公开(公告)号：EP2484815B1

公开(公告)日：2014-12-24

申请号：EP10820359.7

申请日：2010-09-15

申请人： Fuji Electric Co., Ltd.

发明人： RYO, Mina ,  YONEZAWA, Yoshiyuki ,  SUZUKI, Takeshi

IPC分类号： C30B29/36 ,  C30B19/04 ,  C30B17/00 ,  C30B9/10

CPC分类号： C30B29/36 ,  C30B9/10 ,  C30B17/00

摘要： An object of the present invention is to obtain stable growth of SiC single crystals, particularly 4H-SiC single crystals with an effective crystal growth rate for a prolonged time even at a low temperature range of 2000°C or lower. A raw material containing Si, Ti and Ni is charged into a crucible 1 made of graphite and heat-melted to obtain a solvent. At the same time, C is dissolved out from the crucible 1 into the solvent to obtain a melt 6. A SiC seed crystal substrate 8 is then brought into contact with the melt 6 such that SiC is supersaturated in the melt 6 in the vicinity of the surface of the SiC seed crystal substrate 8, thereby allowing growth and production of an SiC single crystal on the SiC seed crystal substrate 8.