公开(公告)号：EP3260582B1

公开(公告)日：2024-07-17

申请号：EP16752558.3

申请日：2016-02-18

IPC分类号： C30B29/36 ,  C30B23/02

CPC分类号： C30B29/36 ,  C30B23/025

公开(公告)号：EP3315639B1

公开(公告)日：2024-05-01

申请号：EP17194202.2

申请日：2014-08-07

IPC分类号： C30B29/40 ,  C30B25/20 ,  C30B25/18 ,  C30B7/10 ,  C30B23/02

CPC分类号： C30B23/025 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  C30B7/105

公开(公告)号：EP3228733A4

公开(公告)日：2017-11-22

申请号：EP15865728

申请日：2015-12-04

申请人： NIPPON STEEL & SUMITOMO METAL CORP

发明人： SATO SHINYA ,  FUJIMOTO TATSUO ,  KATSUNO MASAKAZU ,  TSUGE HIROSHI ,  NAKABAYASHI MASASHI

IPC分类号： C30B29/36 ,  C30B23/02

CPC分类号： C30B23/025 ,  C01B32/963 ,  C23C14/0635 ,  C23C14/243 ,  C30B29/36

摘要： The present invention provides a method for producing an SiC single crystal, enabling obtaining an SiC single crystal substrate in which a screw dislocation-reduced region is ensured in a wide range, and an SiC single crystal substrate. The SiC single crystal substrate is produced using a seed crystal having an off angle in the off orientation from a {0001} plane by a production method wherein in advance of a growth main step of performing crystal growth to form a facet {0001} plane in the crystal peripheral part on the crystal end face having grown thereon the bulk silicon carbide single crystal and obtain more than 50% of the thickness of the obtained SiC single crystal, a growth sub-step of growing the crystal at a higher nitrogen concentration than in the growth main step and at a growth atmosphere pressure of 3.9 to 39.9 kPa and a seed crystal temperature of 2,100°C to less than 2,300°C is included.

公开(公告)号：EP3031958B1

公开(公告)日：2017-11-01

申请号：EP14834101.9

申请日：2014-08-07

申请人： Mitsubishi Chemical Corporation

发明人： NAGAO, Satoru ,  TSUKADA, Yusuke ,  KAMADA, Kazunori ,  KUBO, Shuichi ,  IKEDA, Hirotaka ,  FUJITO, Kenji ,  FUJISAWA, Hideo ,  MIKAWA,Yutaka ,  MOCHIZUKI, Tae

IPC分类号： C30B29/40 ,  C30B25/20 ,  C30B25/18 ,  C30B7/10 ,  C30B23/02

CPC分类号： H01L29/2003 ,  C30B7/105 ,  C30B23/025 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254

公开(公告)号：EP3028994A4

公开(公告)日：2017-03-29

申请号：EP13890859

申请日：2013-11-27

申请人： TAIHEIYO CEMENT CORP ,  NAT INST ADVANCED IND SCIENCE & TECH

发明人： MASUDA KENTA ,  ICHITSUBO KOUKI ,  SUZUKI MASAKAZU ,  NONAKA KIYOSHI ,  KATO TOMOHISA ,  TANAKA HIDEAKI

IPC分类号： C01B32/956 ,  C30B23/00 ,  C30B23/02 ,  C30B29/36

CPC分类号： C30B23/025 ,  C01B32/956 ,  C01P2004/50 ,  C01P2004/60 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/12 ,  C30B23/00 ,  C30B29/36

摘要： Provided is a silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables an improvement in productivity of a silicon carbide single crystal by virtue of exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm 2 /g to 1, 000 cm 2 /g and has a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol% or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder (5) accommodated in a crucible (1) is heated to be sublimated, a silicon carbide single crystal (6) is formed on a seed crystal (4) provided on an undersurface of a lid (3).

摘要翻译： 本发明提供一种碳化硅粉末，其在升华重结晶法中作为原料使用时，能够通过显示高升华速度提高碳化硅单晶的生产率，并允许少量的碳化硅保留而无需 升华，能够增大碳化硅单晶（例如单晶晶片）的尺寸。 碳化硅粉末的Blaine比表面积为250cm 2 / g至1,000cm 2 / g，并且具有粒度大于0.70mm和3.00mm以下的碳化硅粉末的比例为50 相对于碳化硅粉末的总量为vol％以上。 当容纳在坩埚（1）中的碳化硅粉末（5）被加热以升华时，在设置在盖子（3）的下表面上的晶种（4）上形成碳化硅单晶（6）。

公开(公告)号：EP3031958A1

公开(公告)日：2016-06-15

申请号：EP14834101.9

申请日：2014-08-07

申请人： Mitsubishi Chemical Corporation

发明人： NAGAO, Satoru ,  TSUKADA, Yusuke ,  KAMADA, Kazunori ,  KUBO, Shuichi ,  IKEDA, Hirotaka ,  FUJITO, Kenji ,  FUJISAWA, Hideo ,  MIKAWA,Yutaka ,  MOCHIZUKI, Tae

IPC分类号： C30B29/38 ,  C30B25/20 ,  H01L21/205

CPC分类号： H01L29/2003 ,  C30B7/105 ,  C30B23/025 ,  C30B25/186 ,  C30B25/20 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0254

摘要： An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0 × 10 -5 Å or less is observed.

