摘要:
The invention provides a solid-state imaging device comprising a first semiconductor substrate provided with an IT-CCD, and a translucent member connected to the first semiconductor substrate in order to have a gap opposite to a light receiving region of the IT-CCD. A second semiconductor substrate having a peripheral circuit formed thereon is provided on a surface opposed to a surface of the first semiconductor substrate on which the IT-CCD is to be formed, and the peripheral circuit is connected to the IT-CCD via a through hole provided on the first semiconductor substrate.
摘要:
An actinic radiation curable adhesive is provided that includes 50 to 99 wt % of a bifunctional and/or a polyfunctional oxetane compound, 0 to 40 wt % of a monofunctional oxetane compound, 1 to 50 wt % of an epoxy compound having a cyclic structure, and a catalytic amount of a photoinitiator. The adhesive has an initial viscosity of 10 to 1,000 mPa·s and a viscosity at gel point of 1 × 10 1 to 9 × 10 6 Pa.s. There is also provided a process for bonding an adherend A and a different adherend B, the process including forming an adhesive layer by coating a surface of the adherend A with the above adhesive at a thickness of 0.05 to 50 µm, irradiating the adhesive layer with actinic radiation, and bonding the adherend B to the adhesive layer after 0.01 to 4 times the time required for gelling of the adhesive layer has passed following the start of irradiation with actinic radiation.
摘要:
An actinic radiation curable adhesive is provided that includes 50 to 99 wt % of a bifunctional and/or a polyfunctional oxetane compound, 0 to 40 wt % of a monofunctional oxetane compound, 1 to 50 wt % of an epoxy compound having a cyclic structure, and a catalytic amount of a photoinitiator. The adhesive has an initial viscosity of 10 to 1,000 mPa·s and a viscosity at gel point of 1 × 10 1 to 9 × 10 6 Pa.s. There is also provided a process for bonding an adherend A and a different adherend B, the process including forming an adhesive layer by coating a surface of the adherend A with the above adhesive at a thickness of 0.05 to 50 µm, irradiating the adhesive layer with actinic radiation, and bonding the adherend B to the adhesive layer after 0.01 to 4 times the time required for gelling of the adhesive layer has passed following the start of irradiation with actinic radiation.
摘要:
It is an object to provide solid-state imaging device, which can easily be manufactured and has a high reliability, and a method of manufacturing the solid-state imaging device. In the present invention, a manufacturing method comprises the steps of forming a plurality of IT-CCDs on a surface of a semiconductor substrate, bonding a translucent member to the surface of the semiconductor substrate in order to have a gap opposite to each light receiving region of the IT-CCD, and isolating a bonded member obtained at the bonding step for each of the IT-CCDs.
摘要:
There are provided a semiconductor substrate 101 on which solid-state imaging devices are formed, and a translucent member 201 provided onto a surface of the semiconductor substrate such that spaces are provided to oppose to light receiving areas of the solid-state imaging devices, wherein external connecting terminals are arranged on an opposing surface of the semiconductor substrate 101 to a solid-state imaging device forming surface, and the external connecting terminals are connected to the solid-state imaging devices via through-holes provided in the semiconductor substrate 101.
摘要:
There are provided a semiconductor substrate 101 on which solid-state imaging devices are formed, and a translucent member 201 provided onto a surface of the semiconductor substrate such that spaces are provided to oppose to light receiving areas of the solid-state imaging devices, wherein external connecting terminals are arranged on an opposing surface of the semiconductor substrate 101 to a solid-state imaging device forming surface, and the external connecting terminals are connected to the solid-state imaging devices via through-holes provided in the semiconductor substrate 101.
摘要:
The invention provides a solid-state imaging device comprising a semiconductor substrate provided with an IT-CCD and a translucent member connected to the semiconductor substrate in order to have a gap opposite to a light receiving region of the IT-CCD. A connecting terminal is provided on a surface of the translucent member which is opposed to an attached surface of the semiconductor substrate, and the connecting terminal is electrically connected to the semiconductor substrate via a through hole provided in the translucent member.
摘要:
The invention provides a solid-state imaging device comprising a semiconductor substrate provided with an IT-CCD and a translucent member connected to the semiconductor substrate in order to have a gap opposite to a light receiving region of the IT-CCD. A connecting terminal is provided on a surface of the translucent member which is opposed to an attached surface of the semiconductor substrate, and the connecting terminal is electrically connected to the semiconductor substrate via a through hole provided in the translucent member.
摘要:
The invention provides a solid-state imaging device comprising a semiconductor substrate provided with an IT-CCD, and a translucent member connected to the semiconductor substrate in order to have a gap opposite to a light receiving region of the IT-CCD. The translucent member constitutes an optical member having a condensing function.
摘要:
The invention provides a solid-state imaging device comprising a semiconductor substrate provided with an IT-CCD, and a translucent member connected to the semiconductor substrate in order to have a gap opposite to a light receiving region of the IT-CCD. The translucent member constitutes an optical member having a condensing function.