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    SEMICONDUCTOR LASER MODULE
    1.
    发明公开
    SEMICONDUCTOR LASER MODULE 审中-公开
    半导体激光模块

    公开(公告)号：EP2413439A1

    公开(公告)日：2012-02-01

    申请号：EP10755950.2

    申请日：2010-03-17

    申请人： Furukawa Electric Co., Ltd.

    发明人： KIMOTO, Tatsuya ,  KIYOTA, Kazuaki

    IPC分类号： H01S5/02 ,  G02B6/122 ,  H01S5/022 ,  H01S5/50

    CPC分类号： G02B6/2808 ,  G02B6/4206 ,  G02B6/4215 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/0683 ,  H01S5/4012 ,  H01S5/4025 ,  H01S5/4062 ,  H01S5/4087

    摘要： A semiconductor laser module includes a semiconductor device in which at least a semiconductor laser and a bending waveguide are integrated, a beam splitter, and a plurality of detectors. The laser light emitted from the semiconductor laser propagates through the bending waveguide, the laser light emitted through the bending waveguide is input to the beam splitter, a part of the laser light input to the beam splitter is branched by the beam splitter, and the part of the laser light branched is detected by the detectors arranged at different positions in the cross section of a light flux of the part of the laser light. In this semiconductor laser module, a waveform shaping unit configured to make a relation between an output of the semiconductor laser and detection values of the detectors approach a linear relation is provided on an optical path. With this configuration, a wavelength locking control can be stably performed with a high degree of accuracy.

    摘要翻译： 本发明提供一种半导体激光模块，该半导体激光模块具备至少将半导体激光器和弯曲波导一体化的半导体装置，分束器以及多个检测器。 从半导体激光器发射的激光通过弯曲波导传播，通过弯曲波导发射的激光被输入到分束器，输入到分束器的激光的一部分被分束器分支，并且部分 通过配置在激光的一部分的光束的截面中的不同位置的检测器检测分支的激光。 在该半导体激光模块中，在光路上设置波形整形部，该波形整形部使半导体激光器的输出与检测器的检测值之间的关系成为线性关系。 利用该配置，可以高度精确地稳定地执行波长锁定控制。

    INTEGRATED-TYPE SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER MODULE, AND OPTICAL TRANSMISSION SYSTEM
    4.
    发明公开
    INTEGRATED-TYPE SEMICONDUCTOR LASER ELEMENT, SEMICONDUCTOR LASER MODULE, AND OPTICAL TRANSMISSION SYSTEM 审中-公开
    高分子化合物，高分子化合物

    公开(公告)号：EP2461434A1

    公开(公告)日：2012-06-06

    申请号：EP10804227.6

    申请日：2010-07-05

    申请人： Furukawa Electric Co., Ltd.

    发明人： KIMOTO, Tatsuya ,  MUKAIHARA, Toshikazu

    IPC分类号： H01S5/026 ,  G02B6/122 ,  H01S5/22

    CPC分类号： G02B6/12004 ,  G02B6/29344 ,  G02B6/4215 ,  G02B6/4245 ,  G02B2006/12121 ,  G02B2006/12147 ,  G02B2006/12195 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/4068 ,  H01S5/4087

    摘要： An integrated semiconductor laser element includes: an optical coupler that can couple output light from a plurality of semiconductor lasers that oscillate at different oscillation wavelengths from one another, each of the semiconductor laser oscillating in a single mode; and a semiconductor optical amplifier that amplifies output light from the optical coupler. At least one of active layers of the semiconductor lasers and an active layer of the semiconductor optical amplifier have a same thickness and a same composition that is set to have a gain peak wavelength near a center of a wavelength band formed by the oscillation wavelengths of the semiconductor lasers. The semiconductor optical amplifier includes an equal width portion formed on a side of the optical coupler to guide the output light in a single mode and an expanded width portion formed on a light output side with a width wider than a width of the equal width portion. In order to substantially match the gain peak wavelength in the operating state and the gain peak wavelength of the semiconductor laser obtained by setting the composition, the width of the expanded width portion is set according to a total thickness of well layers of the active layer such that a total volume of the well layers of the active layer is increased to a level that suppresses a band filling phenomenon.

    摘要翻译： 集成半导体激光器元件包括：光耦合器，其能耦合来自在不同振荡波长处相互振荡的多个半导体激光器的输出光，每个半导体激光器以单一模式振荡; 以及放大来自光耦合器的输出光的半导体光放大器。 半导体激光器的有源层和半导体光放大器的有源层中的至少一个具有相同的厚度和相同的组成，其被设置为具有由波长的波长的波长带形成的波长带的中心附近的增益峰值波长 半导体激光器 半导体光放大器包括形成在光耦合器的一侧上的相等宽度部分，以引导单个模式的输出光和形成在光输出侧的宽度比宽宽度宽的宽度部分的扩展宽度部分。 为了使操作状态下的增益峰值波长和通过设定该组成而获得的半导体激光器的增益峰值波长基本匹配，扩大宽度部分的宽度根据活性层的阱层的总厚度设定为 有源层的阱层的总体积增加到抑制带填充现象的程度。