公开(公告)号：EP2414567B1

公开(公告)日：2013-11-20

申请号：EP11709883.0

申请日：2011-03-18

申请人： Freiberger Compound Materials GmbH

发明人： WUNDERER, Thomas ,  SCHWAIGER, Stephan ,  SCHWAIGER, Ilona ,  RÖSCH, Rudolph ,  LIPSKI, Frank ,  SCHOLZ, Ferdinand

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B25/02 ,  C30B25/04 ,  C30B25/18

CPC分类号： C30B23/025 ,  C30B23/04 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403

摘要： A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.

公开(公告)号：EP2414567A1

公开(公告)日：2012-02-08

申请号：EP11709883.0

申请日：2011-03-18

申请人： Freiberger Compound Materials GmbH

发明人： WUNDERER, Thomas ,  SCHWAIGER, Stephan ,  ARGUT, Ilona ,  RÖSCH, Rudolph ,  LIPSKI, Frank ,  SCHOLZ, Ferdinand

IPC分类号： C30B23/02 ,  C30B23/04 ,  C30B25/02 ,  C30B25/04 ,  C30B25/18

CPC分类号： C30B23/025 ,  C30B23/04 ,  C30B25/04 ,  C30B25/186 ,  C30B29/403

摘要： A method for producing a semipolar semiconductor crystal comprising a group III nitride (III-N) comprises the following steps: preparing a starting substrate (2) comprising sapphire (Al
2 O
3 ) and having a first surface (3), which is formed by a crystal plane of the family {11-23}; and epitaxially growing (17, 19) a semipolar crystal layer (18) comprising a group III nitride (III-N) on the starting substrate above the first surface (3) to form a second surface (22), which is formed by a crystal plane of the family {10‑11} in the group III nitride. GaN, in particular, is appropriate as the group III nitride. The following combinations of initial substrate (sapphire) and grown crystal (e.g. GaN) are proposed, in particular: {20-21}-GaN on {22-43}-sapphire, {10-12}-GaN on {11-26}-sapphire. The crystal orientation of GaN produced in the present case can be generalized to families of the form {20‑2/}, where / is equal to a natural number 1, 2, 3, 4, etc. However, {11-21}-GaN on {10-11}-sapphire, too, is also encompassed here by the proposal.