SEMICONDUCTOR MEMORY
    1.
    发明公开
    SEMICONDUCTOR MEMORY 审中-公开
    半导体存储器

    公开(公告)号:EP1542237A1

    公开(公告)日:2005-06-15

    申请号:EP02780005.1

    申请日:2002-11-06

    Abstract: A refresh signal is output in response to a refresh request generated at predetermined cycles, and a refresh operation is performed. The refresh operation ends when a conflict occurs between an access request and the refresh request. Consequently, an access operation corresponding to the access request can be started earlier with a reduction in access time. The access time can be reduced further by changing the end time of the refresh operation in accordance with the timing of supply of the access request. Since a test circuit for notifying the state of the refresh operation to exterior is formed, the operation margin of the refresh operation can be evaluated in a short time. As a result, it is possible to reduce the development period of the semiconductor memory.

    Abstract translation: 响应于以预定周期产生的刷新请求输出刷新信号,并且执行刷新操作。 刷新操作在访问请求和刷新请求之间发生冲突时结束。 因此,与访问请求相对应的访问操作可以随着访问时间的减少而提前开始。 通过根据提供访问请求的时间改变刷新操作的结束时间,可以进一步减少访问时间。 由于形成了用于向外部通知刷新操作的状态的测试电路,所以可以在短时间内评估刷新操作的操作余量。 结果,可以减少半导体存储器的开发周期。

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