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公开(公告)号：EP1717842A4
公开(公告)日：2008-06-18
申请号：EP05719154
申请日：2005-02-16
发明人： KYUSHIMA HIROYUKI , SHIMOI HIDEKI , KAGEYAMA AKIHIRO , INOUE KEISUKE , ITO MASUO
摘要： A photomultiplier having a fine structure for realizing high multiplication efficiency. The photomultiplier comprises an enclosure the inside of which is maintained in a vacuum state. In the enclosure, a photoelectric surface for emitting photoelectrons in response to the incident light, an electron multiplying section for cascade-multiplying photoelectrons emitted from the photoelectric surface, and an anode for extracting secondary electrons produced by the electron multiplying section are provided. Especially a groove section for cascade-multiplying the photoelectrons from the photoelectric surface is formed in the electron multiplying section. On the surfaces of a pair of wall portions (311) defining the groove section, one or more projecting portions (311a) having secondary electron emitting surface are provided.
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公开(公告)号：EP1152448A4
公开(公告)日：2006-04-19
申请号：EP99901128
申请日：1999-01-21
IPC分类号： H01J31/26 , H01J31/49 , H01J29/44 , H01L27/148
CPC分类号： H01J31/26 , H01J31/49 , H01J2231/50073
摘要： An electron tube (10) is mainly composed of a side tube (12), an input plate (14) having a photocathode (18), a stem (16), and a CCD device (20). The inside of the electron tube (10) is in a high vacuum state. The CCD device (20) is secured to the stem (16), with the back (B) of the CCD device (20) opposed to the photocathode (18). In the CCD device (20), on a semiconductor substrate (64) made of a semiconductor of one conductivity type are formed a buried layer (66), a barrier layer (68), an SiO2 layer (70), a storage electrode layer (72), a transfer electrode layer (74), and a barrier electrode layer (76) in respective predetermined positions. On them, a PSG film (78) is formed over the entire surface (A) to palanarize the surface of the CCD device (20). Further, on the film (78), an SiN film (106) mainly made of SiN is formed over the entire surface (A).
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公开(公告)号：EP1717843A4
公开(公告)日：2008-12-17
申请号：EP05710248
申请日：2005-02-16
发明人： KYUSHIMA HIROYUKI , SHIMOI HIDEKI , KAGEYAMA AKIHIRO , INOUE KEISUKE , ITO MASUO
摘要： A photomultiplier having a structure for easily realizing high detection accuracy and microfabrication and its manufacturing method are disclosed. The photomultiplier (1a) comprises an enclosure (2, 3, 4) the inside of which is maintained in a vacuum state. In the enclosure (2, 3, 4), a photoelectric surface (22) for emitting electrons in response to the incident light, an electron multiplying section (31) for cascade-multiplying electrons emitted from the photoelectric surface (22), and an anode (32) for extracting secondary electrons produced by the electron multiplying section (31) are provided. A part of the enclosure (2, 3, 4) is composed of glass substrates (20, 40) each having a flat portion. On the flat portions of the glass substrates (20, 40), the electron multiplying section (31) and the anode (32) are two-dimensionally arranged, respectively.
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公开(公告)号：EP1154457A4
公开(公告)日：2003-01-22
申请号：EP99900652
申请日：1999-01-21
CPC分类号： H01J31/26 , H01J29/92 , H01J31/49 , H01J2229/922 , H01J2231/50068
摘要： In an electron tube (1), a space (S) between the periphery (15b) of a semiconductor device (15) and a stem (11) is filled with an insulating resin (20). Therefore, the insulating resin (20) functions as a reinforcing member even during the assembly of the electron tube (1) under high-temperature condition, thereby preventing a bump (16) from coming off a bump connection part (19). Since the space (S) is only partly closed by the resin (20), the space between the semiconductor device (15) and the stem (11) is ensured a ventilability. That is, no air reservoir is formed between an electron incidence part (15a) at the center of the semiconductor device (15) and the surface (C) of the stem (11), whereby air expanding at high temperature does not damage the electron incidence part (15a) of the back-incidence semiconductor device (15).
摘要翻译： 在电子管（1）中，用绝缘树脂（20）填充半导体器件（15）的周边（15b）和芯柱（11）之间的空间（S）。 因此，即使在高温条件下组装电子管（1）期间，绝缘树脂（20）也用作加强件，从而防止凸起（16）从凸起连接部分（19）脱落。 由于空间（S）仅被树脂（20）部分地封闭，所以半导体器件（15）与芯柱（11）之间的空间确保了通风性。 也就是说，在半导体器件（15）的中心处的电子入射部分（15a）和杆（11）的表面（C）之间不形成储气器，由此在高温下膨胀的空气不会损坏电子 背入射半导体器件（15）的入射部分（15a）。
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