公开(公告)号：EP1605500A1

公开(公告)日：2005-12-14

申请号：EP03708659.2

申请日：2003-03-17

申请人： FUJITSU LIMITED

发明人： YAGUCHI, Masaomi, c/o FUJITSU LIMITED

IPC分类号： H01L21/318 ,  H01L29/78

CPC分类号： C23C16/308 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31616 ,  H01L21/31645 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659

摘要： To provide a method of manufacturing a semiconductor device which can form an oxide film of Hf 1-x Al x O (0
The method comprises the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a surface of the heated silicon substrate, to deposit on the silicon substrate an Hf 1-x Al x O:N film (0.1