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公开(公告)号:EP0488620B1
公开(公告)日:1996-06-12
申请号:EP91310822.1
申请日:1991-11-25
申请人: HITACHI, LTD.
IPC分类号: H01L21/00
CPC分类号: H01L21/67778 , Y10S414/137 , Y10S414/139 , Y10S414/14
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公开(公告)号:EP0410706A2
公开(公告)日:1991-01-30
申请号:EP90308116.4
申请日:1990-07-25
申请人: HITACHI, LTD.
IPC分类号: C23C16/50 , H01J37/32 , C23F4/00 , H01L21/205 , H01L21/302
CPC分类号: H01L21/67103 , C23C16/448 , C23C16/509 , C23C16/511 , H01J37/32192 , H01J2237/2001
摘要: In a low-temperature plasma processor, a sample (23) such as semiconductor substrate is processed with a plasma under a cooled state. An electric insulator (12) is interposed between a sample holder (11) and a coolant container (13) for cooling the sample holder, so as to electrically insulate them. In this way, a bias voltage applied to the sample holder and a voltage for generating the plasma can be prevented from leaking, so as to stabilize the process. In addition, the insulator (12) is held in close contact with the sample holder (11) and the cooling container (13) through thermal conductive members (14), whereby the occurrence of non-uniformity during the process of the sample and variation in the qualities of processed samples among sample lots or among processors can be suppressed.
摘要翻译: 在低温等离子体处理器中,在冷却状态下用等离子体处理诸如半导体衬底的样品(23)。 电绝缘体(12)插入在样品保持器(11)和用于冷却样品架的冷却剂容器(13)之间,以使它们电绝缘。 以这种方式,可以防止施加到样品保持器的偏置电压和用于产生等离子体的电压泄漏,从而稳定工艺。 此外,绝缘体(12)通过导热构件(14)保持与样品保持器(11)和冷却容器(13)紧密接触,由此在样品过程中出现不均匀性和变化 在样品批次或处理器之间的处理样品的质量可以被抑制。
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公开(公告)号:EP0121673B1
公开(公告)日:1988-02-10
申请号:EP84101198.4
申请日:1984-02-06
申请人: HITACHI, LTD.
IPC分类号: F04D19/04
CPC分类号: F04D19/048 , F16C2360/45
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公开(公告)号:EP0132538A1
公开(公告)日:1985-02-13
申请号:EP84106138.5
申请日:1984-05-29
申请人: HITACHI, LTD.
发明人: Sato, Kazuo , Yamaguchi, Sumio , Kato, Shigeo , Matsumura, Yasuhide , Mizumoto, Muneo , Okuno, Sumio , Tamura, Naoyuki
IPC分类号: C30B23/02
CPC分类号: C30B35/005 , C30B23/02 , Y10S414/137 , Y10S414/139
摘要: An apparatus for molecular beam epitaxy according to the present invention is so constructed that a substrate (8) is introduced into a vacuum vessel with a substrate surface for epitaxial growth facing the direction of gravity, and that the substrate is conveyed to and transferred into vacuum chambers (2, 3) for performing processes necessary for the epitaxial growth, with the substrate surface maintained in the direction of gravity and without directly touching the substrate surface.
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公开(公告)号:EP0779648A3
公开(公告)日:1997-07-23
申请号:EP97103083.8
申请日:1991-07-01
申请人: HITACHI, LTD.
IPC分类号: H01L21/00
CPC分类号: H01L21/67103 , C23C16/4583 , C23C16/4586 , C30B33/00 , H01L21/6831
摘要: This invention relates to a vacuum processing method and apparatus. When a sample (6) is plasma-processed under a reduced pressure, a sample bed (5,7) is cooled by a cooling medium (10) kept at a predetermined temperature lower than the desired processing temperature. The sample is held on the sample bed. To control the sample temperature, a heat transfer gas is supplied between the back of the sample and the sample installation surface of the sample bed, and the pressure of the heat transfer gas is controlled so as to bring the sample to a predetermined processing temperature. In this way, a sample temperature can be regulated rapidly without increasing the size of the apparatus.
