公开(公告)号：EP0683510A1

公开(公告)日：1995-11-22

申请号：EP95303360.2

申请日：1995-05-19

申请人： HITACHI, LTD.

发明人： Ogawa, Yoshifumi ,  Yasunami, Hisao ,  Tsujimoto, Kasunori ,  Nawata, Makoto ,  Kaji, Tetsunori

IPC分类号： H01L21/3065 ,  C23F1/12

CPC分类号： H01L21/32137

摘要： The present invention enhances silicon etching rate and improves the productivity of a silicon etching apparatus. In a vacuum chamber, plasma etching is performed. Chlorine gas is supplied at a rate of 250 ml/min or above, oxygen gas is added to the chlorine gas at 2.0% by volume or less relative to the chlorine gas. The workpiece is maintained at 0°C or below or the stage mounted with the workpiece is maintained at -10°C or below during etching.

摘要翻译： 本发明提高硅蚀刻速度并提高硅蚀刻装置的生产率。 在真空室中进行等离子体蚀刻。 以250ml / min以上的速度供给氯气，相对于氯气，向氯气中添加2.0体积％以下的氧气。 将工件保持在0℃以下，或者在刻蚀时将工件安装在-10℃以下。