公开(公告)号：EP2650937B1

公开(公告)日：2016-09-21

申请号：EP13161838.1

申请日：2013-03-29

Applicant: Freescale Semiconductor, Inc.

Inventor： Hong, Cheong Min ,  Chang, Ko-Min ,  Zhou, Feng

IPC: H01L45/00

CPC classification number: H01L45/1633 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

公开(公告)号：EP2650937A2

公开(公告)日：2013-10-16

申请号：EP13161838.1

申请日：2013-03-29

Applicant: Freescale Semiconductor, Inc.

Inventor： Hong, Cheong Min ,  Chang, Ko-Min ,  Zhou, Feng

IPC: H01L45/00

CPC classification number: H01L45/1633 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A resistive random access memory (ReRAM) (10) includes a first metal layer (18) having a first metal and a metal-oxide layer (22) on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer (30) over the metal-oxide layer and a first continuous conductive barrier layer (18) in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.

Abstract translation: 电阻随机存取存储器（ReRAM）（10）包括在第一金属层上具有第一金属和金属氧化物层（22）的第一金属层（18）。 金属氧化物层包括第一金属。 ReRAM还包括在金属氧化物层上的第二金属层（30）和与第一金属层和金属氧化物层的侧壁物理接触的第一连续导电阻挡层（18）。

公开(公告)号：EP2650937A3

公开(公告)日：2015-01-28

申请号：EP13161838.1

申请日：2013-03-29

Applicant: Freescale Semiconductor, Inc.

Inventor： Hong, Cheong Min ,  Chang, Ko-Min ,  Zhou, Feng

IPC: H01L45/00

CPC classification number: H01L45/1633 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

Abstract: A resistive random access memory (ReRAM) (10) includes a first metal layer (18) having a first metal and a metal-oxide layer (22) on the first metal layer. The metal-oxide layer includes the first metal. The ReRAM further includes a second metal layer (30) over the metal-oxide layer and a first continuous conductive barrier layer (18) in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.