公开(公告)号：EP3146558A1

公开(公告)日：2017-03-29

申请号：EP15725563.9

申请日：2015-05-20

申请人： Centre National de la Recherche Scientifique (C.N.R.S.)

发明人： DE MIERRY, Philippe ,  TENDILLE, Florian ,  VENNEGUES, Philippe

IPC分类号： H01L21/20

CPC分类号： H01L21/0254 ,  C30B23/04 ,  C30B23/066 ,  C30B25/04 ,  C30B25/186 ,  C30B29/406 ,  C30B29/66 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/32

摘要： The present invention relates to a method for manufacturing a semiconductor material including a semi-polar III-nitride layer, from a semi-polar starting substrate including a plurality of grooves periodically spaced apart. Each groove includes a first inclined flank having a crystallographic orientation C (0001) and a second inclined flank having a different crystallographic orientation. The method includes the phases which involve: forming (2) III-nitride crystals on the first inclined flanks of the grooves, the growth parameters of the III-nitride crystals being suitable for promoting lateral growth of said crystals such as to induce overlap of the adjacent III-nitride crystals, and continuing the growth until coalescence of the III-nitride crystals such as to form a layer of coalesced III-nitride crystals; and forming (3) a two-dimensional III-nitride layer on the layer of coalesced III-nitride crystals.

摘要翻译： 本发明涉及包含半极性III族氮化物层的半导体材料的制造方法，该半导体材料包括周期性间隔开的多个槽的半极性起始衬底。 每个凹槽包括具有晶体取向C（0001）的第一倾斜侧面和具有不同结晶取向的第二倾斜侧面。 该方法包括以下阶段，其涉及：在槽的第一倾斜侧面上形成（2）III族氮化物晶体，III族氮化物晶体的生长参数适于促进所述晶体的横向生长，例如引起 相邻的III族氮化物晶体，并且继续生长直到III族氮化物晶体的聚结，以形成一层聚结的III族氮化物晶体; 以及在聚结的III族氮化物晶体层上形成（3）二维III族氮化物层。

公开(公告)号：EP2316989A3

公开(公告)日：2014-12-03

申请号：EP11154076.1

申请日：2003-04-15

申请人： The Regents of the University of California

发明人： Craven, Michael D ,  Keller, Stacia ,  Denbaars, Steven P ,  Margalith, Tal ,  Speck, James S ,  Nakamura, Shuji ,  Mishra, Umesh K

IPC分类号： C30B25/02 ,  H01L21/00 ,  H01L21/20 ,  H01L33/00 ,  H01L21/02 ,  C30B25/04 ,  C30B25/10 ,  C30B29/40 ,  C30B29/60 ,  C30B25/18

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (1120) a-plane GaN layers are grown on an r-plane (1102) sapphire substrate using MOCVD. These non-polar (1120) a-plane GaN layers comprise templates for producing non-polar (A1,B,In,Ga)N quantum well and heterostructure materials and devices.

摘要翻译： 具有平面表面的非极性（1120）a面氮化镓（GaN）膜在（1102）r面蓝宝石衬底下通过在高温生长之前使用低温成核层作为缓冲层而生长， 极性（1120）a面GaN薄膜

公开(公告)号：EP2701183A4

公开(公告)日：2014-07-30

申请号：EP12821910

申请日：2012-08-03

申请人： PANASONIC CORP

发明人： CHOE SONGBAEK ,  YOKOGAWA TOSHIYA ,  INOUE AKIRA ,  YAMADA ATSUSHI

IPC分类号： H01L33/00 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32

CPC分类号： H01L33/18 ,  C30B25/04 ,  C30B25/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L21/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L33/20 ,  H01L33/32 ,  H01L33/58 ,  H01L2224/14 ,  H01L2224/16225

公开(公告)号：EP1495168B1

公开(公告)日：2014-06-11

申请号：EP03726251.6

申请日：2003-04-15

申请人： The Regents of The University of California

发明人： CRAVEN, Michael, D. ,  SPECK, James, S.

IPC分类号： C30B25/02 ,  C30B25/04 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40 ,  C30B25/10 ,  C30B29/60

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Non-polar (1120) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (1120) a-plane GaN thin films

公开(公告)号：EP1768192A3

公开(公告)日：2012-10-31

申请号：EP06019703.5

申请日：2006-09-20

申请人： Sony Corporation

发明人： Ohmae, Akira ,  Shiomi, Michinori ,  Futagawa, Noriyuki ,  Ami, Takaaki ,  Miyajima, Takao ,  Hiramatsu, Yuuji ,  Hatada, Izuho ,  Okano, Nobukata ,  Tomiya, Shigetaka ,  Yanashima, Katsunori ,  Hino, Tomonori ,  Narui, Hironobu

