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公开(公告)号：EP1282184A2
公开(公告)日：2003-02-05
申请号：EP02254849.9
申请日：2002-07-10
发明人： Haluzak, Charles C.
IPC分类号： H01M8/02
CPC分类号： H01M8/241 , H01M8/0263 , H01M8/1007 , Y02P70/56 , Y10T29/49114
摘要： An economical and easy to manufacture miniaturized fuel cell (40, 40', 40") having fuel chambers (52, 52a-k) formed from a substrate (62, 62a, 62b), such as a silicon wafer, to define a plurality of elongate fuel chambers (52a-k) in fluid-communication with each other within the substrate (62, 62a, 62b). Elongate electrolytes (42), anodes (50) and cathodes (48) extend along the fuel chambers (52a-k) to maximize the effective electrolyte surface area, thereby increasing the amount of electrical current generated by the fuel cell (40, 40', 40'). The elongate fuel chambers (52, 52a-k) are preferably patterned within the substrate (62, 62a, 62b) in a mirror image configuration such that two thin-film substrates (62a, 62b) my be joined together to define fuel chambers (52, 52a-k) having two elongate electrolytes (42), anodes (50), and cathodes (48) extending therealong. One or more the fuel cells (40, 40', 40") in accordance with the present invention may be stacked within a suitable frame (80) defining alternative layers of fuel and air (or oxygen) chambers, thereby defining a three-dimensional stack of fuel cells having a relatively small profile, but further increasing the current and/or voltage provided.
摘要翻译： 具有由诸如硅晶片的基板（62,62a，62b）形成的具有由硅晶片形成的燃料室（52,52a-k）的经济且易于制造的小型化燃料电池（40,40'，40“），以限定多个 细长的燃料室（52a-k）在衬底（62,62a，62b）内彼此流体连通，细长的电解质（42），阳极（50）和阴极（48）沿着燃料室 k）以最大化有效的电解质表面积，从而增加由燃料电池（40,40'，40'）产生的电流量。细长燃料室（52,52a-k）优选地在衬底内图案化 62，62a，62b），使得两个薄膜基板（62a，62b）接合在一起以限定具有两个细长电解质（42），阳极（50）的燃料室（52,52a-k） ，以及沿其延伸的阴极（48），根据本发明的一个或多个燃料电池（40,40'，40“）可以堆叠在合适的框架内 （80）限定燃料和空气（或氧）室的替代层，从而限定具有相对较小轮廓的燃料电池的三维堆叠，但是进一步增加所提供的电流和/或电压。
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2.发明公开Multi-level integrated circuit for wide-gap substrate bonding 审中-公开用于Substratverklebung的多层集成电路具有大的距离
公开(公告)号：EP1266863A3
公开(公告)日：2004-11-17
申请号：EP02253722.9
申请日：2002-05-28
IPC分类号： B81B7/00
CPC分类号： B81C1/00238 , B81C1/0023 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit (30) includes a substrate (10) having an etched surface and a non-etched surface. The etched surface contains circuit elements (22, 24) and the non-etched surface contains a bonding surface (18). The non-etched surface is located at a predetermined height (12) from the etched surface. Bonding this integrated circuit (30) with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.
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3.发明公开Ink feed trench etch technique for a fully integrated thermal inkjet printhead 有权Tintenzuführkanal-Ätzverfahrenfüreinen vollintegrierten Thermotintenstrahldruckkopf
公开(公告)号：EP1241009A2
公开(公告)日：2002-09-18
申请号：EP02251654.6
申请日：2002-03-08
IPC分类号： B41J2/16
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1635 , B41J2/1639 , Y10T29/49346
摘要： A monolithic inkjet printhead (14) formed using integrated circuit techniques is described. A silicon substrate (20) has formed on its top surface a thin polysilicon layer (44) in the area in which a trench (36) is to be later formed in the substrate. The edges of the polysilicon layer align with the intended placement of ink feed holes (26) leading into ink ejection chambers (30). Thin film layers (46, 48), including a resistive layer (24), are formed on the top surface of the silicon substrate and over the polysilicon layer. An orifice layer (28) is formed on the top surface of the thin film layers to define the nozzles (34) and ink ejection chambers (30). A trench mask is formed on the bottom surface of the substrate. A trench is etched (using, for example, TMAH) through the exposed bottom surface of the substrate and to the polysilicon layer. The etching of the polysilicon layer exposes fast etch planes of the silicon. The TMAH then rapidly etches the silicon substrate along the etch planes, thus aligning the edges of the trench with the polysilicon. A wet etch is then performed using a buffered oxide etch (BOE) solution. The BOE will completely etch through the exposed thin film layers on the topside and underside of the substrate, forming ink feed holes through the thin film layers. The trench is now aligned with the ink feed holes due to the polysilicon layer.
