar, Ilya ,  Sergienko, Alex ,  Ravid, Arie ,  Schoichet, Lev

IPC分类号： H01L21/00 ,  H01L21/306

CPC分类号： H01L21/67313 ,  H01L21/02043 ,  H01L21/67028 ,  H01L21/67098 ,  H01L21/6732 ,  Y10S438/906

摘要： A wafer transfer device or boat and semiconductor cleaning apparatus including a wafer transfer device and a heatable reaction core is provided. The wafer transfer device has a first unit with a plurality of first slots for receiving a first group of semiconductor wafers and a second unit with a plurality of slots for receiving a second group of semiconductor wafers. The first slots alternate with the second slots. The first unit is connectable to a first voltage source and the second unit is connectable to a second voltage source. The second voltage source is more electronegative than the first one, Typically, the first group of semiconductor wafers have impurities therein which are to be removed and the second group of semiconductor wafers are to receive the impurities.

公开(公告)号：EP1049145A1

公开(公告)日：2000-11-02

申请号：EP99951187.6

申请日：1999-11-01

申请人： Shin-Etsu Handotai Co., Ltd

发明人： KATO, T., S. R & D Center, Shin-Etsu Handotai Co. ,  OKUNI, S., S. R & D Center, Shin-Etsu Handotai Co ,  IKEDA, S., S. R & D Center, Shin-EtsuHandotai Co ,  OKABE, K., Nagano Denshi Co., Ltd. ,  OSHIMA, H, Naoetsu Denshi Co., Ltd.

IPC分类号： H01L21/304 ,  H01L21/02

CPC分类号： H01L21/02013 ,  B24B7/228 ,  B24B37/042 ,  H01L21/02008 ,  H01L21/02024 ,  H01L21/02043 ,  H01L21/30604

摘要： There are provided a method for producing a semiconductor wafer that has high flatness and back surface characteristics that can solve the problems concerning the back surface of a wafer produced by the conventional surface grinding/double side polishing method and observed during the device production process, and to provide a semiconductor wafer having such characteristics. According to the present invention, there are provided a semiconductor wafer obtained by a process comprising flattening both sides of the wafer by surface grinding means, eliminating a mechanically damaged layer by an etching treatment, and then subjecting the wafer to a single side polishing treatment, wherein a back surface of the wafer has glossiness in a range of 20-80%, and a method for producing a semiconductor wafer, which comprises at least cutting out a wafer by slicing a semiconductor ingot, simultaneously grinding both of front surface and back surface of the wafer, then flattening the wafer by surface grinding means for separately grinding the front surface and the back surface under different conditions, removing a mechanically damaged layer by an etching treatment while maintaining flatness, and then subjecting the wafer to a single side polishing treatment.

摘要翻译： 提供了一种具有高平坦度和背面特性的半导体晶片的制造方法，能够解决通过现有的表面研磨/双面研磨法制造的晶片的背面以及在器件制造工序中观察到的问题， 以提供具有这种特性的半导体晶片。 根据本发明，提供一种半导体晶片，该半导体晶片通过以下工艺获得，该方法包括通过表面研磨装置使晶片的两侧平坦化，通过蚀刻处理消除机械损伤层，然后对晶片进行单面抛光处理， 其特征在于，所述晶片的背面具有20-80％的光泽度，以及半导体晶片的制造方法，所述半导体晶片的制造方法至少通过切割半导体晶锭来切割晶片，同时研磨前表面和后表面 的晶片，然后通过表面研磨装置对晶片进行平坦化，用于在不同条件下分别研磨前表面和后表面，通过蚀刻处理除去机械损伤层，同时保持平坦度，然后对晶片进行单面抛光处理 。

公开(公告)号：EP0601513B1

公开(公告)日：2000-09-27

申请号：EP93119619.0

申请日：1993-12-06

申请人： CANON KABUSHIKI KAISHA

发明人： Ichikawa, Takeshi, c/o Canon Kabushiki Kaisha

IPC分类号： H01L21/203 ,  C23C14/34 ,  C30B23/02

CPC分类号： H01L21/02043 ,  C30B23/002 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02661

公开(公告)号：EP0601513A3

公开(公告)日：1996-07-24

申请号：EP93119619.0

申请日：1993-12-06

申请人： CANON KABUSHIKI KAISHA

发明人： Ichikawa, Takeshi, c/o Canon Kabushiki Kaisha

IPC分类号： H01L21/203

CPC分类号： H01L21/02043 ,  C30B23/002 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02661

摘要： A method for forming a deposited film by a bias sputtering process comprises the steps of generating plasma between a target electrode holding a target material (18) provided in a vacuum container (11) and a substate electrode (14) holding a substrate (16) for forming deposited film, provided opposingly to the target electrode, by the use of a high-frequency energy to cause the target material to undergo sputtering, and applying a bias voltage to at least one of the target electrode (13) and the substate electrode (14) to form a deposited film comprised of atoms having deposited by sputtering on the substrate, wherein;
   a mixed-gas environment comprising a mixture of an inert gas and a hydrogen gas is formed in the vacuum container, and the target material (12) is subjected to sputtering while controlling H 2 O gas, CO gas and CO 2 gas in the mixed-gas environment to have a partial pressure of 1.0 × 10 -8 Torr or less each, to form an epitaxial film on the substrate (16) while maintaining a substrate temperature in the range of from 400°C to 700°C.