摘要:
A wafer level hermetically packaged integrated circuit has a protective cover wafer bonded to a semiconductor device substrate wafer. The cover wafer seals integrated circuits and other devices including air bridge structures, resonant beams, surface acoustic wave (SAW) devices, trimmable resistors, and micromachines. Some devices, such as SAWs, are formed on the surface of cavities formed in the protective cover wafer. Die are separated to complete the process.
摘要:
Conductive elements may be incorporated in the devices at the integrated circuit level. An elongated conductor is formed over the dielectric layer and is encased in dielectric material. Then, portions of the substrate or the dielectric layer, or both, are removed to expose the encased elongated conductor to air. The method contemplates using sacrificial materials located between the encased conductor in the substrate. Removing the sacrificial material forms an air bridge cavity. The methods of the invention also include removing portions of the substrate in order to form the air bridge cavity. In a bonded substrate structure, a device substrate is bonded to a handle substrate, typically with an oxide bonding layer. Trench isolation is a common step used in the formation of devices and bonded substrates. The air bridge of the invention is compatible with the trench forming steps that are typically used in bonded substrates. In one bonded substrate embodiment, trenches are formed down to the oxide bonding layer. The trenches are coated with a dielectric, filled, and planarized. The dielectric layer covers the planarized trenches and elongated conductors are patterned on the dielectric layer over the air bridge trenches. Another dielectric layer covers the patterned conductors in order to encase them in a dielectric. Then the substrate is further patterned and etched to remove material from between the filled air bridge trenches. The final structure provides air bridge conductors encased in a dielectric that is spaced from the bonding oxide layer.
摘要:
A wafer level hermetically packaged integrated circuit has a protective cover wafer bonded to a semiconductor device substrate wafer. The cover wafer seals integrated circuits and other devices including air bridge structures, resonant beams, surface acoustic wave (SAW) devices, trimmable resistors, and micromachines. Some devices, such as SAWs, are formed on the surface of cavities formed in the protective cover wafer. Die are separated to complete the process.
摘要:
A recoding method of two or more bit groups to reduce the number of partial products and their hardware implementation. Unique complementing scheme, pre-addition of complementing carriers and derivation of sign extensions also reduce hardware implementation as well as allowing the multiplier to handle any combination of input and output formats. The principles are also applied to multiplier/accumulators and complex multipliers.
摘要:
A recoding method of two or more bit groups to reduce the number of partial products and their hardware implementation. Unique complementing scheme, pre-addition of complementing carriers and derivation of sign extensions also reduce hardware implementation as well as allowing the multiplier to handle any combination of input and output formats. The principles are also applied to multiplier/accumulators and complex multipliers.