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    SURFACE EMISSION TYPE ELECTRON SOURCE AND DRAWING DEVICE
    2.
    发明公开
    SURFACE EMISSION TYPE ELECTRON SOURCE AND DRAWING DEVICE 有权
    兴奋剂化学品 - 兴奋剂

    公开(公告)号：EP2141725A1

    公开(公告)日：2010-01-06

    申请号：EP08740791.2

    申请日：2008-04-23

    申请人： CRESTEC CORPORATION

    发明人： KOJIMA, Akira ,  OHYI, Hideyuki

    IPC分类号： H01J1/312 ,  H01J3/14 ,  H01J37/305 ,  H01L21/027 ,  H01J37/073

    CPC分类号： H01J37/073 ,  B82Y10/00 ,  B82Y40/00 ,  H01J1/312 ,  H01J37/06 ,  H01J37/3174 ,  H01J2201/312 ,  H01J2237/0635

    摘要： A surface emission type electron source according to the present invention includes a first electrode having a planar form; a second electrode having a planar form facing the first electrode; an electron passage layer disposed between the first electrode and the second electrode; and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. The quantum wires are made of silicon, and each of the quantum wires has plural thin parts having small thicknesses formed at predetermined intervals along the first direction.

    摘要翻译： 根据本发明的表面发射型电子源包括具有平面形式的第一电极; 具有面向所述第一电极的平面形状的第二电极; 设置在第一电极和第二电极之间的电子通过层; 以及电源部，被配置为向所述第二电极和所述第一电极施加电压。 电子通过层包括从第一电极延伸到第二电极的第一方向上的多个量子线。 量子线以预定间隔彼此隔开，电子从第二电极的前表面发射。 量子线由硅制成，并且每个量子线具有沿着第一方向以预定间隔形成的具有小厚度的多个薄部。

    QUANTUM DEVICE
    3.
    发明公开
    QUANTUM DEVICE 审中-公开
    量子器件

    公开(公告)号：EP1484800A4

    公开(公告)日：2008-10-29

    申请号：EP03744009

    申请日：2003-03-07

    申请人： MATSUSHITA ELECTRIC WORKS LTD ,  KOSHIDA NOBUYOSHI

    发明人： KOMODA TAKUYA ,  KOSHIDA NOBUYOSHI ,  ICHIHARA TSUTOMU

    IPC分类号： B82B1/00 ,  C09K11/59 ,  H01J1/312 ,  H01J9/02 ,  H01L29/06 ,  H01L29/66 ,  H01L33/00

    CPC分类号： B82Y20/00 ,  B82Y10/00 ,  C09K11/59 ,  H01J1/312 ,  H01J9/022

    摘要： Disclosed is an electron source 10 including an electron source element 10a formed on the side of one surface of an insulative substrate 1. The electron source element 10a includes a lower electrode 2, a composite nanocrystal layer 6 and a surface electrode 7. The composite nanocrystal layer 6 includes a plurality of polycrystalline silicon grains 51, a thin silicon oxide film 52 formed over the surface of each of the grains 51, a number of nanocrystalline silicons 63 residing between the adjacent grains 51, and a silicon oxide film 64 formed over the surface of each of the nanocrystalline silicons 63. The silicon oxide film 64 is an insulating film having a thickness less than the crystal grain size of the nanocrystalline silicon 63. The surface electrode 7 is formed of a carbon thin film 7a laminated on the composite nanocrystal layer 6 while being in contact therewith, and a metal thin film 7b laminated on the carbon thin film 7a.

    ELECTRON EMITTING DEVICE AND ELECTRON EMITTING METHOD
    8.
    发明公开
    ELECTRON EMITTING DEVICE AND ELECTRON EMITTING METHOD 审中-公开
    ELEKTRONENEMISSIONSEINRICHTUNG UND ELEKTRONENEMISSIONSVERFAHREN

    公开(公告)号：EP1708227A1

    公开(公告)日：2006-10-04

    申请号：EP05795165.9

    申请日：2005-10-14

    申请人： NGK INSULATORS, LTD.