摘要翻译： 描述了使用集成电路技术形成的单片喷墨打印头（14）。 硅衬底（20）在其顶表面上形成在衬底中稍后形成沟槽（36）的区域中的薄多晶硅层（44）。 多晶硅层的边缘与通向墨水喷射室（30）的墨水供给孔（26）的预期位置对准。 包括电阻层（24）的薄膜层（46,48）形成在硅衬底的顶表面上并在多晶硅层上。 在薄膜层的顶表面上形成孔板（28）以限定喷嘴（34）和喷墨室（30）。 在衬底的底表面上形成沟槽掩模。 通过暴露的衬底底表面和多晶硅层蚀刻沟槽（使用例如TMAH）。 多晶硅层的蚀刻暴露了硅的快速蚀刻平面。 然后，TMAH沿着蚀刻平面快速蚀刻硅衬底，从而使沟槽的边缘与多晶硅对准。 然后使用缓冲氧化物蚀刻（BOE）溶液进行湿蚀刻。 京东方将完全蚀刻基板顶面和底面上暴露的薄膜层，形成通过薄膜层的墨水供给孔。 由于多晶硅层，沟槽现在与墨水供给孔对准。
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公开(公告)号：EP1282184A3
公开(公告)日：2005-01-26
申请号：EP02254849.9
申请日：2002-07-10
发明人： Haluzak, Charles C.
CPC分类号： H01M8/241 , H01M8/0263 , H01M8/1007 , Y02P70/56 , Y10T29/49114
摘要： An economical and easy to manufacture miniaturized fuel cell (40, 40', 40") having fuel chambers (52, 52a-k) formed from a substrate (62, 62a, 62b), such as a silicon wafer, to define a plurality of elongate fuel chambers (52a-k) in fluid-communication with each other within the substrate (62, 62a, 62b). Elongate electrolytes (42), anodes (50) and cathodes (48) extend along the fuel chambers (52a-k) to maximize the effective electrolyte surface area, thereby increasing the amount of electrical current generated by the fuel cell (40, 40', 40'). The elongate fuel chambers (52, 52a-k) are preferably patterned within the substrate (62, 62a, 62b) in a mirror image configuration such that two thin-film substrates (62a, 62b) my be joined together to define fuel chambers (52, 52a-k) having two elongate electrolytes (42), anodes (50), and cathodes (48) extending therealong. One or more the fuel cells (40, 40', 40") in accordance with the present invention may be stacked within a suitable frame (80) defining alternative layers of fuel and air (or oxygen) chambers, thereby defining a three-dimensional stack of fuel cells having a relatively small profile, but further increasing the current and/or voltage provided.
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公开(公告)号：EP1333519A3
公开(公告)日：2004-01-14
申请号：EP03250489.6
申请日：2003-01-28
IPC分类号： H01M8/04
CPC分类号： H01M8/04753 , H01M8/04186 , H01M8/04197 , H01M8/04228 , H01M8/2405
摘要： A fuel cell system in accordance with a present invention includes a fuel cell (102) including at least one anode (106) and a fuel supply apparatus (118) that supplies a plurality of fuel droplets (120).
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公开(公告)号：EP1282184B1
公开(公告)日：2008-05-21
申请号：EP02254849.9
申请日：2002-07-10
发明人： Haluzak, Charles C.
CPC分类号： H01M8/241 , H01M8/0263 , H01M8/1007 , Y02P70/56 , Y10T29/49114
摘要： An economical and easy to manufacture miniaturized fuel cell (40, 40', 40") having fuel chambers (52, 52a-k) formed from a substrate (62, 62a, 62b), such as a silicon wafer, to define a plurality of elongate fuel chambers (52a-k) in fluid-communication with each other within the substrate (62, 62a, 62b). Elongate electrolytes (42), anodes (50) and cathodes (48) extend along the fuel chambers (52a-k) to maximize the effective electrolyte surface area, thereby increasing the amount of electrical current generated by the fuel cell (40, 40', 40'). The elongate fuel chambers (52, 52a-k) are preferably patterned within the substrate (62, 62a, 62b) in a mirror image configuration such that two thin-film substrates (62a, 62b) my be joined together to define fuel chambers (52, 52a-k) having two elongate electrolytes (42), anodes (50), and cathodes (48) extending therealong. One or more the fuel cells (40, 40', 40") in accordance with the present invention may be stacked within a suitable frame (80) defining alternative layers of fuel and air (or oxygen) chambers, thereby defining a three-dimensional stack of fuel cells having a relatively small profile, but further increasing the current and/or voltage provided.