IPC分类号： H01L33/00 ,  C30B29/40

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode (LED), which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate until making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管（LED）的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中所述突出部分由与所述基板的类型不同的材料制成 以及在所述衬底的每个凹部上生长第一氮化物基III-V族化合物半导体层，直到形成三角形，其中所述凹部的底表面成为所述三角形的基底; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：EP2316989A2

公开(公告)日：2011-05-04

申请号：EP11154076.1

申请日：2003-04-15

申请人： The Regents of The University of California

发明人： Craven, Michael D ,  Keller, Stacia ,  Denbaars, Steven P ,  Margalith, Tal ,  Speck, James S ,  Nakamura, Shuji ,  Mishra, Umesh K

IPC分类号： C30B25/02 ,  H01L21/00 ,  H01L21/20 ,  H01L33/00

CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (1120) a-plane GaN layers are grown on an r-plane (1102) sapphire substrate using MOCVD. These non-polar (1120) a-plane GaN layers comprise templates for producing non-polar (A1,B,In,Ga)N quantum well and heterostructure materials and devices.

摘要翻译： 一种形成非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的方法。 使用MOCVD在非平面（1120）蓝宝石衬底上生长非极性（1120）a面GaN层。 这些非极性（1120）a面GaN层包括用于产生非极性（Al，B，In，Ga）N量子阱和异质结构材料和器件的模板。

公开(公告)号：EP2159299A2

公开(公告)日：2010-03-03

申请号：EP09161245.7

申请日：2009-05-27

申请人： Samsung Mobile Display Co., Ltd.

发明人： Sung, Dong-Young ,  Kim, Hong-Ryul

IPC分类号： C23C14/04

CPC分类号： H01L51/0011 ,  B05B12/20 ,  C23C14/042 ,  C23C16/042 ,  C23C18/1605 ,  C30B25/04 ,  H01L51/5012

摘要： A mask for thin film deposition used in forming an organic thin film or a conductive layer in an organic light emitting device is disclosed. In one embodiment, the mask includes i) a base member, ii) a plurality of slits configured to penetrate through the base member, wherein the plurality of slits have a predetermined length and extend in a first direction, wherein the plurality of slits comprise an outermost slit positioned in an outermost in a second direction having a predetermined angle with respect to the first direction, and wherein the outermost slit comprises two sub-slits separated from each other and iii) a rib supporting part formed between and contacting the two sub-slits, wherein the rib supporting part extends from a rib which is adjacent to the outermost slit.

公开(公告)号：EP2104754A1

公开(公告)日：2009-09-30

申请号：EP08702115.0

申请日：2008-01-17

申请人： Nanogan Limited

发明人： WANG, Wang Nang

IPC分类号： C30B25/00 ,  C30B25/02 ,  C30B25/04 ,  C30B25/18 ,  C30B29/40 ,  C30B29/48 ,  C30B29/36 ,  C30B29/16 ,  C30B29/60

CPC分类号： C30B25/00 ,  C30B25/02 ,  C30B25/04 ,  C30B25/18 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/48 ,  C30B29/60 ,  H01L33/007 ,  H01L33/0079

摘要： A method of producing single-crystal semiconductor material comprises: providing a template material; creating a mask on top of the template material; using the mask to form a plurality of nanostructures in the template material; and growing the single-crystal semiconductor material onto the nanostructures.

公开(公告)号：EP1820887A3

公开(公告)日：2009-05-20

申请号：EP06023148.7

申请日：2006-11-07

申请人： Sumitomo Electric Industries, Ltd.

发明人： Sato, Fumitaka ,  Nakahata, Seiji

IPC分类号： C30B29/40 ,  C30B25/04

CPC分类号： C30B29/40 ,  C30B25/04

摘要： A low-distortion gallium nitride crystal substrate including low dislocation single crystal regions (Z) having a definite c-axis and a definite a-axis, C-plane growth regions (Y) having a c-axis and a-axis parallel to the c-axis and a-axis of the low dislocation single crystal regions (Z), voluminous defect accumulating regions (H) having a c-axis inverse to the c-axis of the low dislocation single crystal regions (Z) and an a-axis parallel with the a-axis of the low dislocation single crystal regions (Z), and 0.1/cm 2 to 10/cm 2 c-axis gross core regions (F) containing at least one crystal having a c-axis parallel to the c-axis of the low dislocation single crystal regions (Z) and an a-axis different from the a-axis of the low dislocation single crystal regions (Z).

公开(公告)号：EP1625612A2

公开(公告)日：2006-02-15

申请号：EP04733606.0

申请日：2004-05-18

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  FAURIE, Jean-Pierre ,  GIBART, Pierre

IPC分类号： H01L21/20

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B25/04 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

摘要： Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which most of the threading dislocations are bent at 90°. In a second step, growth conditions are changed to increase the lateral growth rate and produce a flat (0001) surface. At this stage the density of dislocations on the surface is