    发明人： OHWADA, Iwao, c/o NGK Insulators, Ltd. ,  AKAO, Takayoshi, c/o NGK Insulators, Ltd. ,  GOTO, Naoki, c/o NGK Insulators, Ltd. ,  SUGIYAMA, Tomohiko, c/o NGK Insulators, Ltd.

    IPC分类号： H01J1/312 ,  G09G3/20 ,  G09G3/22 ,  H01J29/04 ,  H01J31/12

    CPC分类号： G09G3/22 ,  B82Y10/00 ,  G09G3/2011 ,  G09G2310/0275 ,  G09G2310/06 ,  G09G2310/065 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2330/02 ,  G09G2330/021 ,  H01J1/30 ,  H01J1/312 ,  H01J1/32 ,  H01J31/127

    摘要： An electron-emitting apparatus includes an electron-emitting element having a lower electrode, an emitter section having a dielectric material, and a plurality of upper electrodes having micro through holes, and a drive voltage applying circuit having a circuit for applying a drive voltage Vin between the lower electrode and the upper electrode. The drive voltage applying circuit applies the drive voltage between the lower electrode and the upper electrode to set an element voltage Vka, which is a potential of the upper electrode relative to a potential of the lower electrode, at a negative voltage for a charge accumulation period Td so as to accumulate electrons in the emitter section, and to set the element voltage Vka at a predetermined positive voltage for an electron emission period Th so as to emit electrons from the emitter section. Further, the drive voltage applying circuit stepwise increases the positive voltage during the electron emission period Th and separately emits the electrons accumulated in the emitter section a plurality of times.

    摘要翻译： 电子发射装置包括具有下电极的电子发射元件，具有电介质材料的发射极部分和具有微通孔的多个上电极，以及驱动电压施加电路，具有用于施加驱动电压Vin 在下电极和上电极之间。 驱动电压施加电路在下部电极和上部电极之间施加驱动电压，将电位相对于下部电极的电位的上部电极的电位的元件电压Vka设定为电荷蓄积期间的负电压 Td，以在发射极部分中积聚电子，并将元件电压Vka设定在电子发射周期Th的预定正电压，以便从发射极部分发射电子。 此外，驱动电压施加电路在电子发射时段Th期间逐步增加正电压，并分别发射累积在发射极部分中的电子数次。

    Electron-emitting device
    9.
    发明公开
    Electron-emitting device 审中-公开
    Elektronen emittierende Vorrichtung

    公开(公告)号：EP1679730A1

    公开(公告)日：2006-07-12

    申请号：EP05257333.4

    申请日：2005-11-29

    申请人： NGK INSULATORS, LTD.

    发明人： Ohwada, Iwao, c/o Legal Affairs and Intellectual ,  Takahashi, Masao, c/o Legal Affairs and Intellec. ,  Akao, Takayoshi, c/o Legal Affairs and Intellec. ,  Ozawa, Shuichi, c/o Legal Affairs and Intellec. ,  Kosaka, Kei, c/o Legal Affairs and Intellectual

    IPC分类号： H01J1/312 ,  H01J1/30 ,  H01J1/304 ,  H01J31/12

    CPC分类号： H01J1/312 ,  B82Y10/00 ,  H01J1/32 ,  H01J31/127

    摘要： An electron-emitting device includes an emitter section composed of a dielectric material, a lower electrode disposed on the lower side of the emitter section, and an upper electrode disposed on the upper side of the emitter section so as to be opposed to the lower electrode with the emitter section therebetween, electrons being emitted from the emitter section through the upper electrode by the application of a drive voltage between the lower electrode and the upper electrode, wherein the upper electrode is provided with a plurality of through-holes which expose the emitter section and which have an average diameter of 10 nm or more and less than 100 nm, and a peripheral portion of each through-hole facing the emitter section is separated at a predetermined distance from the emitter section.

    摘要翻译： 电子发射器件包括由电介质材料构成的发射极部分，设置在发射极部分下侧的下电极和设置在发射极部分上侧的上电极，以与下电极相对 其间具有发射极部分，电子通过在下部电极和上部电极之间施加驱动电压而从发射极部分通过上部电极发射，其中上部电极设置有多个通孔，其暴露发射极 并且平均直径为10nm以上且小于100nm，并且面向发射极部的每个通孔的周边部分在与发射极部分预定距离处分离。