摘要翻译： 一个目的是提供具有改进的尺寸和晶体质量的非极性或半极性GaN衬底。 自立GaN衬底具有主表面的法线与0度以上且20度以下的m轴之间的角度，其中：当主表面的主表面在c轴方向上的投影图像的尺寸 垂直投影在M平面上为10mm或更多; 在主面与A面的交线上测定a轴的长度的情况下，截面长度为6mm以上且a轴的长度偏差在10.0×的范围内的低畸变部 观察到10-5或更小。

公开(公告)号：EP2412849B1

公开(公告)日：2016-03-23

申请号：EP10755675.5

申请日：2010-03-25

申请人： SUMCO Corporation

发明人： ONO, Toshiaki ,  ITO, Wataru ,  FUJISE, Jun

IPC分类号： C30B33/02 ,  C30B29/06 ,  H01L21/20 ,  H01L21/26 ,  H01L21/322

CPC分类号： C30B33/02 ,  C30B23/025 ,  C30B25/186 ,  C30B29/06 ,  H01L21/3225 ,  H01L21/67115 ,  H01L21/68735 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  Y10S438/918

公开(公告)号：EP2754737A4

公开(公告)日：2015-07-29

申请号：EP12829861

申请日：2012-03-09

申请人： JAPAN SCIENCE & TECH AGENCY

发明人： SUSAKI TOMOFUMI ,  HOSONO HIDEO ,  FUJIHASHI TADAHIRO ,  TODA YOSHITAKE

IPC分类号： C30B29/16 ,  B01D53/02 ,  B01D53/04 ,  B01J20/04 ,  B01J21/10 ,  C01B32/50 ,  C23C14/08 ,  C23C14/28 ,  C30B23/06

CPC分类号： C30B23/066 ,  B01D53/02 ,  B01D2253/1124 ,  B01D2253/25 ,  B01D2257/504 ,  B01J20/041 ,  B01J20/3204 ,  B01J20/3236 ,  C30B23/025 ,  C30B29/16 ,  Y02C10/08

摘要： A method for depositing a magnesium oxide thin film on a substrate by a laser abrasion method using a sintered body or single crystal of magnesium oxide as a target. In this method, a flat processed film made of magnesium oxide having a (111) plane as its front surface is prepared, using a substrate made of strontium titanate having a (111) plane as its principal surface or yttria-stabilized zirconia having a (111) plane as its principal surface, by directly depositing a film on the principal surface of the substrate and epitaxially growing the film.

摘要翻译： 通过使用氧化镁的烧结体或单晶作为靶的激光磨损法在基板上沉积氧化镁薄膜的方法。 在该方法中，使用具有（111）面作为其主表面的钛酸锶基体或氧化钇稳定的氧化锆由（111）面作为其前表面的氧化镁制成的平面加工膜，其具有（ 111）面作为其主表面，通过在衬底的主表面上直接沉积膜并外延生长膜。

公开(公告)号：EP2754736A4

公开(公告)日：2015-06-24

申请号：EP12829563

申请日：2012-08-02

申请人： TAMURA SEISAKUSHO KK

发明人： SASAKI KOHEI

IPC分类号： H01L21/363 ,  C30B23/02 ,  C30B29/16 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66 ,  H01L29/778 ,  H01L29/812 ,  H01L29/872

CPC分类号： H01L21/02609 ,  C30B23/025 ,  C30B25/186 ,  C30B25/20 ,  C30B29/16 ,  C30B29/22 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02579 ,  H01L21/02631 ,  H01L21/02636 ,  H01L21/02661 ,  H01L29/045 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7787 ,  H01L29/812 ,  H01L29/872

公开(公告)号：EP2870278A1

公开(公告)日：2015-05-13

申请号：EP13744670.4

申请日：2013-07-02

申请人： SAINT-GOBAIN RECHERCHE ,  Centre National de la Recherche Scientifique

发明人： SONDERGARD, Elin ,  COHIN, Yann ,  HARMAND, Jean-Christophe

IPC分类号： C30B29/40 ,  C30B29/60 ,  C30B23/02 ,  H01L29/06 ,  B82Y10/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  C30B1/023 ,  C30B23/025 ,  C30B29/06 ,  C30B29/08 ,  C30B29/40 ,  C30B29/605 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/02538 ,  H01L21/02546 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02645 ,  H01L21/02653 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/16 ,  H01L29/66439

摘要： The present invention concerns a substrate comprising a continuous or discontinuous layer of silicon and/or germanium consisting of one or a plurality of monocrystalline grains, and on said layer, one or a plurality of nanowires of which the longitudinal axis is oriented perpendicular to the surface of the substrate. The invention also concerns a method for producing such a substrate.