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7.发明公开Ink feed trench etch technique for a fully integrated thermal inkjet printhead 有权对于一个完全集成的热喷墨打印头供墨的蚀刻工艺
公开(公告)号：EP1241009A3
公开(公告)日：2003-07-02
申请号：EP02251654.6
申请日：2002-03-08
IPC分类号： B41J2/16
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1635 , B41J2/1639 , Y10T29/49346
摘要： A monolithic inkjet printhead (14) formed using integrated circuit techniques is described. A silicon substrate (20) has formed on its top surface a thin polysilicon layer (44) in the area in which a trench (36) is to be later formed in the substrate. The edges of the polysilicon layer align with the intended placement of ink feed holes (26) leading into ink ejection chambers (30). Thin film layers (46, 48), including a resistive layer (24), are formed on the top surface of the silicon substrate and over the polysilicon layer. An orifice layer (28) is formed on the top surface of the thin film layers to define the nozzles (34) and ink ejection chambers (30). A trench mask is formed on the bottom surface of the substrate. A trench is etched (using, for example, TMAH) through the exposed bottom surface of the substrate and to the polysilicon layer. The etching of the polysilicon layer exposes fast etch planes of the silicon. The TMAH then rapidly etches the silicon substrate along the etch planes, thus aligning the edges of the trench with the polysilicon. A wet etch is then performed using a buffered oxide etch (BOE) solution. The BOE will completely etch through the exposed thin film layers on the topside and underside of the substrate, forming ink feed holes through the thin film layers. The trench is now aligned with the ink feed holes due to the polysilicon layer.
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8.发明公开Multi-level integrated circuit for wide-gap substrate bonding 审中-公开用于Substratverklebung的多层集成电路具有大的距离
公开(公告)号：EP1266863A2
公开(公告)日：2002-12-18
申请号：EP02253722.9
申请日：2002-05-28
IPC分类号： B81B7/00
CPC分类号： B81C1/00238 , B81C1/0023 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit (30) includes a substrate (10) having an etched surface and a non-etched surface. The etched surface contains circuit elements (22, 24) and the non-etched surface contains a bonding surface (18). The non-etched surface is located at a predetermined height (12) from the etched surface. Bonding this integrated circuit (30) with another substrate creates a wide-gap between the substrates that is preferably evacuated and hermetically sealed.
摘要翻译： 集成电路（30）的底物包括：（10）具有蚀刻表面和非蚀刻表面。 蚀刻表面含有的电路元件（22，24）和所述非蚀刻表面包含一个接合表面（18）。 非蚀刻表面位于从蚀刻表面的预定高度（12）。 结合与另一基板该集成电路（30）创建所述衬底之间的宽能隙也优选抽真空并密封。
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9.发明授权Ink feed trench etch technique for a fully integrated thermal inkjet printhead 有权对于一个完全集成的热喷墨打印头供墨的蚀刻工艺
公开(公告)号：EP1241009B1
公开(公告)日：2005-05-25
申请号：EP02251654.6
申请日：2002-03-08
IPC分类号： B41J2/16
CPC分类号： B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1635 , B41J2/1639 , Y10T29/49346
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公开(公告)号：EP1333519A2
公开(公告)日：2003-08-06
申请号：EP03250489.6
申请日：2003-01-28
IPC分类号： H01M8/04
CPC分类号： H01M8/04753 , H01M8/04186 , H01M8/04197 , H01M8/04228 , H01M8/2405
摘要： A fuel cell system in accordance with a present invention includes a fuel cell (102) including at least one anode (106) and a fuel supply apparatus (118) that supplies a plurality of fuel droplets (120).
摘要翻译： 根据本发明的燃料电池系统包括燃料电池（102），其包括提供多个燃料液滴（120）的至少一个阳极（106）和燃料供应装置（118）。
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