公开(公告)号：EP4391090A2

公开(公告)日：2024-06-26

申请号：EP24175523.0

申请日：2014-06-20

申请人： First Solar, Inc

发明人： Duggal, Anil Raj ,  Shiang, Joseph John ,  Huber, William Hullinger ,  Halverson, Adam Fraser

IPC分类号： H01L31/18

CPC分类号： H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.

公开(公告)号：EP4391090A3

公开(公告)日：2024-08-21

申请号：EP24175523.0

申请日：2014-06-20

申请人： First Solar, Inc

发明人： Duggal, Anil Raj ,  Shiang, Joseph John ,  Huber, William Hullinger ,  Halverson, Adam Fraser

IPC分类号： H01L31/0296 ,  H01L31/065 ,  H01L31/18 ,  H01L31/073

CPC分类号： H01L31/02966 ,  H01L31/065 ,  H01L31/073 ,  H01L31/1832 ,  Y02E10/543

摘要： A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer includes cadmium, tellurium, and selenium. A semiconductor layer is further disposed on the absorber layer, wherein a valence band offset between the semiconductor layer and the absorber layer is less than about 1.3 electron Volts, and a band gap of the semiconductor layer is in a range from about 1.2 electron Volts to about 3.5 electron Volts.