公开(公告)号：EP1680817A1

公开(公告)日：2006-07-19

申请号：EP04796085.1

申请日：2004-10-22

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  CAO, Xian-An ,  ZHANG, Anping ,  LEBOEUF, Steven, Francis ,  HONG, Huicong ,  PARK, Dong-Sil ,  NARANG, Kristi, Jean

IPC分类号： H01L33/00 ,  C30B29/40

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106'). Said growing includes applying a temporally varying thermal gradient (100, 100', 102, 102') between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106'), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

公开(公告)号：EP1680817B1

公开(公告)日：2012-08-01

申请号：EP04796085.1

申请日：2004-10-22

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  CAO, Xian-An ,  ZHANG, Anping ,  LEBOEUF, Steven, Francis ,  HONG, Huicong ,  PARK, Dong-Sil ,  NARANG, Kristi, Jean

IPC分类号： C30B29/40 ,  C30B9/00 ,  H01L33/00 ,  H01L33/10

CPC分类号： H01L33/105 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L33/007 ,  Y10T117/1064

摘要： In a method for producing a resonant cavity light emitting device, a seed gallium nitride crystal (14) and a source material (30) are arranged in a nitrogen-containing superheated fluid (44) disposed in a sealed container (10) disposed in a multiple-zone furnace (50). Gallium nitride material is grown on the seed gallium nitride crystal (14) to produce a single-crystal gallium nitride substrate (106, 106'). Said growing includes applying a temporally varying thermal gradient (100, 100', 102, 102') between the seed gallium nitride crystal (14) and the source material (30) to produce an increasing growth rate during at least a portion of the growing. A stack of group III-nitride layers (112) is deposited on the single-crystal gallium nitride substrate (106, 106'), including a first mirror sub-stack (116) and an active region (120) adapted for fabrication into one or more resonant cavity light emitting devices (108, 150, 160, 170, 180).

公开(公告)号：EP1579486A1

公开(公告)日：2005-09-28

申请号：EP03800171.5

申请日：2003-12-22

申请人： GENERAL ELECTRIC COMPANY

发明人： D'EVELYN, Mark, Philip ,  PARK, Dong-Sil ,  LEBOEUF, Steven, Francis ,  ROWLAND, Larry, Burton ,  NARANG, Kristi, Jean ,  HONG, Huicong ,  SANDVIK, Peter, Micah

IPC分类号： H01L21/20 ,  H01L21/02 ,  C30B25/20 ,  C30B29/40 ,  C30B9/12

CPC分类号： H01L33/32 ,  C30B7/105 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/2003 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/732 ,  H01L29/7371 ,  H01L29/7787

摘要： A device which includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 104 per cm2, substantially no tilt boundaries, and an oxygen impurity level of less than 1019 cm-3. The electronic device may be in the form of lighting applications such as light emitting diode (LED) and laser diode (LD) applications and devices such as GaN based transistors, rectifiers, thyristors, and cascode switches, and the like. Also provided is a method of forming a single crystal substrate comprised of gallium nitride having a dislocation density less than about 104 per cm2, substantially no tilt boundaries, and an oxygen impurity level of less than 1019 cm-3, and homoepitaxially forming at least one semiconductor layer on the substrate and an. electronic device.