NONVOLATILE MEMORY CROSS-BAR ARRAY
    1.
    发明公开

    公开(公告)号:EP3234947A4

    公开(公告)日:2017-12-06

    申请号:EP14908534

    申请日:2014-12-15

    IPC分类号: G11C13/00

    摘要: Provided in one example is a nonvolatile memory cross-bar array. The array includes: a number of junctions formed by a number of row lines intersecting a number of column lines; a first set of controls at a first set of the junctions coupling between a first set of the row lines and a first set of the column lines; a second set of controls at a second set of the junctions coupling between a second set of the row lines and a second set of the column lines; and a current collection line to collect currents from the controls of the first set and the second set through their respective column lines and output a result current corresponding to a sum of a first dot product and a second dot product.