公开(公告)号：EP4243080A2

公开(公告)日：2023-09-13

申请号：EP23185430.8

申请日：2013-11-18

申请人： General Electric Company

发明人： ARTHUR, Stephen Daley ,  MATOCHA, Kevin Sean ,  RAO, Ramakrishna ,  LOSEE, Peter, Almern ,  BOLOTNIKOV, Alexander Viktorovich

IPC分类号： H01L29/16

摘要： An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located within the first well region. The gate oxide includes an outer section and an interior section having different thickness dimensions. The outer section is disposed over the first well region and the second well region of the semiconductor body. The interior section is disposed over a junction gate field effect transistor region of the semiconductor body. The semiconductor body is configured to form a conductive channel through the second well region and the junction gate field effect transistor region when a gate signal is applied to a gate contact disposed on the gate oxide.

公开(公告)号：EP4243080A3

公开(公告)日：2023-11-08

申请号：EP23185430.8

申请日：2013-11-18

申请人： General Electric Company

发明人： ARTHUR, Stephen Daley ,  MATOCHA, Kevin Sean ,  RAO, Ramakrishna ,  LOSEE, Peter, Almern ,  BOLOTNIKOV, Alexander Viktorovich

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L21/336 ,  H01L29/66 ,  H03K17/687 ,  H01L29/16

摘要： An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located within the first well region. The gate oxide includes an outer section and an interior section having different thickness dimensions. The outer section is disposed over the first well region and the second well region of the semiconductor body. The interior section is disposed over a junction gate field effect transistor region of the semiconductor body. The semiconductor body is configured to form a conductive channel through the second well region and the junction gate field effect transistor region when a gate signal is applied to a gate contact disposed on the gate oxide.

公开(公告)号：EP2932531A1

公开(公告)日：2015-10-21

申请号：EP13798512.3

申请日：2013-11-18

申请人： General Electric Company

发明人： ARTHUR, Stephen, Daley ,  MATOCHA, Kevin, Sean ,  RAO, Ramakrishna ,  LOSEE, Peter, Almern ,  BOLOTNIKOV, Alexander, Viktorovich

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L21/336 ,  H01L29/16

CPC分类号： H01L29/7802 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66712 ,  H03K17/687

摘要： An insulating gate field effect transistor (IGFET) device includes a semiconductor body and a gate oxide. The semiconductor body includes a first well region doped with a first type of dopant and a second well region that is doped with an oppositely charged second type of dopant and is located within the first well region. The gate oxide includes an outer section and an interior section having different thickness dimensions. The outer section is disposed over the first well region and the second well region of the semiconductor body. The interior section is disposed over a junction gate field effect transistor region of the semiconductor body. The semiconductor body is configured to form a conductive channel through the second well region and the junction gate field effect transistor region when a gate signal is applied to a gate contact disposed on the gate oxide.

公开(公告)号：EP1478983A1

公开(公告)日：2004-11-24

申请号：EP03713619.9

申请日：2003-02-25

申请人： GENERAL ELECTRIC COMPANY

发明人： PAPALLO, Thomas F. ,  PURKAYASTHA, Indra ,  ANDARAWIS, Emad, Andarawis ,  BERKCAN, Ertugrul ,  EVANS, Scott Charles ,  GORE, Rahul,"Omkar" Plot No 10,Teacher's Colony ,  JIANG, Mingxiao ,  Mani, Shobhana ,  MORRILL, Daniel, Lawrence ,  ORLOWsKI, Jr., Eugene, Joseph ,  PEARLMAN. Marc, Robert ,  PREMERLANI, William, James ,  RAO, Ramakrishna ,  RAO, Samantha ,  SCHNORE, Austars, Raymond, Jr. ,  SEALING, Charles, Scott ,  SEXTON, Daniel, White ,  BASAVARAJ, Somashekhar ,  TOPKA, Terry, Michael

IPC分类号： G05B11/01

摘要： A method and apparatus for monitoring a communication network is provided. The network includes a plurality of node electronics units communicatively coupled to at least one central control processing unit through at least one network wherein each network includes a network switch. The method includes coupling a monitoring domain to the network, and receiving at least one of network traffic transmitted on at least one of the monitored links, and network traffic received on at least one of the monitored links through at least one monitoring link. The apparatus includes a plurality of node electronics units communicatively coupled to at least one central control processing unit through at least one network wherein each network includes a network switch, and wherein the apparatus comprises a monitoring domain.

摘要翻译： 提供了一种用于监视通信网络的方法和装置。 网络包括通过至少一个网络通信地耦合到至少一个中央控制处理单元的多个节点电子单元，其中每个网络包括网络交换机。 该方法包括将监控域耦合到网络，以及通过至少一个监控链路接收在所监视的链路中的至少一个上传输的网络流量中的至少一个以及在至少一个被监控链路上接收的网络流量。 该设备包括通过至少一个网络通信地耦合到至少一个中央控制处理单元的多个节点电子单元，其中每个网络包括网络交换机，并且其中该设备包括监控域。