公开(公告)号：EP1328000A2

公开(公告)日：2003-07-16

申请号：EP03250113.2

申请日：2003-01-09

申请人： Hewlett-Packard Company

发明人： Birecki, Henryk ,  Binh, Vu Thien

IPC分类号： H01J1/30 ,  G11B9/10

CPC分类号： B82Y10/00 ,  G11B9/10 ,  H01J1/308 ,  H01J1/312

摘要： A field emission planar electron emitter device 100 has an emitter electrode 112, an extractor electrode 120, and a planar emitter emission layer 214, electrically coupled to the emitter electrode 112 and the extractor electrode 120. The planar electron emitter 214 is configured to bias electron emission in a central region of the emission layer in preference to an outer region thereof. This biasing is achieved by fabricating the planar emitter emission layer so that it has an outer perimeter 216a that is thicker in depth than at an interior portion 216b of the planar emitter emission layer, which reduces electron beam emission at the outer perimeter when an electric field is applied between the emitter electrode 112 and the extractor electrode 120. The electric field draws emission electrons from the surface of the planar emitter emission layer 216 towards the extractor electrode 120 at a higher rate at the interior portion than at the outer perimeter. The planar electron emitter device 100 further includes a focusing electrode 124 electrically coupled to the planar electron emitter 216.

摘要翻译： 场发射平面电子发射器件100具有电耦合到发射极电极112和提取器电极120的发射极电极112，提取器电极120和平面发射极发射层214.平面电子发射器214被配置为偏置电子 在发光层的中心区域优先于其外部区域发射。 该偏置是通过制造平面发射器发射层来实现的，使得其具有比在平面发射极发射层的内部部分216b深的深度的外周长216a，这减少了当外界周边的电子束发射时 施加在发射电极112和提取器电极120之间。电场在内部部分比在外周边以更高的速率将发射电子从平面发射器发射层216的表面拉向提取器电极120。 平面电子发射器件100还包括电耦合到平面电子发射器216的聚焦电极124

公开(公告)号：EP1328002A1

公开(公告)日：2003-07-16

申请号：EP03250114.0

申请日：2003-01-09

申请人： Hewlett-Packard Company

发明人： Binh, Vu Thien ,  Lam, Si-ty ,  Kuo, Huei Pei ,  Naberhuis, Steven L. ,  Birecki, Henryk

IPC分类号： H01J1/308 ,  G11B9/10

CPC分类号： B82Y10/00 ,  G11B9/14 ,  G11B9/1409 ,  H01J1/308

摘要： A field emission device 100, includes an emitter electrode 112, an extractor electrode 120, and a solid-state field controlled emitter that utilizes a Schottky metal-semiconductor junction or barrier (114, 116), which is formed on the emitter electrode 112 and electrically couples with the extractor electrode 120 such that when an electric potential is placed between the emitter electrode 112 and the extractor electrode 120, a field emission of electrons is generated from an exposed surface of the semiconductor layer 116. Schottky metal 114 may be selected from conducting layers such as platinum, gold, silver, or a conductive semiconductor layer that is able to provide a high electron pool at the barrier. The semiconductor layer 116 placed on the Schottky metal is very weakly conductive of n-type and has a wide band gap in order to create conditions conducive to creating induced negative electron affinity at applied fields necessary to provide electron emission. One type of wide band-gap material can be selected from titanium dioxide or titanium nitride.

摘要翻译： 场致发射器件100包括发射电极112，提取器电极120和利用形成在发射极112上的肖特基金属 - 半导体结或势垒（114,116）的固态场控制的发射极，以及 与提取器电极120电耦合，使得当在发射电极112和提取器电极120之间放置电位时，从半导体层116的暴露表面产生电子的场发射。肖特基金属114可以选自 可以在屏障上提供高电子池的导电层，例如铂，金，银或导电半导体层。 放置在肖特基金属上的半导体层116是n型非常弱的导电性并且具有宽的带隙，以便产生有助于在所提供的电子发射所必需的施加场产生诱导的负电子亲和力的条件。 一种类型的宽带隙材料可以选自二氧化钛或氮化钛。