公开(公告)号：EP0476296B1

公开(公告)日：1997-01-15

申请号：EP91113498.9

申请日：1991-08-12

申请人： HITACHI, LTD.

发明人： Honma, Hideo ,  Satou, Yukimasa ,  Murakami, Susumu ,  Yatsuo, Tsutomu ,  Sanpei, Isamu ,  Yagishita, Kenji

IPC分类号： H01L29/744 ,  H01L29/739 ,  H01L29/423

CPC分类号： H01L29/42308 ,  H01L29/45 ,  H01L29/744

公开(公告)号：EP0556739A1

公开(公告)日：1993-08-25

申请号：EP93102229.7

申请日：1993-02-12

申请人： HITACHI, LTD.

发明人： Takayanagi, Yuji ,  Murakami, Susumu ,  Satou, Yukimasa ,  Matsuyoshi, Satoshi ,  Mochizuki, Yasuhiro ,  Onose, Hidekatsu

IPC分类号： H01L29/74

CPC分类号： H01L29/744 ,  H01L29/1016

摘要： A gate turn-off thyristor comprising a p-emitter layer (13), an n-base layer (14), a p-base layer (15) and an n-emitter layer (16), wherein the n-base layer (14) comprises a first layer portion (141) adjacent to the p-emitter layer (13), a second layer portion (142) adjacent to the p-base layer (15) and having a lower impurity concentration than the first layer portion (141), and means for changing a travelling path of positive holes injected from the p-emitter layer.

摘要翻译： 一种栅极截止晶闸管，包括p-发射极层（13），n基极层（14），p基极层（15）和n-发射极层（16），其中n基极层（ 14）包括与p-发射极层（13）相邻的第一层部分（141），与p-基底层（15）相邻并且具有比第一层部分更低的杂质浓度的第二层部分（142） 141），以及用于改变从p-发射极层注入的正空穴的行进路径的装置。

公开(公告)号：EP0556739B1

公开(公告)日：1998-07-08

申请号：EP93102229.7

申请日：1993-02-12

申请人： Hitachi, Ltd.

发明人： Takayanagi, Yuji ,  Murakami, Susumu ,  Satou, Yukimasa ,  Matsuyoshi, Satoshi ,  Mochizuki, Yasuhiro ,  Onose, Hidekatsu

IPC分类号： H01L29/74

CPC分类号： H01L29/744 ,  H01L29/1016

公开(公告)号：EP0476296A1

公开(公告)日：1992-03-25

申请号：EP91113498.9

申请日：1991-08-12

申请人： HITACHI, LTD.

发明人： Honma, Hideo ,  Satou, Yukimasa ,  Murakami, Susumu ,  Yatsuo, Tsutomu ,  Sanpei, Isamu ,  Yagishita, Kenji

IPC分类号： H01L29/744 ,  H01L29/739 ,  H01L29/423

CPC分类号： H01L29/42308 ,  H01L29/45 ,  H01L29/744

摘要： In a turn off type semiconductor device, an n-type emitter layer (16) is divided into a plurality of elements (16a) by trenches (17). A silicide layer (3) of a high melting point metal is provided on a p-type layer (15) adjacent to the individual elements (16a) of the n-type emitter layer (16) on a bottom of each of the trenches (17). A gate electrode (4) is provided on the associated silicide layer so as to surround the plurality of elements (16a) of the n-type emitter layer (16) obtained by the division of the emitter layer. An insulator (5) is filled in each of the trenches (17) dividing the n-type emitter layer (16) surrounded by the gate electrode (4). A cathode electrode (6) is provided on both the insulators (5) and the n-type emitter layer (16).

摘要翻译： 在一个关断型半导体器件中，n型发射极层（16）由沟槽（17）划分成元件（16A）的复数。 高熔点金属的硅化物层（3）设置在p型层上（15）相邻的n型发射极层（16）的每个沟槽的底部的各个元件（16A）（ 17）。 的栅电极（4）被设置在相关联的硅化物层上，以围绕由所述发射极层的划分而获得的n型发射极层（16）的元件（16A）的多元性。 绝缘体上（5）沟槽在每个（17）的填充除以栅电极（4）所包围的n型发射极层（16）。 阴极电极（6）被设置在这两个绝缘体（5）和所述n型发射极层（16）。

公开(公告)号：EP0231895A3

公开(公告)日：1988-01-13

申请号：EP87101272

申请日：1987-01-30

申请人： HITACHI, LTD.

发明人： Satou, Yukimasa ,  Yatsuo, Tsutomu ,  Oikawa, Saburo ,  Sanpei, Isamu

IPC分类号： H01L29/10 ,  H01L29/74 ,  H01L29/08

CPC分类号： H01L29/744 ,  H01L29/102 ,  H01L29/7428

摘要： The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode emitter layer. The distance between each pair of adjacent small bores and the thickness of the low-resistance layer are each set so as to be smaller than the carrier diffusion length in an anode base layer. In an on-state, carries flow through the low-resistance layer, thereby allowing the low-resistance layer to become conductive, and thus lowering the on-state voltage. A reduction in the dimension of the small bores lowers the resistance of the low-resistance layer and hence lowers the gate drawing out resistance, so that the interrupting capacity is improved. When gate turn-off thyristor is arranged so as to have an amplifying gate structure, the distance between each pair of adjacent small bores in the amplifying auxiliary thyristor section is set so as to be greater than the carrier diffusion length in the anode base layer. In consequence, the on-state voltage in the auxiliary thyristor section is increased, so that the current selectively flows through the main thyristor section, and the auxiliary thyristor section automatically turns off. Accordingly, when the thyristor is to be turned off, it suffices to turn off the main thyristor section alone.

公开(公告)号：EP0231895A2

公开(公告)日：1987-08-12

申请号：EP87101272.0

申请日：1987-01-30

申请人： HITACHI, LTD.

发明人： Satou, Yukimasa ,  Yatsuo, Tsutomu ,  Oikawa, Saburo ,  Sanpei, Isamu

IPC分类号： H01L29/10 ,  H01L29/74 ,  H01L29/08

CPC分类号： H01L29/744 ,  H01L29/102 ,  H01L29/7428

摘要： The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode emitter layer. The distance between each pair of adjacent small bores and the thickness of the low-resistance layer are each set so as to be smaller than the carrier diffusion length in an anode base layer. In an on-state, carries flow through the low-resistance layer, thereby allowing the low-resistance layer to become conductive, and thus lowering the on-state voltage. A reduction in the dimension of the small bores lowers the resistance of the low-resistance layer and hence lowers the gate drawing out resistance, so that the interrupting capacity is improved. When gate turn-off thyristor is arranged so as to have an amplifying gate structure, the distance between each pair of adjacent small bores in the amplifying auxiliary thyristor section is set so as to be greater than the carrier diffusion length in the anode base layer. In consequence, the on-state voltage in the auxiliary thyristor section is increased, so that the current selectively flows through the main thyristor section, and the auxiliary thyristor section automatically turns off. Accordingly, when the thyristor is to be turned off, it suffices to turn off the main thyristor section alone.