摘要翻译: 本发明涉及一种真空处理方法和设备。 当样品(6)在减压下进行等离子体处理时,样品床(5,7)被保持在低于所需处理温度的预定温度的冷却介质(10)冷却。 样品保持在样品床上。 为了控制样品温度,在样品背面和样品台的样品安装表面之间供应传热气体,并且控制传热气体的压力以使样品达到预定的处理温度。 以这种方式,可以在不增加设备尺寸的情况下快速调节样品温度。
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公开(公告)号:EP0510656A3
公开(公告)日:1993-08-04
申请号:EP92106974.6
申请日:1992-04-23
申请人: HITACHI, LTD.
CPC分类号: C23C14/564 , B01D8/00 , B01J3/006 , Y10S417/901
摘要: There is provided an evacuation system in an ultra-high vacuum sputtering apparatus capable of shortening the pumping time of the system. A main pump (1) composed of a turbo-molecular pump, and a baffle (2) which is positioned upstream of the main pump (1) and cooled to a temperature at which argon gas is not absorbed and only water is absorbed are mounted, and the main pump (1) and a vacuum chamber (12) are separated by a valve (4). A pipeline system for circulating a heating medium to rapidly heat and cool the vacuum chamber (12) is formed for outgassing of the vacuum chamber (12). Since the pumping time can be shortened, the actual working ratio of the system can be increased.
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公开(公告)号:EP0510656A2
公开(公告)日:1992-10-28
申请号:EP92106974.6
申请日:1992-04-23
申请人: HITACHI, LTD.
CPC分类号: C23C14/564 , B01D8/00 , B01J3/006 , Y10S417/901
摘要: There is provided an evacuation system in an ultra-high vacuum sputtering apparatus capable of shortening the pumping time of the system.
A main pump (1) composed of a turbo-molecular pump, and a baffle (2) which is positioned upstream of the main pump (1) and cooled to a temperature at which argon gas is not absorbed and only water is absorbed are mounted, and the main pump (1) and a vacuum chamber (12) are separated by a valve (4). A pipeline system for circulating a heating medium to rapidly heat and cool the vacuum chamber (12) is formed for outgassing of the vacuum chamber (12).
Since the pumping time can be shortened, the actual working ratio of the system can be increased.摘要翻译: 在能够缩短系统的抽吸时间的超高真空溅射装置中设置有排气系统。 主涡轮(1)由涡轮分子泵和位于主泵(1)的上游并被冷却至不吸收氩气并仅吸收水的温度的挡板(2) ,主泵(1)和真空室(12)由阀(4)分开。 形成用于使加热介质循环以快速加热和冷却真空室(12)的管道系统,用于使真空室(12)脱气。 由于可以缩短泵送时间,可以提高系统的实际工作比。
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公开(公告)号:EP0211292B1
公开(公告)日:1992-10-21
申请号:EP86109793.9
申请日:1986-07-16
申请人: HITACHI, LTD.
CPC分类号: H01L21/67766 , C30B23/02 , C30B35/005 , H01L21/67742 , H01L21/67745
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公开(公告)号:EP0410706A3
公开(公告)日:1991-04-17
申请号:EP90308116.4
申请日:1990-07-25
申请人: HITACHI, LTD.
IPC分类号: C23C16/50 , H01J37/32 , C23F4/00 , H01L21/205 , H01L21/302
CPC分类号: H01L21/67103 , C23C16/448 , C23C16/509 , C23C16/511 , H01J37/32192 , H01J2237/2001
摘要: In a low-temperature plasma processor, a sample (23) such as semiconductor substrate is processed with a plasma under a cooled state. An electric insulator (12) is interposed between a sample holder (11) and a coolant container (13) for cooling the sample holder, so as to electrically insulate them. In this way, a bias voltage applied to the sample holder and a voltage for generating the plasma can be prevented from leaking, so as to stabilize the process. In addition, the insulator (12) is held in close contact with the sample holder (11) and the cooling container (13) through thermal conductive members (14), whereby the occurrence of non-uniformity during the process of the sample and variation in the qualities of processed samples among sample lots or among processors can be suppressed.
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公开(公告)号:EP0132538B1
公开(公告)日:1987-02-11
申请号:EP84106138.5
申请日:1984-05-29
申请人: HITACHI, LTD.
发明人: Sato, Kazuo , Yamaguchi, Sumio , Kato, Shigeo , Matsumura, Yasuhide , Mizumoto, Muneo , Okuno, Sumio , Tamura, Naoyuki
IPC分类号: C30B23/02
CPC分类号: C30B35/005 , C30B23/02 , Y10S414/137 , Y10S414/139
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