公开(公告)号：EP0132538A1

公开(公告)日：1985-02-13

申请号：EP84106138.5

申请日：1984-05-29

申请人： HITACHI, LTD.

发明人： Sato, Kazuo ,  Yamaguchi, Sumio ,  Kato, Shigeo ,  Matsumura, Yasuhide ,  Mizumoto, Muneo ,  Okuno, Sumio ,  Tamura, Naoyuki

IPC分类号： C30B23/02

CPC分类号： C30B35/005 ,  C30B23/02 ,  Y10S414/137 ,  Y10S414/139

摘要： An apparatus for molecular beam epitaxy according to the present invention is so constructed that a substrate (8) is introduced into a vacuum vessel with a substrate surface for epitaxial growth facing the direction of gravity, and that the substrate is conveyed to and transferred into vacuum chambers (2, 3) for performing processes necessary for the epitaxial growth, with the substrate surface maintained in the direction of gravity and without directly touching the substrate surface.

公开(公告)号：EP0132538B1

公开(公告)日：1987-02-11

申请号：EP84106138.5

申请日：1984-05-29

申请人： HITACHI, LTD.

发明人： Sato, Kazuo ,  Yamaguchi, Sumio ,  Kato, Shigeo ,  Matsumura, Yasuhide ,  Mizumoto, Muneo ,  Okuno, Sumio ,  Tamura, Naoyuki

IPC分类号： C30B23/02

CPC分类号： C30B35/005 ,  C30B23/02 ,  Y10S414/137 ,  Y10S414/139