公开(公告)号：EP0554039B1

公开(公告)日：1996-11-20

申请号：EP93300534.0

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

公开(公告)号：EP0725164A3

公开(公告)日：1996-10-09

申请号：EP96106180.1

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有沿微波从微波发生器（1）至等离子体形成区域中的低压工艺腔室中传播的波导（19）。 波导（19）具有大的横截面面积，以使等离子体的大区域来实现。 均匀性和等离子体的稳定性是由一个限流模式（20）抑制的传播模式的所有其否则容易在宽的波导要发生的混合改善。 时尚限制器（20）besteht导电分隔等离子体形成区域之前它们将波导的横截面为一个数组，子引导件的。

公开(公告)号：EP0554039A1

公开(公告)日：1993-08-04

申请号：EP93300534.0

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

摘要翻译： 等离子体处理装置具有沿微波从微波发生器（1）至等离子体形成区域中的低压工艺腔室中传播的波导（19）。 波导（19）具有大的横截面面积，以使等离子体的大区域来实现。 均匀性和等离子体的稳定性是由一个限流模式（20）抑制的传播模式的所有其否则容易在宽的波导要发生的混合改善。 时尚限制器（20）besteht导电分隔等离子体形成区域之前它们将波导的横截面为一个数组，子引导件的。

公开(公告)号：EP0725164A2

公开(公告)日：1996-08-07

申请号：EP96106180.1

申请日：1993-01-26

申请人： HITACHI, LTD.

发明人： Kakehi, Yutaka ,  Kawasaki, Yoshinao ,  Suzuki, Keizo ,  Nojiri, Kazuo ,  Enami, Hiromichi ,  Kaji, Tetsunori ,  Watanabe, Seiichi ,  Ogawa, Yoshifumi

IPC分类号： C23C16/50 ,  H01J37/32

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32266 ,  H01J37/32284

摘要： Plasma processing apparatus has a waveguide (19) along which microwaves are propagated from a microwave generator (1) to a plasma-forming region in a low-pressure processing chamber. The waveguide (19) has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor (20) which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor (20) consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

公开(公告)号：EP0683510A1

公开(公告)日：1995-11-22

申请号：EP95303360.2

申请日：1995-05-19

申请人： HITACHI, LTD.

发明人： Ogawa, Yoshifumi ,  Yasunami, Hisao ,  Tsujimoto, Kasunori ,  Nawata, Makoto ,  Kaji, Tetsunori

IPC分类号： H01L21/3065 ,  C23F1/12

CPC分类号： H01L21/32137

摘要： The present invention enhances silicon etching rate and improves the productivity of a silicon etching apparatus. In a vacuum chamber, plasma etching is performed. Chlorine gas is supplied at a rate of 250 ml/min or above, oxygen gas is added to the chlorine gas at 2.0% by volume or less relative to the chlorine gas. The workpiece is maintained at 0°C or below or the stage mounted with the workpiece is maintained at -10°C or below during etching.

摘要翻译： 本发明提高硅蚀刻速度并提高硅蚀刻装置的生产率。 在真空室中进行等离子体蚀刻。 以250ml / min以上的速度供给氯气，相对于氯气，向氯气中添加2.0体积％以下的氧气。 将工件保持在0℃以下，或者在刻蚀时将工件安装在-10℃以下。

公开(公告)号：EP0644578A3

公开(公告)日：1995-04-19

申请号：EP94113803.4

申请日：1994-09-02

申请人： HITACHI, LTD.

发明人： Tamura, Naoyuki ,  Takahashi, Kazue ,  Ito, Youichi ,  Ogawa, Yoshifumi ,  Shichiba, Hiroyuki ,  Tsubone, Tsunehiko

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： Present invention provides a method of holding substrate and a substrate holding system where the amount of foreign substances on the back surface can be decreased, and a little amount of foreign substances may be transferred from a mounting table to a substrate. The substrate holding system comprises a ring-shaped leakage-proof surface having smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic ttraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

摘要翻译： 本发明提供了一种保持衬底的方法和衬底保持系统，其中可以减少背面上的杂质量，并且少量的异物可以从安装台转移到衬底。 基板保持系统包括：在试样台上具有对应于基板周边的光滑表面的环形防漏表面;在试样台上与基板的对应位置之间的多个接触保持部分 衬底和对应于衬底中心的位置;以及静电吸引装置，用于通过使衬底的背面与环形防漏表面和接触保持部分接触来固定衬底。 衬底在环形防漏表面处与冷却表面接触并且接触保持部分位于环形防漏表面的内侧位置。 基板的背面和冷却面在剩余区域的大部分中不相互接触。

公开(公告)号：EP1119023A3

公开(公告)日：2006-06-07

申请号：EP01107801.1

申请日：1994-09-02

申请人： Hitachi, Ltd.

发明人： Tamura, Naoyuki ,  Takahashi, Kazue ,  Ito, Youichi ,  Ogawa, Yoshifumi ,  Shichida, Hiroyuki ,  Tsubone, Tsunehiko

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： Present invention provides a method of holding substrate and a substrate holding system where the amount of foreign substances on the back surface can be decreased, and a little amount of foreign substances may be transferred from a mounting table to a substrate. The substrate holding system comprises a ring-shaped leakage-proof surface having smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic ttraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

公开(公告)号：EP0644578B1

公开(公告)日：2001-12-05

申请号：EP94113803.4

申请日：1994-09-02

申请人： Hitachi, Ltd.

发明人： Tamura, Naoyuki ,  Takahashi, Kazue ,  Ito, Youichi ,  Ogawa, Yoshifumi ,  Shichiba, Hiroyuki ,  Tsubone, Tsunehiko

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

公开(公告)号：EP1119023A2

公开(公告)日：2001-07-25

申请号：EP01107801.1

申请日：1994-09-02

申请人： Hitachi, Ltd.

发明人： Tamura, Naoyuki ,  Takahashi, Kazue ,  Ito, Youichi ,  Ogawa, Yoshifumi ,  Shichida, Hiroyuki ,  Tsubone, Tsunehiko

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： Present invention provides a method of holding substrate and a substrate holding system where the amount of foreign substances on the back surface can be decreased, and a little amount of foreign substances may be transferred from a mounting table to a substrate. The substrate holding system comprises a ring-shaped leakage-proof surface having smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic ttraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

公开(公告)号：EP0644578A2

公开(公告)日：1995-03-22

申请号：EP94113803.4

申请日：1994-09-02

申请人： HITACHI, LTD.

发明人： Tamura, Naoyuki ,  Takahashi, Kazue ,  Ito, Youichi ,  Ogawa, Yoshifumi ,  Shichiba, Hiroyuki ,  Tsubone, Tsunehiko

IPC分类号： H01L21/00

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： Present invention provides a method of holding substrate and a substrate holding system where the amount of foreign substances on the back surface can be decreased, and a little amount of foreign substances may be transferred from a mounting table to a substrate. The substrate holding system comprises a ring-shaped leakage-proof surface having smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic ttraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

摘要翻译： 本发明提供了一种保持基板和基板保持系统的方法，其中背面上的异物的量可以减少，并且少量的异物可能从安装台传递到基板。 基板保持系统包括在对应于基板的周边的样品台上具有光滑表面的环形防漏表面，多个接触保持部分抵靠在样品台上的基板之间的相应位置 基板和与基板中心对应的位置，以及用于通过使基板的背面接触到环形防漏表面和接触保持部分来固定基板的静电折返装置。 基板在环状防漏面与冷却面接触，接触保持部位置于环状防漏面内。 基板的后表面和冷却表面在剩余区域的大部分中彼此不接触。